Applied Physics · Cross-listed from cs.LG
Radio-Frequency Convolutional Neural Networks
Zhihui Gao, Shi-Yuan Ma, Yiran Chen et al. (+2 more)
Running artificial intelligence (AI) models directly on edge devices such as smartphones, wearables, and drones offers low latency, pervasive scalability, and data
privacy, but these devices rarely carry the computing capability that modern neural networks demand. Edge accelerators have been developed in response, yet each adds computing hardware to devices already constrained in size, weight, power, and cost (SWaP-C). An alternative lies in what these devices already carry: the frequency mixer in every wireless
radio multiplies signals in time, natively performing convolution in the frequency domain. Here we introduce
radio-frequency convolutional neural networks (RF-CNNs), which repurpose existing communication hardware for CNN inference. Multi-channel convolutions are mapped onto frequency tones for a passive mixer to execute in a single pass. We experimentally demonstrate that RF-CNN runs deep CNNs up to 26.4 million parameters and nine layers from classification of wireless signals and images to controllable image generation, close to full-precision performance. Because the weights arrive over the air and the analog hardware is shared with communication, the edge device spends energy only on data preparation and readout-down to 0.72 femtojoules per multiply-accumulate, two orders of magnitude less than it would cost on an added digital processor. These results suggest that deployed wireless infrastructure can bring efficient, state-of-the-art AI inference to the billions of devices it already connects.
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All authors Zhihui Gao, Shi-Yuan Ma, Yiran Chen, Dirk Englund, Tingjun Chen
Applied Physics · Cross-listed from cond-mat.mtrl-sci
Epitaxial inversion of spontaneous polarization in {\epsilon}-Ga2O3
Yan Wang, Zhigao Xie, Weihua Tang et al. (+1 more)
Polar wide bandgap
semiconductors offer the unique capability to manipulate internal electric fields and induce two-dimensional electron gases (2DEG). The emerging orthorhombic {\epsilon}-Ga2O3 is a promising candidate owing to its large spontaneous polarization (Psp). However, exploiting this material is hindered by fundamental ambiguities surrounding its absolute Psp vectors and the inability to govern its epitaxial direction. Here we show the resolution of the absolute Psp vectors in {\epsilon}-Ga2O3 and control of its macroscopic polarity via substrate engineering. By correlating interferometric piezoresponse with atomic configurations, we establish an identification criterion where opposing polarities are assigned through the
geometric elevation within an asymmetric four-atom sequence. Guided by this signature, we demonstrate that epitaxy on Al-polar AlN and sapphire yields uniformly Ga-polar (upward Psp) and O-polar (downward Psp) architectures, respectively, whereas deteriorated crystallinity disrupts this registry and triggers mixed-polarity. This atomic-to-macroscopic correlation eliminates long-standing ambiguities regarding absolute polar orientations in non-centrosymmetric oxides. Analogous to mature III-Nitride architectures, this blueprint provides the foundational platform for designing macroscopic polarization discontinuities at heterointerfaces, unlocking {\epsilon}-Ga2O3 for advanced polarization electronics.
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All authors Yan Wang, Zhigao Xie, Weihua Tang, Chee Keong Tan
Applied Physics · Cross-listed from cond-mat.mtrl-sci
Adaptive Substrate Support Based on Thin-Film Piezoelectric Actuators
Ertuğ Şimşek, Bas Jansen, Marcelo Ackermann et al. (+1 more)
Advanced lithography scanners require extreme substrate flatness in the range of nanometers to prevent focus errors. Such a flatness is challenging to reach and maintain using static substrate supports. Active correction concepts using bulk piezoelectric or linear actuators become prohibitive due to wiring and volume limitations, considering the thousands of pillars required. In this work, we present to our knowledge the first ever demonstration of an active substrate support concept based on thin-film piezoelectric actuators. The working principle, fabrication steps, and characterization of a proof-of-principle device, supported by finite element modeling (FEM), are presented in detail. The fabricated device shows a displacement above 9 nm, which is sufficient to correct some of the focus errors in lithography systems. We foresee that this new concept may open the way towards smaller chip dimensions and improved yield.
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All authors Ertuğ Şimşek, Bas Jansen, Marcelo Ackermann, Muharrem Bayraktar
Applied Physics · Cross-listed from physics.comp-ph
Braided endovascular implants for intracranial aneurysms: mechanics, hemodynamics, and clinical translation
Ratnadeep Pramanik, Duygu Dengiz, Mariya S. Pravdivtseva et al. (+9 more)
Endovascular implants prevent intracranial aneurysm rupture by altering the mechanical and hemodynamic environment at the aneurysm neck. Yet many in silico workflows prescribe or reconstruct the post-deployment geometry before computing flow, leaving unresolved the mechanics that create the clinically relevant interface. Here we review braided intraluminal flow diverters, intrasaccular devices, and emerging flow-disruption concepts across deployment mechanics, inter-wire and wire-wall contact, superelasticity, wall apposition, pore geometry, computational fluid dynamics, and fluid-structure interaction. We connect these modeling choices to neck coverage, malapposition, migration, deformation, and durability, and distinguish established evidence from mechanistic inference and prospective hypotheses. We argue that model fidelity should match the clinical question: prescribed or fast placement may support screening, whereas questions of coverage, apposition, compaction, and migration benefit from mechanically plausible deployment states. An interface-resolved mechanics-to-flow framework, supported by measurable validation targets and standardized reporting, could improve device design and enable more reliable patient-specific treatment planning.
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All authors Ratnadeep Pramanik, Duygu Dengiz, Mariya S. Pravdivtseva, Martin Frank, Ivo Steinbrecher, Prasanth Velvaluri, Matthias Mayr, Philipp Berg, Sylvia Saalfeld, Naomi Larsen, Olav Jansen, Alexander Popp
Applied Physics
A Scaling Framework for Mechanical Memristance: Dimensionless Metrics and Material Design Maps
Abdulla Alhembar, Fabrizio Scarpa, Chrystel D. L. Remillat et al. (+6 more)
Mechanical memristors are systems whose dissipative response depends on the history of previous loading through an evolving internal state. History-dependent forces and dissipation occur in a wide range of materials and devices, including viscoelastic
polymers, shape-
memory materials, piezoelectrics, granular media and field-responsive fluids. Determining which of these responses admits a mechanical-memristor representation requires a constitutive test, as well as a comparison of scales. In this work, a fractional-order mechanical memristor model is developed and cast into a nondimensional form to identify the governing parameters controlling
memory-dependent dissipation. The formulation leads to a set of dimensionless groups that characterise dissipation magnitude,
memory-state scale and
memory transfer. These quantities are combined into an effective mechanical memristance screening index \(\Mh = \beta\gamma |\mathcal H_\alpha(\Omega)|\), which provides a conditional measure of local damping modulation at matched response amplitude, constitutive slope and reference scales. Illustrative parameter scenarios are then constructed for material classes including shape-
memory polymers, shape-
memory alloys, hydrogels, nanocellulose, lignin-rich materials, natural fibres, piezoelectric
polymers, piezoelectric ceramics, electrorheological fluids, magnetorheological fluids and granular dampers. The framework establishes a common basis for comparing
memory-dependent damping within the adopted constitutive description and identifies the calibration required for its application to candidate materials and devices
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All authors Abdulla Alhembar, Fabrizio Scarpa, Chrystel D. L. Remillat, Rodrigo J. da Silva, Ross Anderson, Ludovico Cademartiri, Abderrezak Bezazi, James P. K. Armstrong, Adam W. Perriman
Applied Physics · Cross-listed from physics.optics
Wavelength-Multiplexed Nonlinear Computing with a Single-Layer Diffractive Optical Processor
Yongkang Cheng, Che-Yung Shen, Yuntian Wang et al. (+2 more)
Diffractive optical processors provide a promising platform for high-throughput, low-latency analog computing by exploiting engineered wave propagation to transform optical fields. However, implementing nonlinear mappings in optical hardware remains challenging. Here, we introduce a wavelength-multiplexed encoding-and-decoding (E+D) diffractive processor that exploits multiple illumination wavelengths to enhance the nonlinear function-approximation capability of a compact single-layer diffractive architecture, without cascading multiple diffractive layers or increasing the trainable degrees of freedom. Under sequential wavelength scanning, each wavelength-detector channel implements a distinct nonlinear function at the output of the diffractive processor. Numerical simulations using 100 wavelength channels and 10,000 spatial detector regions at the output of the diffractive processor demonstrate the implementation of one million distinct nonlinear functions through wavelength multiplexing. We also demonstrate a simultaneous multiwavelength illumination configuration in which the E+D diffractive processor performs wavelength-division multiplexing and nonlinear function approximation concurrently. This multiwavelength illumination configuration is experimentally validated by optically implementing 64 distinct nonlinear functions under simultaneous illumination at eight wavelengths from 495 to 635 nm. Through numerical simulations and visible-light experimental demonstrations, our results indicate that this wavelength-multiplexed nonlinear function approximation framework provides a scalable route toward compact, high-capacity diffractive processors for large-scale analog optical computing and optical information processing.
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All authors Yongkang Cheng, Che-Yung Shen, Yuntian Wang, Shiqi Chen, Aydogan Ozcan
Applied Physics · Cross-listed from physics.ao-ph
Tropospheric Ozone Formation Potential and Related Design Considerations for Radiative Coolers
Jyothis Anand, Piero Di Carlo, Eleonora Aruffo et al. (+2 more)
Recently, radiative coolers have been widely explored for reducing cooling loads or lowering temperatures in buildings, and at urban scales as a heat-mitigation measure. However, the potential impacts of radiative cooler deployment on the chemical composition of the atmosphere remain largely unexplored. A defining feature of recently-designed radiative coolers is their high ultraviolet (UV) reflectance, which is required for sub-ambient cooling under strong sunlight. Yet, wide adoption of such UV-reflective radiative coolers could substantially increase the UV actinic flux in the atmosphere above. This, in turn, may affect tropospheric ozone concentrations, particularly in urban atmospheres with high NOx concentrations. Here, as a case study, we use a 0-dimensional photochemical box model, constrained by field measurements of meteorological conditions and chemical concentrations in the urban environment of Houston, Texas, to explore the potential impact of the widespread use of UV-reflective radiative coolers on ozone concentrations. Our calculations show that complete deployment of radiative coolers may increase tropospheric ozone levels by as much as 30% during specific meteorological conditions in Houston. Informed by the wavelength-dependent modelling results, we propose specific designs, namely pigmented radiative coolers with different UV reflectances, and UV-absorptive visible-reemitting fluorescent radiative coolers, that could minimize negative ozone formation while retaining appreciable cooling performance. Our results motivate further study on the effects of widespread deployment of radiative cooling designs like superwhite roof paints on air quality, and materials that simultaneously minimize adverse photochemical impact and maximize cooling performance.
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All authors Jyothis Anand, Piero Di Carlo, Eleonora Aruffo, Paul E. Ohno, Jyotirmoy Mandal
Applied Physics · Cross-listed from cond-mat.mtrl-sci
High-performance orbital-torque magnetic memory on the 300-mm platform
Dinggui Zeng, Yang Gao, Jinyu Duan et al. (+24 more)
Contemporary
memory technologies are increasingly constrained by the fundamental trilemma of storage capacity, access latency, and power consumption. Among the emerging technologies,
spin-orbit torque
magnetic random-access
memory (SOT-MRAM) shows promise to circumvent these challenges, owing to its fast switching dynamics and high endurance. However, the application of SOT-MRAM is hindered by the relatively low write and read efficiencies, resulting in a large bitcell area and an insufficient sensing margin. Meanwhile, the involvement of an ultrathin
spin-source channel, typically within a few nanometers, imposes technological challenges for mass production. Here, we resolve these issues on a 300-mm wafer platform by exploiting the emerging orbital degree of freedom and the resultant orbital torque (OT) from the relatively thick Ti/W bilayer. In particular, OT
memory nanodevices exhibit a giant tunnel magnetoresistance (TMR) of 182%, nanosecond-scale response, 1012 endurance, together with an enhanced switching efficiency (E_b/I_c), which consequently enables an ultra-low write energy of less than 0.1 pJ/bit. Our findings demonstrate that orbital angular momentum can be implemented for building energy-efficient MRAM devices, offering a practical pathway towards low-latency
memory that is demanded for high-performance computing and AI applications.
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All authors Dinggui Zeng, Yang Gao, Jinyu Duan, Lei Zhao, Yuhao An, Xing He, Jintao Ke, Yonglong Ga, Shasha Wang, Zhenghui Ji, Muyuan Chen, Hengan Zhou, Xuejie Xie, Enlong Liu, Junlu Gong, Qijun Guo, Yihui Sun, Zejie Zheng, Weiming He, Xiaolei Yang, Fantao Meng, Yaohua Wang, Hongxin Yang, Delin Zhang, Yong Jiang, Wanjun Jiang, Shikun He
Applied Physics · Cross-listed from quant-ph
Rényi and Tsallis information entropies for a harmonic position-dependent mass
Dorcas A. Addo, Daniel Sabi-Takou, Eugene Adjei et al. (+1 more)
In this paper, we study Renyi and Tsallis information
entropies for a
Hamiltonian system with position-dependent mass confined in harmonic oscillator potential. Gegenbauer
polynomials are used to obtain the position eigenfunction of such a system, and the modified Bessel function of the second kind is used to determine the equivalent momentum eigenfunction. By means of probability densities of both representations, we analytically and numerically evaluate the Heisenberg-like uncertainty of this system. Because the Renyi and Tsallis information
entropies in position representation are described by integral functionals of the Gegenbauer
polynomials, these quantities are much more difficult to calculate. To get around this problem, we evaluate these information
entropies at the system s asymptotical limit, which corresponds to the behavior of an undeformed harmonic oscillator. Nevertheless, no approximation method is used to obtain the Tsallis and Renyi information
entropies in momentum representation. In both representations, we find that these information
entropies approach the Shannon
entropy when the entropic parameter alpha-> 1 and are closed to the results of similar models of the literature. Finally, we evaluate the related entropic uncertainty relations numerically to validate the latter obersevations.
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All authors Dorcas A. Addo, Daniel Sabi-Takou, Eugene Adjei, Latévi M. Lawson