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Physics Condensed Matter Materials Science

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Friday 18 September

Materials Science

Electrodeposited Co and Ni Hexacyanoferrates: Insights into Structure and Morphology

Prussian blue (PB) and its analogues (PBAs) are interesting materials for electrochemical applications due to their tunable redox chemistry and open framework structure. In this study, hexacyanoferrates (HCF) containing iron (FeHCF), cobalt (CoHCF) and nickel (NiHCF) were synthesized via potentiostatic electrodeposition. Cyclic voltammetry revealed distinct redox behaviors. Morphological characterization (SEM, EDX) demonstrated uniform, pyramidal film growth for FeHCF and CoHCF. Otherwise, NiHCF presented a cracked film with cubic clusters on top due to residual stress. Despite this, homogeneous element distribution was found for all samples. Structural characterization (TEM and XRD) confirmed a cubic lattice crystal structure for all films, with systematic lattice contraction from Fe to Co to Ni due to decreasing atomic radius. Raman and XPS data revealed a shift toward Fe2+ dominant oxidation states and modifications in CN bonding with the influence of K+ and water occupancy in the PBAs framework. These findings illustrate how metal substitution and deposition parameters can tune the structural and electrochemical properties of PBA films, presenting a strategic route to design tailored electrodes.
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All authors Larissa de O. Garcia, Michael Pohlitz, Mohammed F. Kalady, Falk Röder, Axel Lubk, Daniel Wolfmand Christian K. Müller

Materials Science

Complete Neural Electronic Initialization Accelerates Materials DFT

We present the first complete machine learning method for accelerating plane-wave density functional theory (DFT) in materials under the projector augmented wave (PAW) formalism. We formalize seven criteria that a Complete Neural Electronic Initializer must satisfy for practical end-to-end PAW DFT acceleration. Applying these to prior work reveals two structure-dependent components, augmentation occupancies and spin initialization, whose absence prevents existing acceleration methods from providing complete reference-free initialization. We show that omitting these components can eliminate or reverse the acceleration obtained via models that only predict the smooth valence density. We satisfy the missing requirements by introducing AugNet, a general equivariant model for PAW augmentation occupancies, and the first general spin density model for materials, which predicts the smooth spin-difference density and spin-difference PAW augmentation occupancies using predicted magnetic moments to constrain the global magnetic state. Combined with existing valence density models, our full method satisfies all seven criteria and forms a fully reference-free electronic initializer for materials DFT, requiring no electronic quantities from a converged target calculation. We show that perfect initialization could cut PAW DFT wall time by 40-52%, and our method recovers up to 62% of this saving, reducing end-to-end DFT wall time by up to ~25% on unseen structures while preserving converged energies.
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Materials Science

Adsorption of Phosgene Gas on Pristine and Noble Metal-Doped B12N12 Nanocages: Insights from Density Functional Theory

This study examines phosgene (COCl2) adsorption on pristine and noble metal-doped (Ag, Au, Pd, Pt) B12N12 nanocages using dispersion-corrected density functional theory [B3LYP-D3(BJ)]. Boron-site substitution narrows the HOMO-LUMO gap far more than nitrogen-site substitution (69-82% vs 41-67%) and was adopted throughout. All systems were fully optimized; multiple starting geometries converged to two stable minima per dopant, X-O and X-Cl. Pristine B12N12 binds phosgene weakly (Eads = -12.8 to -24.9 kJ mol^-1). Doping strengthens binding, spanning -14.0 to -60.7 kJ mol^-1 after counterpoise correction, with platinum exhibiting the highest affinity and structural stability. Natural population analysis indicates phosgene donates at most 0.33 e, and QTAIM classifies all cage-adsorbate bond critical points as closed-shell or intermediate, confirming physisorption. Vibrational frequency analysis confirms all structures as true minima and reveals that the adsorption entropy penalty (59-161 J mol^-1 K^-1) is decisive. Under Grimme's quasi-harmonic approximation, pristine cages fail to bind phosgene (Delta G = +23.8 to +27.9 kJ mol^-1), whereas only Pt-O (Delta G = -8.8 kJ mol^-1) and Pd-O (-7.2 kJ mol^-1) adsorb phosgene spontaneously at 298 K. Transition-state theory indicates rapid room-temperature recovery (tau = 43 ms for Pt-O), while thermodynamic desorption occurs at 69.6 deg C, ensuring a practical regeneration window. Silver-doped cages provide narrow post-adsorption gaps and high electrophilicity but cannot retain phosgene at ambient conditions. Platinum doping is therefore the most effective strategy for reversible phosgene detection using B12N12 nanocages.
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All authors Shahariar Chowdhury, Mohammad Abdul Matin, Samiran Bhattacharjee, Ishtiaque M. Syed

Materials Science

Material chemical composition impacts on the band alignments: preliminary results on the 3D/2D perovskite interfaces

While hybrid organic-inorganic halide perovskite solar cells have achieved remarkable certified efficiencies, their widespread industrial and societal adoption is hindered by instabilities against light, heat, and moisture. A strategy to mitigate issues, such as moisture sensitivity, involves depositing 2D perovskites on 3D thin films for passivation, but their precise impact on cell performance requires detailed understanding. This work employs atomistic first-principles simulation, based on hybrid functionals, to investigate the structural and electronic properties of 2D/3D interfaces. Specifically, it focuses on interfaces formed by (PEA)2PbI4 (PEA = C6H5CH2CH2NH3, as 2D perovskite) and complex 3D perovskites (Cs0.125MA0.14FA0.735Pb(I0.87Br0.13)3, with MA = CH3NH3 and FA = CH(NH2)2) which are ones of the most used perovskites. The approach is based on optimized hybrid functional methods to consistently determine work function (WF), electron affinity, and band offset (EBO) across different layers. Preliminary results demonstrate that WF are strongly dependent on the cleavage and chemical nature of the surfaces. Furthermore, the creation of interfaces significantly impacts macroscopic potential, with a noticeable slope linked to the polarization of the 3D materials due to ionic substitutions. The band alignment is also highly sensitive to the termination and chemical nature of the perovskites, with valence and conduction EBOs varying from 0.2 to 0.7 eV and of approximately 0.25 eV, respectively. This ongoing work aims to provide a systematic description of these effects, with further investigation into the impact of dimensionality loss on perovskite stability.
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Materials Science · Cross-listed from physics.optics

Programmable Intrinsic Circularly Polarized Emission

Circularly polarized luminescence (CPL) is central to chiral photonics, yet programming circularly polarized emission at the nanoscale remains challenging. Here, we program intrinsic CPL at its microscopic origin in laser-written all-inorganic perovskite nanocrystals embedded in glass. High-resolution transmission electron microscopy reveals a core-shell-like variation in interplanar spacing associated with intrinsic CPL, consistent with torsional lattice distortion. The torsional lattice distortion breaks inversion symmetry, while density functional theory calculations show that it lifts the spin degeneracy of the band-edge electronic states. Power-dependent measurements further reveal a transition from birefringence-mediated circular polarization to intrinsic CPL, accompanied by the emergence of a distinct core-shell-like lattice distortion in the nanocrystals. By tuning the incident linear polarization angle and focal depth, we deterministically control both the handedness and magnitude of the intrinsic CPL, with |glum| of approximately 4 ^ 10^-3. These results show that programmable intrinsic CPL originates from the structural and electronic properties of the emitting nanocrystals, enabling circularly polarized emission to be controlled at its microscopic origin and spatially encoded within a monolithic material.
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All authors Yujie Jiao, Zhenqin Li, Yide Chang, Yongsen He, Xiaoyu Sun, Wei Lyu, Jiayu Ding, Zhaolin Zhong, Puxin Yang, Chi Chen, Bangjie Song, Min Qiu, Yanming Wang, Siying Peng

Materials Science

Validation of an Ab Initio-Informed Electronic Stopping Model for Large-Scale Atomistic Simulations

Accurately modeling nonadiabatic electronic energy dissipation in atomistic simulations of radiation damage remains a key challenge. Existing models often rely on arbitrary thresholds and neglect trajectory-dependent, band-structure, and nonlinear effects. A model developed by Tamm et al. (\href{https://doi.org/10.1103/PhysRevLett.120.185501}{doi:10.1103/PhysRevLett.120.185501}) offers a nonempirical description of electronic dissipation for atomistic simulations, but has not been directly benchmarked in the electronic stopping regime. We present the first such benchmark via the comparison of atomistic simulations with experimental ion transmission experiments. The model accurately captures the magnitude and trajectory-dependence of the predicted energy losses. These results support the reliability of the model for predictive large-scale atomistic simulations of radiation cascades.
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Materials Science

Orbital angular momentum accumulation in SrVO3 thin films

Orbital transport in light transition metals has emerged as a promising route toward angular-momentum electronics, with Hanle magnetoresistance (HMR) providing a direct electrical probe of the orbital Hall effect (OHE) in non-magnetic conductors. Here we report magnetoresistance signatures consistent with orbital HMR in epitaxial SrVO$*3$ (SVO), a narrow-band $d^1$ oxide grown on (001)-oriented (LaAlO$*3$)$*{0.3}$(Sr$*2$TaAlO$*6$)$*{0.7}$ substrates. In films of different thickness and longitudinal resistivity, field-dependent measurements reveal a reproducible positive, even-in-field, and approximately quadratic $\Delta\rho*{x-y}$ response, as expected for HMR. Angular measurements characterize the corresponding magnetoresistance anisotropy and reveal an additional non-Hanle contribution. Density functional theory (DFT) calculations yield an intrinsic orbital Hall conductivity $\sigma*{\mathrm{OH}}^{\mathrm{DFT}} = 390,(\hbar/e),\Omega^{-1}\mathrm{cm}^{-1}$ and a spin Hall conductivity $\sigma_{\mathrm{SH}}^{\mathrm{DFT}} = -12,(\hbar/e),\Omega^{-1}\mathrm{cm}^{-1}$ at the Fermi level, corresponding to $|\sigma_{\mathrm{OH}}^{\mathrm{DFT}}/\sigma_{\mathrm{SH}}^{\mathrm{DFT}}| \approx 33$, thus indicating a predominantly orbital response. Using the diffusive HMR framework with $\lambda_{\mathrm{OD}} = 2$ nm as a reference value, the 20.8 nm film gives conservative saturation-limit lower-bound (LB) estimates $\theta_{\mathrm{OH,LB}} = 0.0144 \pm 0.0004$ and $\sigma_{\mathrm{OH,LB}} = (460 \pm 11),(\hbar/e),\Omega^{-1}\mathrm{cm}^{-1}$, comparable to the DFT value. Across the series, lower-bound estimates obtained with the same $\lambda_{\mathrm{OD}}$ increase overall with longitudinal conductivity. These results suggest that narrow-band $d^1$ metallic oxides are a promising platform for orbital transport.
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All authors Julien Brehin, Montserrat X. Aguilar-Pujol, Dongwook Go, F. Casanova, J. Fontcuberta, E. Longo

Materials Science

Single Best Fits Can Be Misleading: Resolving Common Trapping Signatures across FA–Cs Perovskites

Identifying defects responsible for non-radiative recombination in metal-halide perovskites remains challenging, with no common defect signatures established across compositions. Here, we combine fluence-dependent time-resolved photoluminescence, full Shockley–Read–Hall modelling and Bayesian posterior inference across an FA$_{1-x}$Cs$_x$PbI$_3$ compositional series. We show that trap occupation governs carrier dynamics and defect-parameter identifiability in semiconducting materials: weakly occupied states exhibit electron-capture-coefficient–trap-density degeneracies, whereas trap filling lifts them. In our perovskite systems, a non-degenerate signature $T\beta$, characterized by a strongly asymmetric $\beta_p/\beta_n$ capture-coefficient ratio, occurs across all compositions, suggesting substantial trap filling is a general feature of perovskite carrier dynamics. We further identify $T\alpha$ as a shared, device-performance-limiting non-radiative recombination channel, while a shallow $T\epsilon$ signature unique to FAPbI$_3$ produces the largest steady-state non-radiative recombination rate and is consistent with the previously observed high stacking-fault density of this composition. This framework therefore provides a basis for comparing trapping signatures across different semiconducting materials at room temperature.
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All authors Maxim Simmonds, Katarzyna Pydzińska-Białek, Thomas C. Rossi, Mostafa Othman, Aïcha Hessler-Wyser, Christian Wolff, Christophe Ballif, Vincent M. Le Corre, Eva Unger

Materials Science

Strain-Induced Relaxor Multiferroicity at Room Temperature in Hexaferrite BaFe12O19 Thin Films

Multiferroic materials that combine magnetic and electric order at room temperature are rare. Here, we demonstrate strain-induced room-temperature polar order in the ferrimagnetic hexaferrite BaFe12O19. First-principles calculations reveal a strain-tunable energy landscape with multiple competing dipolar configurations and predict that compressive strain favors polar distortions. Using an isostructural Sr1.03Ga10.81Mg0.58Zr0.58O19 substrate, we grow coherently strained BaFe12O19 films with 1.1% in-plane biaxial compression. Second-harmonic generation measurements demonstrate inversion-symmetry breaking and establish a strain-stabilized polar phase that persists to at least 1000 K. Multislice electron ptychography directly reveals enhanced off-centering of Fe3+ ions within the trigonal-bipyramidal sites of the strained films and spatially varying local polarization, demonstrating the formation of polar nanoregions. Path-integral Monte Carlo simulations further show that compressive strain suppresses quantum fluctuations and stabilizes these local polar distortions. Together, these results establish strain-engineered BaFe12O19 as a room-temperature relaxor multiferroic, in which robust ferrimagnetism coexists with nanoscale polar order. Our work demonstrates a route for transforming an incipient ferroelectric ferrimagnetic into a polar magnetic material through epitaxial strain.
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All authors Yilin Evan Li, Harikrishnan KP, Sankalpa Hazra, Zhiren He, Jayanti Higgins, ChanJu You, Mario Brützam, Jiaqiang Yan, Anna Park, Maya Ramesh, Wenwen Zhao, Jayda Shine, David G. Mandrus, Ramamoorthy Ramesh, Ankit S. Disa, Christo Guguschev, Guru Khalsa, Craig J. Fennie, Venkatraman Gopalan, Yu-Tsun Shao, David A. Muller, Darrell G. Schlom

Materials Science

The Critical Role of Itinerant Contributions to Orbital Angular Momentum Relaxation and Dynamics

Orbital angular momentum (OAM) is a promising degree of freedom for low-dissipation transport and magnetization control, yet its relaxation mechanisms remain controversial, with atomcentered approximations (ACA) predicting much shorter OAM diffusion lengths than experiments. We address this discrepancy using first-principles Lindbladian density-matrix dynamics, capturing electron-phonon scattering and itinerant OAM contributions, together with a first-principles parameterized tight-binding approach that separates the ACA and itinerant components. In MoS2,a strong-spin-orbit-coupling (SOC) system, orbital relaxation is multi-timescale, with fast intervalley redistribution followed by slower decay coupled to the spin. In weak-SOC silicene, spin and orbital dynamics decouple; an electric field tunes spin relaxation while leaving orbital lifetimes unchanged. In both materials, ACA orbital lifetimes are at least one order of magnitude shorter than itinerant ones, due to ultrafast precession driven by crystal-field splitting, absent from the itinerant component. These results demonstrate that going beyond atom-centered models is essential for describing orbital relaxation and diffusion.
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All authors Andrew C. Grieder, Luis M. Canonico, Frederico Simões, Aron W. Cummings, Yuan Ping

Materials Science

Adaptive Mesh Coarsening for Efficient Phase-Field Fracture Simulations

Phase-field models provide a versatile framework for simulating fracture nucleation and propagation without explicit crack tracking. Their principal computational challenge is the need to resolve a small regularization length with a sufficiently fine finite element mesh. This requirement can render uniform-mesh simulations prohibitively expensive, particularly for three-dimensional problems, problems involving distributed crack nucleation, and soft nearly incompressible materials. Adaptive mesh refinement offers a natural means of reducing this cost, but existing approaches often rely on heuristic refinement indicators, are primarily designed for problems containing pre-existing cracks, and retain increasingly large refined regions as cracks grow in size. This work presents an adaptive mesh coarsening framework along with adaptive mesh refinement for phase-field fracture. The coarsening strategy replaces the fractured region in the crack wake with a coarse crack band that preserves the essential mechanical behavior of a crack, making it necessary to have a refined mesh only in a small region near the tip of the growing crack. The method introduces a physics-based refinement indicator derived from the violation of the material strength surface, which is a necessary condition for fracture evolution. The indicator therefore robustly identifies regions where crack nucleation or propagation is imminent and can be applied across arbitrary materials, geometries, and loading conditions. The framework is implemented in parallel within FEniCSx; the supporting finite element codes are made available. Its generality and substantial computational benefit are demonstrated through benchmark problems involving crack propagation and nucleation under quasi-static and dynamic loading, for soft and hard materials, and for thermomechanical fracture.
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Thursday 17 September

Materials Science

A Hybrid Quantum Neural Network to Analyse Big Experimental Powder X-ray Diffraction Data

Quantitative analysis of experimental powder X-ray diffraction data remains challenging when evaluating complex multiphase materials and noisy measurements. We introduce a hybrid quantum neural network framework designed to extract quantitative parameters, such as phase weight fractions and scale factors, directly from one-dimensional powder diffraction patterns without iterative refinement. The model combines noise-aware classical simulator pre-training with fast downstream fine-tuning on quantum processing unit features, ensuring stability against hardware decoherence. We demonstrate the practical utility of this approach by deploying the trained network onto an IBM quantum computer to analyse experimental X-ray diffraction computed tomography datasets from a three-phase solid oxide fuel cell containing ca. 10,000 patterns and a four-phase lithium-ion battery containing ca. 20,000 patterns). The network successfully reconstructs quantitative spatial phase maps in strong agreement with classical Rietveld refinement, paving the way for using quantum computing hardware to analyse real-world materials characterisation data.
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All authors H. Dong, S.D.M. Jacques, M.Q. Hlatshwayo, E. Papoutsellis, K. Georgopoulos, A. M. Beale, A. Vamvakeros

Materials Science

From Ferroionic Instability to Domain Patterns at an Exposed Surfaces of Multiaxial Ferroelectrics

We analyze the formation of domain structures in multiaxial ferroelectrics with an open, electrochemically compensated surface. The model combines vector polarization, surface electrochemistry, electrostatics, compatible strain, and competitive adsorption on common sites. We construct homogeneous phase maps and analyze polarization instabilities, first assuming perturbations that are uniform through the film thickness and then allowing depth-dependent polarization profiles. Nonlinear continuation follows the growth of these modulations into developed domains. Optimization of their period and tests of their stability establish how the initial instability wavelength relates to the preferred spacing of an established domain structure. We also consider surface ordering above a stable, weakly anisotropic bulk as a constitutive limit relevant to ferroelectric relaxors, providing insight into possible origins of their periodic surface modulations. Surface energies with the same quadratic terms can produce the same initial instability but favor different developed states, including periodic domains and uniform in-plane polarization. This analysis provides a procedure for connecting the initial development of ferroelectric modulations to amplitude selection, wavelength adjustment, and the subsequent evolution of the resulting domain structures.
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Materials Science

Polymer-free Assembly of Unencapsulated van der Waals Heterostructure Devices

Van der Waals (vdW) heterostructures provide a versatile platform for exploring emergent quantum phenomena, yet their fabrication is often limited by interfacial contamination and incompatibility with surface-sensitive characterization. Here, we demonstrate muscovite mica as a polymer-free platform for assembling and patterning vdW heterostructure devices. Mica-mediated transfer enables clean exposed surfaces suitable for atomic-resolution scanning tunneling microscopy (STM) following mild thermal annealing, without aggressive post-processing. Mica also serves as a mechanically robust support for sequential pickup assembly, eliminating intermediate release steps. Furthermore, exfoliated mica flakes function as removable shadow masks for contact deposition, enabling straightforward patterning without conventional lithography. We quantify the temperature dependence of mica-mediated graphene pickup and demonstrate gate-dependent transport in a three-terminal graphene/hBN device fabricated using the approach. By integrating transfer, sequential assembly, and contact patterning within a single materials platform, mica provides a simple and accessible route to unencapsulated vdW heterostructures for surface-sensitive spectroscopy and quantum-device applications.
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All authors Han Xuan Wong, Junjie Yu, Yuyi Yan, Adam Cronin, Felix R. Fischer

Materials Science

Mechanism of charge transfer and electrostatic field fluctuations in complex metallic alloys

Complex metallic alloys exhibit rich disorder-driven electronic, magnetic, and vibrational behavior arising from strong chemical disorder, leading to unconventional structure-property relationships with applications in extreme-environment materials, catalysis, spintronics, and thermoelectrics. Despite their technological relevance, the microscopic nature of charge redistribution and electrostatic fluctuations in chemically disordered alloys remains incompletely understood. Here, we develop a theoretical framework that uncovers universal statistical trends of disorder-driven charge transfer and Madelung-field fluctuations. Our analytical formalism demonstrates that local charge transfer and electrostatic potentials exhibit Gaussian-like statistics and universal linear charge-potential (qV) correlations emerging directly from the underlying disorder landscape. We identify the physical origin of these correlations in the interplay between electronic screening and impurity scattering and show how their statistical properties depend on carrier density, disorder strength, and compositional complexity. We further derive scaling relations governing qV trends across binary and multicomponent alloys, including high-entropy materials. Large-supercell density-functional theory (DFT) calculations show good quantitative agreement with the predicted statistical behavior for representative metallic alloys. Our results provide a computationally efficient framework for incorporating disorder-driven electrostatic fluctuations into effective-medium electronic-structure theories and establish a statistical-physics foundation for the predictive design of complex alloys.
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All authors Wai-Ga D. Ho, Wasim Raja Mondal, Swarnava Ghosh, Hanna Terletska, Ka-Ming Tam, Mariia Karabin, Markus Eisenbach, Yang Wang, Vladimir Dobrosavljević

Materials Science · Cross-listed from cond-mat.mes-hall

Bend Contour Electron Tomography (BCET): Quantitative strain and topography mapping

Freestanding thin films of quantum materials naturally develop sub-micrometer, nonuniform strain fields that strongly affect their electronic, magnetic, and structural properties in both equilibrium and nonequilibrium conditions. However, current methods to quantitatively resolve these mesoscopic features are primarily restricted to scanning probes, making it challenging for dynamical measurements such as single-shot imaging and femtosecond microscopy. Here, we present a new computational framework which we denote as bend contour electron tomography (BCET), which efficiently converts bend contours in transmission electron microscope images into quantitative two-dimensional maps of strain and topography. By iteratively minimizing a designed loss function between experimental and simulated bend contour images, BCET retrieves both surface morphology and in-plane strain tensor fields without requiring scanning or diffraction mapping. We applied BCET to freestanding SrTiO$_3$ thin films, demonstrating the successful reconstruction of the local strain distribution and curvature field with high fidelity. Our approach provides a quantitative framework for characterizing mesoscale structures in freestanding films using wide-field imaging, opening new avenues to investigate how spatial inhomogeneity governs phase transitions and nonequilibrium dynamics in two-dimensional quantum materials.
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All authors Henry G. Bell, Chenhang Xu, Arthur McCray, Minyong Han, Yicheng Zhuang, Harold Y. Hwang, Colin Ophus, Alfred Zong

Materials Science

Dual-Sublattice Ferromagnetism Driven by Cooperative Double Exchange and Superexchange at NdNiO$_3$/CaMnO$_3$ Interfaces

Engineering emergent ferromagnetism at correlated-oxide interfaces offers a powerful route to creating collective states that do not exist in the parent materials. Here, we show that interfacial valence reconstruction in NdNiO$_3$/CaMnO$_3$ superlattices generates dual-sublattice ferromagnetism involving both Mn and Ni. Depth-resolved standing-wave X-ray photoelectron spectroscopy reveals enhanced Mn$^{3+}$ character on the CaMnO$_3$ side of the interface and enhanced Ni$^{2+}$ character on the NdNiO$_3$ side, establishing the configurations required for Mn$^{4+}$-O-Mn$^{3+}$ double exchange and Ni$^{2+}$-O-Mn$^{4+}$ superexchange, respectively. At low temperature, element-specific XMCD reveals ferromagnetic responses from both sublattices, with the Ni response concentrated predominantly in the Ni$^{2+}$-derived spectral component that SW-XPS independently shows to be enhanced at the interface. Together, these results show that cooperative double exchange within CaMnO$_3$ and superexchange across the interface couple the Mn and Ni sublattices, providing a general strategy for engineering interfacial ferromagnetism in correlated oxides.
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All authors Sharup Sheikh, Uditha M. Jayathilake, Michael Terilli, Mikhail Kareev, Jay R. Paudel, Arian Arab, Christoph Klewe, Tien-Lin Lee, Jak Chakhalian, Alexander X. Gray

Materials Science · Cross-listed from cond-mat.mes-hall

Singular high-harmonic transport above a quantum threshold

We show that Landau-Zener tunneling in a small-gap insulator produces a singular DC current–voltage relation, and correspondingly, strong high-harmonic generation in AC transport. Remarkably, high-harmonic responses decrease subexponentially with harmonic order, which is parametrically slower than in ordinary conductors and PN diodes. We further derive a scaling law for the current amplitude at frequency $n\omega$ produced by the applied electric field $E$ at fundamental frequency $\omega$. Our work offers a promising route to THz generation based on frequency multiplication in solids.
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Materials Science

Faulted loop nucleation and dopant activation in Al-implanted 4H-SiC

We present a molecular dynamics (MD) study of Al implantation in 4H-SiC to determine how implantation temperature and dose affect defect evolution and dopant activation during annealing. Simulations use the Gao-Weber potential with a Morse Al-SiC interaction reparameterized to density functional theory diffusion and kick-in/kick-out barriers. At Al concentrations above the saturation limit of ~2e20/cm3, implantation at 900 K promotes interstitial-rich planar clusters already during implantation. During annealing, these clusters trap Al and evolve into faulted interstitial loops, reducing substitutional Al incorporation. In contrast, lower implantation temperatures preserve stronger local disorder that is consumed during epitaxial regrowth, resulting in higher chemical activation within MD-accessible annealing times. Atomistic trajectories show a thermally activated transition to faulted loops once planar clusters reach about 60 interstitials. Rather than nucleating as a single coherent disk, several locally faulted regions form first and subsequently merge. The activation energy is ~1.1 eV for dislocation nucleation and ~2.1 eV for stacking-fault growth. Frank-type loops dominate at high temperature, while transient Shockley partials occur mainly at early stages and below 2000 K. As large planar defects form and dissolve, stable compensating Al-C complexes also emerge. These findings support the experimental hypothesis that secondary defects contribute to the reduced Al activation observed under supersaturation during annealing.
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All authors Sabine Leroch, Robert Stella, Andreas Hössinger, Lado Filipovic

Materials Science

Deformation-induced amorphous complexion transitions elevate strength and ductility

Grain boundary engineering is a major avenue for tailoring the mechanical behavior of polycrystalline materials. Grain boundary complexions, including amorphous intergranular films, are classically accessed through thermal driving forces and solute segregation. Here, we discover that plastic deformation can drive amorphous complexion transitions at room temperature in a chemically primed nanocrystalline binary CuZr alloy. High-resolution and four-dimensional scanning transmission electron microscopy reveal that the amorphous complexions preferentially emerge at incoherent twin boundaries. Spatially-resolved electron pair distribution function analysis at the atomic scale, the local-order characterization of amorphous complexions, demonstrates short-range and medium-range order gradients from crystal-templated interfaces to a metallic-glass-like core. We thus uncover a novel amorphous complexion transformation-induced plasticity mechanism that concurrently increases the yield strength, fracture strain, and tensile toughness about a factor of two relative to a designed reference material. Our findings establish mechanical deformation as a non-thermal pathway to trigger amorphous interfacial states for enhancing damage tolerance in nanostructured metals.
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All authors Masoud Ahmadi, Jin Qin, Gabrielle Tiphéne, Mohamed Charai, Alejandro Gómez-Pérez, Khalid Hoummada, Thomas Pardoen, Matteo Ghidelli, Hosni Idrissi

Materials Science · Cross-listed from cond-mat.str-el

Spacetime Dynamics of Altermagnetic Magnons

Distinguishing altermagnetism from conventional ferromagnetism and antiferromagnetism typically relies on momentum-space probes. Here, we show that the real-space spreading of a localized spin excitation provides a distinctive dynamical fingerprint of altermagnetic order. Using linear spin-wave theory on a two-dimensional checkerboard lattice with nearest-neighbor and next-nearest-neighbor couplings J_1 and J_2, we demonstrate that finite J_2 produces direction-dependent magnon group velocities and splits the two magnon branches. The resulting propagation remains closer to that of an antiferromagnet than a ferromagnet, retaining an approximately circular outer wavefront, while the direction-dependent magnon velocities produce a pronounced cross-like spatial structure inside this front. We further show that changing the sign of J_2 to enter the unfrustrated regime (J_2<0) increases the characteristic propagation velocities and interchanges the diagonal directions of enhanced propagation, corresponding to a pi/2 rotation of the anisotropic spatial pattern. These results establish spacetime dynamics as a complementary probe of altermagnetic magnons, providing a route to identifying unconventional magnetic order through real-space propagation patterns in solid-state and synthetic quantum systems.
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Materials Science

A Gaussian process coarse-grained potential for Na-montmorillonite

Hydraulic transport in compacted bentonite is diffusion-controlled and governed by the hydration and microstructure of sodium montmorillonite (Na-MMT). Experiments cannot resolve how platelet interactions govern pore structure, transport and stiffness, while existing coarse-grained models smooth hydration oscillations or require manual corrections. We develop a tabulated potential combining Morse interactions between platelet centre and edge sites with a Gaussian process regression correction trained on all-atom potentials of mean force. It captures the hydration-induced complexity of the potential-of-mean-force profiles, including the three-water (3-W) hydration minimum and transfers across geometries, layer-charge variants and unseen configurations. Applied to monodisperse and polydisperse Na-MMT assemblies at dry densities of 0.8-1.3 g cm^-3, the model captures the 3-W to 1-W transition, loss of non-interlayer porosity and evolution of pore structure, random-walk tortuosity, diffusion and stiffness. Predicted diffusion agrees with compacted Na-bentonite measurements.
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All authors Yalda Pedram, Yaoting Zhang, Laurent Brochard, Chang Seok Kim, Laurent Karim Béland

Materials Science

First-principles theory of phonon renormalization from nonlinear electron-phonon interactions

Electron-phonon interactions renormalize phonon frequencies and lifetimes and are central to the dynamical properties of solids. While these effects are usually described within linear electron-phonon coupling, the role of nonlinear electron-phonon interactions for phonon properties remains largely unexplored. In this work, we study phonon renormalization arising from the long-range linear one-electron-one-phonon and the nonlinear one-electron-two-phonon interactions within a diagrammatic framework. We derive the corresponding self-energy diagrams, which depend on the chemical potential and temperature, and evaluate them from first principles for the two polar semiconductors LiF and KTaO$_3$. In both materials, the two interaction channels renormalize the phonon spectrum in qualitatively distinct ways. The linear contribution is sharply localized near the Brillouin-zone center, whereas the nonlinear process couples an incoming phonon to other branches throughout the spectrum. As a result, it renormalizes phonons across the entire Brillouin-zone, with a pronounced temperature dependence governed by the thermal occupation of those branches. This behavior provides a clean experimental signature of the one-electron-two-phonon coupling. While the nonlinear phonon renormalization is small in LiF, it is somewhat larger in KTaO$_3$, which we attribute to its greater number of thermally populated phonon branches at room temperature. Our results establish a general framework to assess nonlinear electron-phonon effects on the phonon properties in materials with stronger lattice fluctuations, including soft semiconductors such as lead-halide perovskites.
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All authors Florian Kluibenschedl, Matthew Houtput, Jacques Tempere, Cesare Franchini, Mikhail Lemeshko, Ragheed Alhyder

Materials Science

Spin-Lattice Dynamics and Interactions in Magnonic Spinels

Minimizing magnetic damping while understanding spin-lattice interactions remains a key challenge for magnonics. We show site-specific Al/Li ordering in spinel ferrites drives a ferrimagnetic insulating state, quenching the Fermi-level density of states. Ab initio calculations reveal collective acoustic modes alongside sub-lattice-selective optical modes on tetrahedral and octahedral networks, providing a microscopic understanding of substitution-driven spin dynamics. Crucially, the low-frequency magnon and acoustic phonon modes intersect, driving strong hybridization for low-loss technologies.
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All authors Hari Paudyal, Yuri Suzuki, Michael E. Flatté, Durga Paudyal

Materials Science

Magnon-Phonon Dynamics in Multidimensional Antiferromagnetic Oxides

Antiferromagnetic oxides offer a compelling paradigm for magnonics. Combining ab initio and spin Hamiltonian modeling, we map Cr2O3 from bulk to monolayer limits, verifying stability via phonon spectra. Contrary to previously predicted half-metallic ferromagnetic monolayer phases, we conclusively demonstrate that monolayer and bilayer configurations preserve an antiferromagnetic semiconductor ground state despite systematic gap narrowing. Intersecting magnon and phonon branches drive strong hybridization, establishing low-dimensional Cr2O3 as an ideal platform for quantum spintronics.
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Materials Science · Cross-listed from cond-mat.str-el

Multiconfigurational Analysis of Local Electronic Structure of $\mathrm{RuO_2}$ Using Relativistic Embedded Clusters

We present a multiconfigurational, relativistic embedded-cluster study of the local electronic structure of ruthenium dioxide ($\mathrm{RuO_2}$), a candidate altermagnetic material. Starting from free $\mathrm{Ru}$ ions, we progressively build up the local environment through a $\mathrm{Ru+Q_6}$ electrostatic model, a bare $\mathrm{[RuO_6]^{8-}}$ ligand model, and finally a high-accuracy $\mathrm{RuO_6}$@CTEP embedded cluster that reproduces the crystalline surroundings. All systems are treated at the SA-CASSCF and NEVPT2+SOC levels of theory to capture strong electron correlation and spin-orbit coupling on an equal footing. While the formal local site symmetry of the $\mathrm{Ru}$ sites in $\mathrm{RuO_2}$ is orthorhombic ($D_{2h}$), we find that the calculated $4d$-orbital energy spectrum and its splitting pattern behave much closer to the higher tetragonal ($D_{4h}$) symmetry, preserving a strong quasi-degeneracy among the relevant $4d$ orbitals. Since the local $xy$ quadrupolar order responsible for altermagnetic spin splitting in independent-particle models relies on this symmetry reduction, its suppression by orbital quasi-degeneracy offers a natural explanation for why altermagnetism is not observed in bulk $\mathrm{RuO_2}$ experiments, in contrast to the robust altermagnetic signatures reported in strained thin films.
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All authors Zhosan I. A., Lomachuk Yu. V., Maltsev D. A., Moiseev I. A., Andreev O. Yu

Materials Science · Cross-listed from physics.chem-ph

Truncated automatic sparse differentiation for machine learning interatomic potentials

Machine learning interatomic potentials (MLIPs) learn the mapping from atomic positions to potential energy. The forces, the negative gradient of this energy, drive molecular dynamics and are readily obtained using automatic differentiation. Higher-order derivatives, most notably the Hessian, describe collective motion and allow the direct prediction of experimental observables, but are considered computationally inaccessible for large systems. We suggest a solution: in physical systems, interactions decay with distance, and most MLIPs build on this locality through message passing up to a finite receptive field. This implies both sparsity of higher-order derivatives and their decay with distance. This structure can be exploited using automatic sparse differentiation (ASD). We explain how to compute the sparsity pattern for MLIP derivatives and demonstrate that, for multiple foundation MLIPs, ASD computes full Hessians of large porous materials exactly, but with modest speedups at best. The larger gains come from truncated ASD: discarding small, but nonzero, Hessian entries between distant atoms yields order-of-magnitude speedups with negligible impact on predicted observables.
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Materials Science

Strain-Induced Metal-to-Insulator Transition in Antiferromagnetic SrCrO$_3$ Thin Films

Antiferromagnetic (AF) metals are rare, yet they combine properties attractive for spintronic devices like robustness against stray fields and electrical readout. Among AF metal oxide candidates, SrCrO$_3$ remains largely unexplored due to its notoriously difficult synthesis. In this paper, we demonstrate the growth of high-quality SrCrO$_3$ thin films by magnetron sputtering on substrates that impose a wide range of tensile and compressive strains. Muon spin relaxation experiments, supported by x-ray magnetic dichroism, unveil the emergence of an AF phase with dilute magnetic disorder at low temperatures, while resistivity measurements confirm the simultaneous metallic ground state of SrCrO$_3$ under low strain. As both compressive and tensile strain increase, a metal-to-insulator transition is induced in the films, while the onset of the magnetic transition temperature remains unchanged. Moreover, an intriguing resistivity upturn, accompanied by a change in the dominant charge-carrier type, occurs at a temperature that correlates with strain. These observations suggest a complex strain-dependent band structure, with strain-induced Jahn-Teller distortions or tilting of the CrO$_6$ octahedra that emerge depending on the sign of the strain, as inferred from density functional theory calculations.
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All authors S. Jöhr, A. Carta, J. Moreno, A. Suter, Z. Salman, A. Panda, J. Spring, G. De Luca, J. Herrero-Martin, B. Mundet, C. Piamonteze, M. Gabay, C. Ederer, M. Gibert

Materials Science

Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics

Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining the physical mechanisms behind these MW improvements is critical to reaching the full potential of HZO FeNAND. Here, we show that MW improvements stem from the interfacial charge dynamics enabled by oxygen vacancies at the interlayer interface. X-ray photoelectron spectroscopy(XPS) etching experiments demonstrate increased off-stoichiometry at the interface, with a 2.3x increase in oxygen vacancies. Polarization-dependent XPS and first-order reversal curves(FORC) show that tunneling between interfacial defect states causes a bidirectional internal bias of 0.56MV/cm. The impact of defects is further corroborated through phase-field modeling(PFM), which only recreates the coercive fields, FORC, and internal bias for defect densities and tunneling barrier heights that are consistent with experiment, quantitatively capturing an internal electric field of 0.55 MV/cm. The phase field models are then used to simulate 36 devices with varied charge densities and dielectric thickness to provide a predictive framework for further improvements in the MW of interlayer HZO. These findings redefine the role of defects in ferroelectric HZO from deleterious to engineerable and provide critical insights into how to tune ferroelectric device architectures for improved memory.
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All authors Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun, John Wellington-Johnson, Lance Fernandes, Prasanna Venkatesan Ravindran, Bogdan Dryzhakov, TaeYoung Song, Mengkun Tian, Asif I. Khan, Lauren M. Garten

Materials Science · Cross-listed from cond-mat.mes-hall

Disorder-induced modulation of the nonlinear Hall effect in Weyl semimetals

We study the effects of impurity scattering on the nonlinear Hall response of Weyl semimetals within the semiclassical Boltzmann approach. We derive the rectified and second-harmonic conductivity tensors for a general momentum-dependent transport relaxation time and evaluate this quantity microscopically for short-range, Gaussian, screened Coulomb, and magnetic impurities. For scalar disorder, the relaxation time is isotropic and chirality independent. The nonlinear Hall response is then determined by the anomalous velocity associated with the Berry curvature, and a finite net response requires energetically inequivalent Weyl nodes to avoid cancellation between opposite chiralities. Polarized magnetic impurities lead to a qualitatively different behavior. We find that interference between the first- and second-order Born amplitudes generates a helicity-dependent anisotropic correction to the relaxation time. This anisotropy changes the tensor structure of the nonlinear Hall conductivity and gives rise to a finite second-harmonic current for suitable orientations of the electric field relative to the impurity polarization. For representative parameters, however, the anisotropic contribution is several orders of magnitude smaller than the dominant isotropic response. These results establish how the microscopic form of impurity scattering enters the nonlinear Hall response of Weyl semimetals through the transport relaxation time.
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