Materials Science
Hidden Defect Chemistry in Ion-Irradiated MoS$_2$ Field-Effect Transistors Revealed by Photocurrent Loss
L. Daniel, D. Sutarma, L. Klieve et al. (+7 more)
Defect engineering in monolayer MoS$_2$ is a promising route to tune field-effect transistors (FETs), but the electronic response of defects in processed devices can be masked by contacts, substrate effects, adsorbates, and chemical passivation. Here, we irradiate MoS$_2$ FETs with low-energy 40~eV Ar$^+$ ions to preferentially create sulfur vacancies (V$_S$) in the channel while minimizing substrate damage. We compare dark and illuminated electrical characterization with surface analysis and first-principles calculations. Dark transfer characteristics show an apparent robustness against irradiation up to moderate fluences, with pronounced degradation only at the highest fluence. Under 532~nm illumination, however, the photocurrent and light-induced photodoping decrease systematically with increasing ion fluence, revealing irradiation-induced changes that are hidden in standard dark measurements. Atomic force microscopy and X-ray photoelectron spectroscopy show substantial carbon-containing residues on processed devices even after extended cleaning. We propose that such residues may provide a reservoir for hydrocarbon-mediated passivation of sulfur vacancies. Density-functional-theory calculations provide a microscopic model consistent with this scenario: unsaturated V$_S$ introduce in-gap states, H-C$_S$ configurations suppress these states, and carbon substitution without hydrogen leaves defect states in the band gap. Our results highlight carbon-containing surface contamination as a key factor in interpreting defect engineering experiments on MoS$_2$ and related TMDC devices.
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All authors L. Daniel, D. Sutarma, L. Klieve, O. Kharsah, U. Hagemann, O. Altenhoff, S. Sleziona, L. Breuer, P. Kratzer, M. Schleberger
Materials Science
Bayesian model comparison of type-I and type-II ultrafast demagnetization dynamics
Hiroki Wadati and Tetsuro Ueno
Ultrafast demagnetization dynamics are often phenomenologically classified into type-I and type-II responses according to their temporal
evolution following femtosecond
laser excitation. However, finite experimental temporal resolution and noise can substantially obscure the intrinsic dynamics and complicate this classification. In this work, we investigate the distinguishability of type-I and type-II demagnetization dynamics using Gaussian-convolved phenomenological models and
Bayesian information criterion-based statistical model comparison. Synthetic
datasets with varying temporal resolution and noise levels are first analyzed to evaluate the conditions under which the two classes can be reliably discriminated. We show that convolution with the instrumental response function significantly reduces the observable differences between the intrinsic responses, thereby producing broad regimes in which model discrimination becomes statistically inconclusive. The applicability of the framework is further demonstrated through analysis of representative experimental ultrafast demagnetization data from NiCo2O4 thin films. These results suggest that the apparent classification of ultrafast demagnetization dynamics can be highly sensitive to experimental resolution, noise level, and analysis methodology.
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Materials Science
Boron-assisted stabilization of low-resistivity mixed-valence Cu-O thin films prepared by reactive magnetron sputtering
Nirmal Kumar, Jemal Yimer Damte, Michal Procházka et al. (+5 more)
This study systematically investigated the influence of boron incorporation in Cu-O thin films and the effect of oxygen partial pressure ($p_{\rm ox}$) on the phase
evolution, chemical bonding, and electrical characteristics of the prepared films. A phase transition from Cu$_2$O to Cu$_2$O/Cu$_4$O$_3$ to CuO was observed as oxygen partial pressure increased. Boron incorporation significantly broadened the stability window of the Cu$_2$O and Cu$_4$O$_3$ phases and delayed the transition to CuO at higher oxygen partial pressure. In the highly B-doped Cu-O films, Cu$_4$O$_3$ was stabilized even under oxygen-rich conditions along with the CuO phase, suggesting that boron significantly altered the oxidation pathway. The formation of B-O and possible B-O-Cu configurations altered the local oxygen chemistry and promoted mixed-valence copper
oxide phases. Electrical measurements revealed that highly B-doped Cu-O films exhibited a delayed transition from a high-resistivity low-$p_{\rm ox}$ regime to a low-resistivity mixed-valence regime, ultimately reaching approximately 0.06 $\Omega$ cm, among the lowest reported resistivities for a CuO-like material. These findings demonstrate that boron doping is an effective approach for tailoring the phase stability, defect chemistry, and electrical characteristics of Cu-O thin films for optoelectronic and photovoltaic applications.
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All authors Nirmal Kumar, Jemal Yimer Damte, Michal Procházka, Radomír Čerstvý, Jiří Houška, Pavel Baroch, Stanislav Haviar, Jiří Rezek
Materials Science · Cross-listed from cond-mat.mes-hall
Rolling Two-Dimensional Collinear Magnets into Chiral Nanotubes with $p$-Wave Magnetism
Zhejunyu Jin, Robin R. Neumann, Rodrigo Jaeschke-Ubiergo et al. (+2 more)
$p$-wave magnets are noncollinear compensated
magnetic systems that exhibit nonrelativistic antisymmetric
spin splitting in momentum space. Their odd-parity
spin symmetry enables unconventional spintronic functionalities, including highly efficient charge-to-
spin conversion via the Edelstein effect. An outstanding question is whether such
magnetic phases can emerge from simple and broadly accessible
magnetic building blocks rather than from intrinsically noncollinear
magnetic orders. Here, we show that rolling two-dimensional collinear magnets – ferromagnets, antiferromagnets, and altermagnets – into nanotubes generates a rich
spin-
symmetry landscape controlled by
curvature, chirality, and
magnetic order. Remarkably,
chiral nanotubes hosting radial or tangential coplanar
spin textures generically realize $p$-wave magnetism irrespective of the underlying collinear parent phase. The emergent odd-parity
spin symmetry manifests itself in both electronic and magnonic spectra through antisymmetric $p$-wave
spin splitting. Our results establish
magnetic nanotubes as a versatile platform for engineering unconventional $p$-wave magnetism and predict a nonrelativistic Edelstein response that exceeds conventional
spin-orbit-driven charge-to-
spin conversion by more than an order of magnitude.
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All authors Zhejunyu Jin, Robin R. Neumann, Rodrigo Jaeschke-Ubiergo, Jairo Sinova, Alexander Mook
Materials Science
Ferroelastic domain wall motion and collective domain switching in RbSCN
V. Soprunyuk, A. Tröster, J. Pils et al. (+4 more)
Low frequency (0.05 - 40 Hz) dynamic elastic measurements and resonant ultrasound spectroscopy measurements (100-600 kHz) of RbSCN have been performed in the temperature region of the order-disorder improper ferroelastic phase transition at T$_c \approx$ 435~K. Quite similar to KSCN, the low frequency data show - in addition to the intrinsic phase transition anomalies - superelastic softening in a- and b-directions, resulting from movements of ferroelastic domain walls under dynamic stress. However, in contrast to KSCN, a sudden discontinuous increase of Young's modulus appears in RbSCN at { T$^{\ast} < T_c $}, which is accompanied by a frequency dependent damping peak. This behaviour is reminiscent of a first order phase transition.\\ Heating RbSCN slightly above T$^{\ast}$, followed by subseqent cooling, removes all {signs of domain wall dynamics}. The results demonstrate, that the anomalies in RbSCN around $T^{\ast}$ result from collective domain switching events that are induced when the {temperature dependent critical pinning stress, $\sigma_c(T)$ falls below the applied external stress $\sigma$, implying that $T^{\ast}(\sigma=\sigma_c)$. This interpretation is supported by calculations of the temperature dependences of twin boundary widths $w$ and energies $F_w$, as well as the Peierls potential $V_0$ using a compressible pseudospin model, which leads to a critical pinning stress, $\sigma_c(T)$ that is in excellent agreement with experimental values of $T^{\ast}(\sigma_c)$. }
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All authors V. Soprunyuk, A. Tröster, J. Pils, W. Schranz, I. Rychetsky, A. Klic, M.A. Carpenter
Materials Science
A parsimonious structure model for the icosahedral quasicrystal Cd5.7Yb
Michael Feuerbacher
A compact structure model for the icosahedral phase Cd5.7Yb is presented. The model is based on a higher-dimensional description and a cut-and-projection procedure to generate the atom distribution in three-dimensional physical space. It strictly employs only spherical or elliptical occupation domains, ensuring a low number of parameters and low calculation cost. In the presented form the model has seven adjustable parameters. Despite its minimalistic setting, the model reproduces available experimental data, such as chemical composition, mass density and electron density distribution, as well as the cluster structure in physical space very well. Nevertheless, the approximation of the occupation domains by spheres and ellipses evidently implies limitations in accuracy and universality. The model can be adapted for the description of other Tsai-type icosahedral phases.
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Materials Science
Phonon-driven Floquet engineering for electronic states
Yu-Chan Tai, Chih-Wei Luo, Noriaki Takagi et al. (+3 more)
Controlling material excitations offers access to novel fundamental and technological properties. The paradigm of Floquet engineering, the manipulation of the electronic structure using a coherent and time-periodic driving source, has attracted significant
attention. While most realizations rely on strong optical fields, coherent
phonons provide an alternative route to realizing Floquet-Bloch states and are expected to enable substantially longer-lived Floquet-Bloch states. We show that
laser-excited coherent
phonons drive Floquet-Bloch states. Using time-resolved multiphoton photoemission combined with
quantum beat spectroscopy on
graphene-covered Ir(111), we track the coherent electronic dynamics of the image-potential states dressed by coherent
phonons. The beat signal indicates the presence of sideband structure with the coherent-
phonon frequency as its fundamental period, consistent with Floquet theory. Furthermore, an independent oscillation in intensity at the same frequency was observed, confirming excitation of the coherent
phonon mode. Compared with conventional light-driven Floquet-Bloch states, the observed
phonon-driven Floquet-Bloch states persist for one to two orders of magnitude longer. These results establish coherent
phonons as a material-driven route to Floquet engineering and demonstrate the long-lived dressing of electronic states beyond the optical excitation window.
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All authors Yu-Chan Tai, Chih-Wei Luo, Noriaki Takagi, Hiroshi Ishida, Chun-Liang Lin, Ryuichi Arafune
Materials Science
Analytical approximations of dispersion laws and ultra-complex conductivity diagrams
A.Ya. Maltsev
We study the probability of the emergence of ultra-complex conductivity diagrams in conductors that satisfy the tight-binding approximation and have the simple or body-centered cubic
lattice. The presence of ultra-complex conductivity diagrams allows us to observe a number of highly nontrivial effects in strong
magnetic fields, however, the probability of their emergence in a given substance is quite low. In the case of the simple or body-centered cubic
lattice, the leading tight-binding approximation does not allow us to estimate this probability due to the peculiarities of the spectra in this situation. To estimate this probability, we use higher-order corrections to the leading approximation, which yield more accurate analytical expressions for the electron spectra.
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Materials Science · Cross-listed from physics.optics
Dynamic Topological Light Control in Reconfigurable Non-Hermitian Metastacks
Ryan Hogan, Zihan Lu, Han Peng et al. (+4 more)
Metasurfaces often require complex lithography for dynamic optical control. To overcome this, we utilize a lithography-free, non-Hermitian planar metastack comprising a distributed Bragg reflector and a vanadium dioxide (VO2) thin film. By virtue of temperature and thermal hysteresis as an active synthetic dimension and exploiting the VO2
insulator-to-metal transition, we actively tune topological interface states to achieve polarization-sensitive spectral control. Notably, our system hosts path-dependent exceptional points (EPs); the intermediate hysteretic states generate a continuum of hot and cold EP pairs that ultimately converge into a single, degenerate EP. Furthermore, we experimentally observe wide-range dynamic optical control, comprising reversible 8% spectral shifts with near-unity reflectance modulation, alongside potential for ultrafast dynamics. Ultimately, our CMOS-compatible design provides a scalable, simple platform for active and topological photonics.
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All authors Ryan Hogan, Zihan Lu, Han Peng, Jie Zhou, Yanling Xiao, Shining Zhu, Hui Liu
Materials Science · Cross-listed from cs.LG
Atompack: A Storage and Distribution Layer for Read-Heavy Atomistic ML Training Datasets
Ali Ramlaoui, Daniel T. Speckhard, Sagar Pal et al. (+3 more)
Atomistic machine learning
datasets are increasingly used for training: large immutable snapshots are read repeatedly, shuffled across epochs, staged across clusters' storage systems, and republished as reusable scientific artifacts. This workload differs from interactive scientific curation, where mutable records and ad hoc inspection are often more important than random indexed throughput. We present Atompack, an append-oriented storage format and distribution layer designed around a simple workload: training pipelines usually consume complete molecular records, while the order of records is randomized by the learning
algorithm. Atompack appends records efficiently during
dataset construction, then commits an immutable index and serves records through a
memory-mapped read path optimized for training. We compare Atompack with HDF5, LMDB, and ASE baselines representing array stores, key-value records, serialized records, and object-oriented databases. The
benchmarks measure sequential reads, shuffled reads, shared-filesystem behavior, write throughput, and artifact size. On a representative 64-atom workload, Atompack is 96x faster than ASE LMDB on shuffled training-style reads while producing artifacts about 79% smaller. The results indicate that serving complete molecule records, rather than field chunks or reconstructed objects, improves shuffled training throughput while keeping artifacts compact enough for public distribution.
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All authors Ali Ramlaoui, Daniel T. Speckhard, Sagar Pal, Fragkiskos D. Malliaros, Alexandre Duval, Victor Schmidt
Materials Science
Consistent transition model for Bi0.5Na0.5TiO3 from temperature-dependent structural and electrical properties
Thomas Fourgassie, Omar Ibder, Cosme Milesi-Brault et al. (+5 more)
BNT based solid solutions are promising parent materials for lead free dielectric capacitors, thanks to their high recoverable energy densities and breakdown strengths. However, the ambient temperature
symmetry and high temperature phase
evolution of BNT remain unclear. Crucially, structural transformations and electrical ordering are most often considered independently, hindering a coherent understanding of the BNT phase transition. In this work, we combine X ray diffraction, transmission electron microscopy, Raman spectroscopy, impedance spectroscopy, and high field polarization cycling to establish a unified picture of the structural and dielectric response of BNT. Based on these results, we propose a consistent transition model for BNT that reconciles previously conflicting interpretations. This integrated structure property study provides a rationale for developing high performance, lead free energy storage materials.
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All authors Thomas Fourgassie, Omar Ibder, Cosme Milesi-Brault, Anna Katharina Ott, Eric Bourhis, Pascal Andreazza, Pierre-Eymeric Janolin, Cécile Autret-Lambert
Materials Science
Field-induced topological Hall effect and butterfly-shaped magnetoresistance in the centrosymmetric antiferromagnet EuAuAs
Yu Zhang, Junfa Lin, Huan Wang et al. (+6 more)
The coupling between
magnetic and electronic degrees of freedom gives rise to a variety of intriguing transport phenomena. Among them, the topological
Hall effect, originating from the real-space Berry phase associated with nontrivial
magnetic textures, has attracted considerable
attention. Here, we systematically investigate the
magnetic and transport properties of antiferromagnet EuAuAs.
Magnetic characterizations reveal
antiferromagnetic transition at 5.7 K and 6.3 K for $H \parallel ab$ and $H \parallel c$, accompanied by metamagnetic transition and small hysteresis for $H \parallel ab$. Electrical transport measurements reveal a pronounced topological
Hall effct in the
antiferromagnetic state with $H \parallel ab$ and $I \parallel c$, which may be attributed to finite scalar
spin chirality. Furthermore, the magnetoresistance exhibits butterfly-shaped hysteresis and strong angular dependence, which are likely associated with
spin-dependent electron scattering,
magnetic-domain
evolution, and domain-wall pinning. Our results suggest that field-induced
spin textures play an important role in the magnetotransport properties and provide insights into the interplay between
magnetic textures and electronic transport in centrosymmetric antiferromagnets.
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All authors Yu Zhang, Junfa Lin, Huan Wang, Kun Han, Yiting Wang, Xue Dong, Zhenfeng Guan, Shengdi Xi, Tian-Long Xia
Materials Science
Ferron Hall effect: Transverse accumulation of polarization driven by thermal gradients in ferroelectrics
Daniel A. Bustamante Lopez, Verena Brehm and Dominik M. Juraschek
The
phonon Hall effect describes the generation of a transverse heat current in response to a longitudinal thermal gradient in a
magnetic field. Here, we theoretically demonstrate that, when the
lattice excitations deflected by the
Hall effect carry electric dipole moments, their transverse motion produces an accumulation of electric polarization in ferroelectric materials. This accumulation is driven by
lattice excitations that carry polarization, known as ferrons, and we therefore call the mechanism the ferron
Hall effect. Using atomistic
lattice dynamics with parameters obtained from density functional theory, we illustrate the effect in the prototypical ferroelectric BaTiO3. Our results identify ferrons as the electric-polarization analogues of
magnons in transverse transport and provide a route toward thermal and
magnetic manipulation of ferroic order.
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Materials Science
The substitutional atomic distance model for predicting lattice thermal conductivity in alloys
Zhicheng Zong, Tianhao Li, Shixian Liu et al. (+2 more)
Understanding
phonon transport in
alloys is crucial for the design of high-performance electronic and thermoelectric devices. However, conventional theoretical models fail to provide a clear physical picture of
phonon scattering caused by atomic disorder in
alloys, and their prediction accuracy is limited. In this work, a new substitutional atomic distance model for
alloys is proposed, providing an intuitive physical picture. SiGe and InGaAs
alloys are taken as representative systems, and their thermal conductivities are calculated, showing good agreement with previous experimental measurements. The results indicate that
alloy scattering plays a dominant role in reducing thermal conductivity. This study provides new insights into
phonon transport in
alloys and offers guidance for tailoring thermal properties through compositional engineering.
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All authors Zhicheng Zong, Tianhao Li, Shixian Liu, Haisheng Fang, Nuo Yang
Materials Science
Atomically Thin Amorphous Carbon with an Ultralow Dielectric Constant
Chee-Tat Toh, Artem K. Grebenko, Ugur Karadeniz et al. (+17 more)
Two-dimensional (2D) materials exhibit excellent properties at monolayer thickness and are viable replacements for various microelectronic components as scaling gradually approaches the atomic limit. Despite significant advancements in the ongoing 2D revolution of integrated
circuits, one crucial building block, namely a 2D ultralow-k (ULK) dielectric, remains unreported. The challenge lies in achieving a dielectric constant less than 3, as traditional low-k dielectrics are inherently unstable at the 2D limit due to their amorphous or porous nature. The realisation of ultrathin dielectrics with low-k is also needed to address current bottlenecks in integrated
circuits scaling. Specifically, low-k materials are necessary to minimise parasitic capacitances as the distance between conductive elements shrinks below 10 nm. Moreover, advanced architectures like gate-all-around field effect transistors (GAA FET) require even lower dielectric constants (k<2) at sub-3nm thickness. Here, we show that layer-by-layer grown multilayer amorphous carbon (ML-AC), as thin as 0.8 nm, is a mechanically robust 2D ULK dielectric with k of 1.35 and dielectric strength of 28-31 MV cm-1. The lack of any long-range order, its intrinsic 2D nature, sp2 carbon character and low density are all essential for minimising dielectric permittivity. Moreover, ML-AC overcomes the vulnerability of existing dielectrics to ion
diffusion degradation with a record metal ion
diffusion time to failure (TTF) of 10^10 s for even a single layer. Therefore, otherwise necessary additional layers occupying up to 3 nm can be eliminated, which is especially significant as metal line widths approach 10 nm. Combined with its low-temperature, direct and conformal growth even on a dielectric, these critical features enable substantial improvements in silicon-based
semiconductor electronics and ensure compatibility with future 2D electronics.
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All authors Chee-Tat Toh, Artem K. Grebenko, Ugur Karadeniz, Usha Bhat, Ya He, Hongji Zhang, Denis V. Vyalikh, Anna Makarova, Alexander Fedorov, Alena A. Alekseeva, Kostya Iakoubovskii, Lu Shi, Andrei Starkov, Chuan Chu Tee, Lucas M. Sassi, Michel Bosman, Naoto Kamiuchi, Yuta Sato, Kazutomo Suenaga, Barbaros Oezyilmaz
Materials Science
Optimizing Expert-Designed Crystal Graph Networks for Band-Gap Prediction with an Autonomous LLM Research Loop
Chenmu Zhang and Boris I. Yakobson
Predicting a material's properties from its structure is a central, fast-advancing problem in computational materials science. A decade of work has produced standard public
benchmarks and many published machine-learning models for the task (Dunn et al., 2020). The task's fixed metric and these baselines make it a natural setting for autonomous
agent research (Karpathy, 2026). On the MatBench band-gap
benchmark ($>$100k
crystals), a general-purpose coding
agent autonomously built the most accurate model trained without external pretraining, ahead of all seventeen expert-designed models reported for the task. A closer analysis shows it reached this by implementing known methods: either already standard in
crystal neural-network models, or borrowed from other areas of machine learning. The contributing implementations include element-pair features on each message-passing edge and a
crystal space-group
embedding. The work not only demonstrates that LLM-
agent autonomous research can optimize an expert-designed machine learning model for material property prediction, but also investigates the limitations of such autonomous research.
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Materials Science · Cross-listed from physics.chem-ph
Thermal Fundamental Gap Predictions in DFT via Optimally Tuned Hybrids
Tim Gould, Leeor Kronik, Gil Amoyal et al. (+1 more)
Predicting electronic fundamental gaps at finite temperature has remained conceptually and practically challenging. We address this in three connected steps. First, we extend generalized Kohn–Sham hybrid density functional theory to thermal ensembles, deriving a Mermin generalized Kohn–Sham framework from a thermal one-particle auxiliary system and an exact density-functional remainder. Second, via an extension of Janak's
theorem that holds rigorously in this framework, we recast Hirata's thermal-quasiparticle picture as a thermal orbital gap
estimator and derive a closed low-temperature form, the error of which is controlled by the derivative discontinuity. Third, because optimal tuning eliminates this error, the auxiliary orbital gap matches the interacting gap at low temperature, upgrading optimal tuning from a ground-state strategy to the governing principle – mandatory, not optional – for accurate finite-temperature gap predictions obtained from gaps of orbital
eigenvalues within a hybrid functional framework. We present applications that validate the theory and demonstrate its consequences.
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All authors Tim Gould, Leeor Kronik, Gil Amoyal, Stefano Pittalis
Materials Science · Cross-listed from cs.CV
MatMMExtract: An Open-Source Pipeline for Panel-Level Extraction of Grounded Image-Text Pairs from Materials Science Literature
Subham Ghosh, Shubham Tiwari, Mohammad Ibrahim et al. (+1 more)
The materials science literature encodes decades of experimental knowledge in figures, yet this visual record remains locked away and inaccessible to AI at scale. The core difficulty is structural: most scientific figures are compound, with a single caption describing multiple sub-panels simultaneously, making direct image-text pairing unreliable. We present MatMMExtract, an end-to-end open-source pipeline that resolves this by decomposing compound figures into individual sub-panels and generating structured, grounded annotations using a large
language model guided by a curated materials science taxonomy. Applied to 14,810 open-access articles, MatMMExtract produces MatSciFig; 391,606 panel-level image-text pairs from 180,571 figures, each annotated with a sub-caption, a two-level visualisation category spanning 19 classes and over 100 subtypes, and a scientific summary. To enable accurate panel localisation, we introduce MaterialScope, a domain-specific detection
dataset of 2,811 manually annotated materials science figures, on which a fine-tuned YOLO12-m detector achieves mAP_50 of 0.9227. Among six benchmarked
language models, Gemini 3.1 Flash Lite delivers the best cost-quality trade-off for annotation generation, with 82% of outputs rated good and a
hallucination rate of 4.8%. A dual-encoder
retrieval baseline on MatSciFig achieves a 4.4 times improvement in R@1 over zero-shot CLIP, demonstrating the
dataset's immediate utility for
vision-
language learning. All resources are released openly to the community.
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All authors Subham Ghosh, Shubham Tiwari, Mohammad Ibrahim, Abhishek Tewari
Materials Science · Cross-listed from cond-mat.mes-hall
Length–Velocity Gauge Equivalence of Quantum Geometric Nonlinear Conductivity in the Adiabatic DC Limit
Shakeel Ahmad and Fei Xue
Nonlinear transport has emerged as a sensitive probe of
quantum geometry beyond the Berry-
curvature physics of linear response. However, the intrinsic second-order dc response remains conceptually subtle: different
quantum and semiclassical formulations can appear to give different static limits, with different assignments of
Fermi sea and
Fermi surface contributions. Here we resolve this ambiguity by developing a gauge-consistent density-
matrix theory of intrinsic nonlinear conductivity in both the length gauge, where the electric field couples through the position operator, and the velocity gauge, where it enters through the vector potential. We show that the two gauges give the same adiabatic dc response when the same retarded continuation is used for all external frequencies and when the velocity gauge current includes all field-dependent vertices. The apparent
Fermi sea terms cancel in the full expression, leaving a
Fermi surface
quantum geometric contribution determined by the band-normalized
quantum metric. This result implies that a fully gapped
insulator has no residual dc nonlinear
Hall current in the adiabatic clean limit. The reactive part of the
Fermi surface term agrees with the original semiclassical Berry-connection-polarizability response, while the dissipative Ohmic sector requires a more careful treatment of relaxation and
impurity scattering. Our work establishes the length-velocity gauge equivalence for
quantum geometric nonlinear response and provides a foundation for using nonlinear transport to probe
magnetic quantum geometry, especially in PT-symmetric antiferromagnets.
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