Peer Revenue Now accepting positions

Papers

Fresh from arXiv, typeset properly. Highlighted words trade on the market.

Physics Condensed Matter Materials Science

cond-mat.mtrl-sci Watch Materials Science (sign in to use)

Monday 13 July

Materials Science

Impact of Electronic Energy Dissipation on Primary Radiation Damage Formation in Silicon

In this work, we investigate the role of ion-electron coupling in simulations of radiation damage formation in silicon using molecular dynamics simulations within a two-temperature model. We explore predictions of a threshold-free approach to the coupling that accounts for both the electronic stopping and electron-phonon coupling using a local electron density-based formalism. We compare two different coupling functions across a range of primary knock-on atom energies using two interatomic potentials. Our results demonstrate that the functional form of the ion-electron coupling plays a critical role in determining defect production efficiency, clustering, and recombination, and must therefore be carefully considered for accurate modeling of radiation damage formation. Furthermore, we find that the impact of the coupling in particular on the recombination of defects during the cooling phase of the cascade depends on the choice of interatomic potential, emphasizing the importance of physically grounded descriptions for both electronic effects and atom-atom interactions for reliable radiation damage predictions.
Read the full abstract

Materials Science

Anisotropic hot carrier relaxation mediated by electron phonon scattering in TiN thin films

Crystal orientations can shape the ultrafast energy relaxations of transition-metal nitride thin films. Here, we investigate the orientation-dependent electron-phonon (e-ph) mediated relaxation in titanium nitride (TiN) thin films along the [100], [110], and [111] directions by combining first-principles calculations with ultrafast pump-probe transient absorption spectroscopy. Using maximally localized Wannier functions, we evaluate e-ph quasiparticle scattering lifetimes near the Fermi level and identify a clear anisotropy: The TiN [111] orientation exhibits a longer e-ph scattering lifetime (15.96 fs) than [100] (13.69 fs) and [110] (11.12 fs), indicating reduced intrinsic e-ph scattering strength. Furthermore, we grew quasi-epitaxial, orientation-controlled TiN thin films on MgO substrates. Pump-probe measurements reveals that the population-level relaxation (hot-electron cooling) time also depends on orientations, with [111] films showing a significantly slower decay (110 fs) than [100] (90 fs) and [110] (80 fs). We emphasize that the calculated few-femtosecond scattering lifetimes and the measured few-hundred-femtosecond cooling time respectively represent single-event scattering and collective cooling, yet they exhibit consistent trends. These results demonstrate that crystallographic orientation provides a practical and powerful route to tune e-ph-governed relaxation in TiN thin films, offering essential design guidelines for refractory plasmonic and energy-conversion platforms.
Read the full abstract

All authors Hemant Verma, Tzu-Yu Peng, Shyr-Shyan Yeh, Sheng-Chieh Huang, Pritam Sardar, Yang-Hao Chan, Yu-Jung Lu, Chao-Cheng Kaun

Materials Science

Anomalous Transverse Response and Multi-Field Ferrialtermagnetic-Ferroelectric Valve with CrSb Flakes

Altermagnets combine the zero-stray-field of antiferromagnets with the spin polarization of ferromagnets, showing great potential for spintronic applications. Here, we propose ferrialtermagnetism as a distinct subclass of altermagnetic family, where symmetry-inequivalent altermagnetic sublattices possess nonidentical Neel vectors, preventing mutual cancellation of alternating spin splitting and conferring intrinsic robustness against perturbations. This concept is realized in the three-atomic-layer CrSb (110) flakes, which exhibits spin splitting of 344 meV, moderate uniaxial magnetic anisotropy, and high Neel temperature of 657 K. The magneto-optical Kerr and the anomalous Hall effects are observed. Integrating this ferrialtermagnetic CrSb with ferroelectric Sc2CO2 and Cu spacer, we design an ferrialtermagnetic-ferroelectric valve. This device displays equilibrium tunneling magnetoresistance and electroresistance of ~10^3%, and non-equilibrium magnitudes under bias, thermal, or light field reaches ~10^4% with high spin filtering of 90%. The negative differential resistance and photogalvanic effects, and photocurrent extinction ratio of 283.8 are achieved. These findings establish ferrialtermagnetism as a fertile platform for multi-field-controlled, ultracompact, and self-powered spintronics and electronics.
Read the full abstract

All authors Long Zhang, Xinfeng Chen, Hongfei Liang, Jianting Dong, Fei Zou, Yi Yan, Guangqian Ding, Guoying Gao

Materials Science · Cross-listed from physics.comp-ph

Uncertainty-Aware Structure-Property Mapping of Spinodoid Metamaterials via Heteroscedastic Gaussian Process Regression

Spinodoid metamaterials offer a broad, tunable design space for anisotropic mechanical properties, yet their structure-property relationships are commonly treated as representative mappings from cone-angle descriptors to single effective stiffness values. This deterministic view overlooks the stochastic nature of Gaussian random field (GRF)-based topology generation, where identical cone-angle descriptors can produce different morphology realizations and property scatter. Here, we present an uncertainty-aware structure-property mapping framework that reinterprets cone-angle descriptors as stochastic descriptors associated with input-dependent property distributions. Using heteroscedastic Gaussian process regression (GPR), the framework infers input-dependent predictive uncertainty from sparse one-realization-per-point data without requiring empirical variance labels at every design point. The results show that stiffness scatter differs across tensor components according to each component's mechanically active directions, and that parameter sets yielding identical mean stiffness can carry different aleatoric uncertainty. Applying this uncertainty to reliability-based design optimization (RBDO), we show that a deterministic optimum is highly susceptible to constraint violation once morphology-induced variability is considered, and that a homoscedastic RBDO formulation fails to meet the prescribed reliability target - only the heteroscedastic formulation satisfies the reliability target under the heteroscedastic uncertainty evaluation. This establishes uncertainty-aware surrogate modeling as essential for reliability-aware inverse design of spinodoid metamaterials; extending the framework to nonlinear responses remains for future work.
Read the full abstract

All authors Minwoo Park, Junseo Park, Mingyu Lee, Hugon Lee, Hanbin Cho, Ikjin Lee, Seunghwa Ryu

Materials Science

Temperature dependence of charge-to-spin conversion in rhombohedral (110) bismuth thin film

The amplitude of charge-to-spin conversion, namely the spin Hall effect (SHE), in bismuth (Bi) strongly depends on its crystal orientation. The conversion efficiency at room temperature in rhombohedral (110) bismuth is notably large as expected from its large spin-orbit interaction, and such a large SHE is ascribed to the large effective g-factor in bismuth [N. Fukumoto et al., Proc. Nat. Acad. Sci. 120, e2215030120 (2023)]. Despite the successful observation of the large conversion efficiency, a more detailed physical mechanism of the SHE in (110) bismuth is still elusive and under debate. In this work, we investigate the temperature dependence of charge-to-spin conversion in an epitaxial Bi(110)/Ni bilayer system using the second harmonic Hall method, revealing that both spin Hall conductivity and spin diffusion length augment with decreasing temperature. This finding suggests that spin scattering in (110) bismuth is dominated by the Elliott-Yafet mechanism, and the charge-to-spin conversion is mainly attributed to skew scattering.
Read the full abstract

All authors K. Tatsuoka, N. Fukumoto, S. Sakamoto, S. Miwa, Y. Fuseya, J. Fujimoto, R. Ohshima, J. Puebla, Y. Ando, M. Shiraishi

Materials Science

Electric field induced Berry curvature dipole in quasi-one-dimensional Bi$_4$I$_4$

The nonlinear Hall effect in time-reversal symmetric materials offers a powerful probe into quantum geometry. Here, we investigate the electric-field-tunable nonlinear Hall response in few-layer $\text{Bi}_4\text{I}_4$ using comprehensive first-principles calculations across both its $\alpha$ and $\beta$ phases. Guided by symmetry analysis, we track the evolution of the Berry curvature dipole (BCD) tensor from the monolayer to the bilayer configuration under an out-of-plane electric field. While the monolayer features a highly rigid band structure and modest BCD tunability, the bilayer architecture exhibits substantial field-induced band modifications, including a progressive Rashba splitting and eventual gap closure in the $\beta$ phase. Crucially, this field-tunability allows substantial enhancement of the BCD magnitude relative to the monolayer counterpart. Our findings establish quasi-one-dimensional bismuth halogenides as a promising platform for engineering nonlinear Hall response.
Read the full abstract

Materials Science

A Generalized Frank-Bilby Equation for Interfaces in Crystalline Materials

The classical Frank-Bilby equation (FBE) is commonly used to predict the structure of interfaces in crystalline materials in terms of interfacial dislocation networks. However, in general, the line defects in interfaces are disconnections, possessing both dislocation and step character, which are not captured by the classical FBE. As a result, the FBE cannot fully describe the structure of most interfaces of practical interest. To address this issue, we derive a generalized Frank-Bilby equation (GFBE) that explicitly incorporates both dislocation and step components of interfacial defects. We demonstrate its application to several representative interface systems.
Read the full abstract

All authors Dongsong Tao, Luchan Zhang, David J. Srolovitz, Yang Xiang, Jian Han

Materials Science

Tiling decomposition multiplicity predicts stability of GaN(0001) surface reconstructions

The stable adatom configurations of a semiconductor surface have traditionally been sought by sampling: density functional theory (DFT) energies steer a heuristic or Bayesian search through a configuration space far too large to cover. Here we show that, for the GaN(0001)-$(6\times6)$ surface under the electron counting (EC) rule, the search can instead be posed as a discrete tiling problem and solved exhaustively. Enumerating all rhombus tilings of the surface lattice, together with all EC-compatible adatom arrangements built on them, yields the complete catalog of 416,683 configurations at fixed stoichiometry (3 Ga adatoms and 18 H atoms), organized by symmetry into 14 Ga placement classes. The number of tilings compatible with a given configuration, its tiling decomposition multiplicity $n_\mathrm{til}$, predicts stability. Within each class, the configuration maximizing $n_\mathrm{til}$ is the most stable. The rule holds strictly in 13 of the 14 classes; in the remaining class the minimum is itself among the highest-multiplicity configurations, with the $n_\mathrm{til}$-max configuration only 8.5 meV above it; this ordering is reproduced by independent DFT calculations, and the difference is negligible at growth temperature. Stability screening uses a machine-learning interatomic potential validated against 710 DFT-computed structures. The rule reduces the candidate set for first-principles evaluation from 416,683 to 24 configurations, all of which have been evaluated with DFT. Analysis of the rule identifies the local mechanism, the avoidance of adjacent bare surface sites, while the existence of a compatible tiling remains a separate requirement with an energy cost of its own. Enumeration thus provides what sampling cannot: a coverage guarantee, and a route to stable-structure prediction in which first-principles input enters only at the final ranking step.
Read the full abstract

All authors Tetsuji Kuboyama, Akira Kusaba, Karol Kawka, Pawel Kempisty

Materials Science

Effect of annealing temperature on the structure and properties of co-sputtered Fe-Mn-Sn films near 2:1:1 ratio

Research in recent years has focused on the thin-film synthesis of high-quality ternary alloys, identified for their tunable properties and potential in spintronics (e.g., Heusler alloys, Kagome magnets). In a previous study, we identified the conditions for stabilizing Fe$_2$MnSn, a Kagome magnet with a high Curie temperature and magnetic anisotropy. However, ternary phases such as Fe$_2$MnSn are challenging to synthesize and stabilize within a narrow temperature window, as binary and elemental phases can also form during the growth process. To highlight these observations, we investigated the thin film phases in the Fe-Mn-Sn system near the 2:1:1 ratio as a function of annealing temperature, ranging from 400 to 700\degree C. The elemental Fe, Mn, and Sn targets were pre-calibrated to a close to 2:1:1 ratio and co-sputtered at room temperature, followed by annealing. Two binary hexagonal structures, Fe$_3$Sn$_2$ and Fe$_5$Sn$_3$, along with the elemental Fe phase, are stabilized between 400-550\degree C, but disappear at 580\degree C, where Fe$_2$MnSn is the only stable phase. Elemental Mn phase starts to appear starting from 600\degree C, and becomes dominant by 750\degree C. Electrical, magnetic and magneto-optical properties are observed to correlate with the structural findings and the best properties are observed in the temperature range where Fe$_2$MnSn is the dominant phase. In general, our study highlights the difficulty in growing phase-pure ternary alloys such as Fe$_2$MnSn, which is very strongly based on precise temperature conditions. We also observed significant disordered growth below 100 nm for Fe$_2$MnSn, implying poor thickness scaling behavior.
Read the full abstract

Materials Science

Neural-network-based reconstruction of spin and orbital angular momentum from X-ray magnetic circular dichroism spectra

X-ray magnetic circular dichroism (XMCD) is a powerful probe of element-specific spin and orbital angular momentum. Conventional analyses based on sum rules, however, rely on integrated spectral intensities and can become insufficient when multiple parameters influence the spectral line shape. Here, we formulate XMCD analysis as an inverse problem and develop a neural-network (NN) based approach to reconstruct spin and orbital angular momentum directly from full spectral line shapes. Using many-body multiplet calculations of Fe, Co, and Ni $L_{2,3}$-edge X-ray absorption spectra (XAS) and XMCD spectra as a physically well-defined training dataset, we systematically vary key parameters including crystal-field splitting, spin–orbit coupling, and exchange field. The NN is trained to map spectral line shapes onto the expectation values of spin and orbital angular momentm $\langle S_z \rangle$ and $\langle L_z \rangle$, and validated using strictly test-only data. The results demonstrate accurate and unbiased reconstruction, establishing a proof of concept for data-driven inverse reconstruction from XAS and XMCD spectra. These findings show that exploiting the full XAS and XMCD line shapes provide access to information beyond conventional sum-rule analyses while remaining consistent with established theoretical frameworks.
Read the full abstract

Materials Science

Telecom-band Chiral Light Detection through Hidden Giant Third-Order Nonlinear Circular Dichroism in Two-dimensional Halide Perovskite

Chiral nonlinear optical (NLO) responses enable efficient discrimination of circularly polarized light (CPL) and are attracting increasing interest for optical and optoelectronic technologies. However, studies on NLO properties in chiral materials have largely focused on second-order NLO processes, while the role of chirality in third-order NLO processes remains poorly explored. Here, we demonstrate telecom-band CPL detection by third harmonic generation circular dichroism (THG-CD) in the chiral two-dimensional perovskite (R/S-MBACl)2PbI4 and uncover a giant hidden THG-CD anisotropy that is accessible via polarization-resolved detection. Polarization-resolved THG measurements reveal that opposite chiral NLO responses emerge in orthogonal THG polarization channels. Therefore, these chiral anisotropic contributions largely cancel each other in the total-THG signal detection, leading to underestimation of the THG-CD dissymmetry in conventional evaluations based on total-THG intensity. By separating these hidden chiral contributions, we observe exceptionally large dissymmetry factors exceeding 1.9 and achieve selective extraction of chiral NLO responses with opposite handedness, without any structural chiral inversion. These findings highlight the importance of polarization-resolved analysis for evaluating more accurate chiral NLO responses inherent to the material and provide a promising platform for optical information processing, encryption, and anti-counterfeiting technologies at technologically relevant telecommunication wavelengths.
Read the full abstract

All authors Yuki Takahashi, Daichi Okada, Koshi Oi, Kazuki Mitamura, Takahiko Endo, Yasumitsu Miyata, Taishi Takenobu, Kenichi Yamashita

Materials Science · Cross-listed from cond-mat.supr-con

Ferroelectric–Superconducting Interaction in Epitaxial YBa2Cu3O7-{\delta}/BaTiO3 Films

Microscopic theories predict that the critical temperature of a superconducting layer can be strongly modified in proximity to a ferroelectric; however, experimental evidence is lacking. We report on BaTiO3 (BTO)/YBa2Cu3O7-{\delta} (YBCO) heterostructures grown on SrTiO3 (001) substrates using pulsed laser deposition (PLD), with precise control of growth conditions and oxygen stoichiometry. Piezoresponse force microscopy confirms ferroelectric switching within both single-layer and heterostructured films. Neutron reflectometry measurements show low roughness parameters for the buried interfaces, which is critical for mediating the interfacial coupling between superconductivity and ferroelectric polarization. The superconducting transition temperature ($T_{\mathrm{C}}^{R}$) measured from the $R(T)$ curve of the single-layer YBCO was approximately 86 K, and a transition temperature ($T_{\mathrm{C}}^{M}$) of approximately 80-85 K was observed from the $M(T)$ curve. For the heterostructure film (YBCO/BTO/YBCO) grown under the same conditions, both resistivity and magnetization measurements indicate lower transition temperatures of approximately 75 K and approximately 55 K, respectively, as well as a lower overall susceptibility. These findings highlight the need to combine multiple techniques to characterize BTO/YBCO heterostructures and identify subtle features of the ferroelectric–superconducting coupling. This establishes BTO/YBCO heterostructures as promising systems for tunable oxide electronics and reconfigurable superconducting devices.
Read the full abstract

All authors Louis Oppong-Antwi, David L. Cortie, Qi Zhang, Avi Bendavid, Nagarajan Valanoor, Wendy Purches, Golrokh Akhgar

Materials Science

Measurement of Kerr rotation using a variable-angle polarizer method

The magneto-optical Kerr effect (MOKE) occurs when polarized light reflects from a magnetized surface, causing a small change in the polarization angle and state. Measurement of the rotation in the angle (Kerr rotation) is well established and typically performed close to the null configuration in a polarizer-analyzer geometry. However, accurate measurement always remains a challenge and as the effect depends intricately on several optical parameters. Here we performed a series of longitudinal magneto-optical Kerr effect (MOKE) measurements on $p$ and $s$ polarized laser light at various polarizer angles on a Cobalt thin film and measured the orthogonal components of the reflected polarized light using a Wollaston prism. Analytical expressions for the orthogonal light components were fitted to the average intensity and the MOKE signal measured at different polarizer angles to obtain the Kerr roations. Our analysis yielded a $p (s)$-Kerr rotation of 0.46 (0.65) milliradians for a 633~nm laser at 45$^\circ$ angle of incidence, which agrees very well with our estimated value for Co using available literature data. Apart from being very accurate, the advantage of the process is that it eliminates the inherent uncertainties in single-point measurements of the Kerr rotation.
Read the full abstract

Sunday 12 July

Materials Science · Cross-listed from physics.comp-ph

Thermodynamically Consistent Machine Learning for Fracture Prediction in Heterogeneous Materials

Understanding fracture behavior is critical for assessing the structural integrity and longevity. Highly time-consuming physics-based fracture simulations motivate the development of machine-learning-based fracture evolution prediction with surrogate models. However, most existing machine-learning models for fracture prediction operate as black boxes and require large training datasets to generalize reliably. In this work, Thermodynamically Consistent Latent Dynamics Identification (tLaSDI) for parametric systems is introduced to predict fracture patterns and evolution in heterogeneous materials. The model learns the thermodynamic state variable in a lower-dimensional latent space using parametric GENERIC Formalism-Informed Neural Networks (pGFINNs) that enforce key thermodynamic principles, such as total energy conservation and entropy generation. This model embeds physics into the neural network architecture using a hard-constraint method that inherently complies with the underlying thermodynamic principles. The proposed tLaSDI-pGFINNs is further enhanced by a Geometry-Conditioned Autoencoder in learning the geometry configuration for effective geometry-guided learning. The energy and entropy evolution histories demonstrate that the model preserves the thermodynamic constraints on unseen testing samples. The results further show that tLaSDI-pGFINNs can more accurately capture both fracture patterns and the subsequent fracture evolution than the purely data-driven Autoencoder Long Short-Term Memory (AE-LSTM) model.
Read the full abstract

All authors Muhamad Alim, Xiaolong He, Mei-Na Tsao, Chi-Hua Yu, J. S. Chen

Materials Science · Cross-listed from math.NA

When is the combined load identifiable from a stress-intensity profile? A coupled forward-inverse study on SIFBench finite-element data

This work studies the inverse problem of recovering the relative magnitudes of the tension, bending, and bearing loads acting on a crack from its stress-intensity-factor profile along the crack front, using the public SIFBench finite-element data. The central claim is not forensic load recovery on field cases, but a rigorous characterization of when the combined load is identifiable at all, together with an estimator that returns calibrated uncertainty precisely in the regimes where it is not. For a known geometry the forward map from loads to profile is exactly linear, and identifiability reduces to a single geometric question: whether the three elementary load profiles are linearly independent as functions along the front. When they are nearly dependent, many different load combinations produce almost the same profile and the inverse problem is illposed; the analysis shows that the degree of ill-posedness is controlled by an intrinsic stability margin, not by the conditioning number alone. A single crack-front operator serves both as a structured forward surrogate and as the differentiable map required by a simplex-constrained, set-valued inverse estimator. On the SIFBench corner-crack scenario the empirical behaviour matches the theory: the typical geometry is well posed while a sizable minority is genuinely ill-posed, so a point estimate is reliable on the majority and provably uninformative on the rest. Validation is on controlled synthetic noise; no real fracture cases are used or claimed.
Read the full abstract

Materials Science

A Cluster-Based Model of the Spectrum of Erbium-Doped GdVO$_4$

Experimental observations of rare-earth ions doped into an antiferromagnetic crystal show an enriched optical spectrum. In this paper we present a cluster-based model to describe erbium ions doped into a gadolinium vanadate (Er:GdVO$_4$) host crystal, wherein the erbium ion couples directly to its four nearest neighbour gadolinium ions, which in turn couple to the mean field of the rest of the crystal. Compared to previous models in the literature, the parameters used to fit this model are fewer in number, with clearer physical origins. Agreement with the experimentally observed optical spectrum of Er:GdVO$_4$ suggests that our model succeeds in capturing the most important interactions of the system, suggesting that it may be useful for predicting microwave-to-optical transduction in future experiments.
Read the full abstract

All authors Zachary H. Roberts, Masaya Hiraishi, Luke S. Trainor, Jevon J. Longdell

Materials Science

High-Mobility Ge-Doped $\beta$-Ga$_2$O$_3$ Growth on Sapphire by Low-Pressure Chemical Vapor Deposition

In this work, high-quality Ge-doped (-201) $\beta$-Ga$_2$O$_3$ thin films were heteroepitaxially grown on c-plane sapphire substrates with offcut angles of 0 deg, 2 deg, 6 deg, and 8 deg using low-pressure chemical vapor deposition (LPCVD). Increasing sapphire offcut promoted step-flow growth, resulting in improved terrace alignment, reduced surface roughness, and enhanced crystalline quality. Phase-pure monoclinic $\beta$-Ga$_2$O$_3$ with strong (-201) preferential orientation was confirmed by X-ray diffraction and Raman spectroscopy, while X-ray photoelectron spectroscopy revealed near-stoichiometric composition with an O/Ga ratio of 1.48. Electrical transport properties exhibited a strong dependence on substrate offcut angle, with room-temperature Hall mobility increasing from 15 to 117 cm$^2$/V s as the offcut angle increased from 0 deg to 6 deg, across carrier concentrations spanning $1.43 \times 10^{17}$ to $2.75 \times 10^{18}$ cm$^{-3}$. The 6 deg offcut sample achieved a room-temperature mobility of 117 cm$^2$/V s at a carrier concentration of $1.43 \times 10^{17}$ cm$^{-3}$ and a peak low-temperature mobility of 337 cm$^2$/V s at 128 K with a carrier concentration of $8.96 \times 10^{16}$ cm$^{-3}$, representing the highest reported room-temperature and low-temperature mobilities for Ge-doped $\beta$-Ga$_2$O$_3$ films grown on sapphire substrates. Carrier concentration and mobility data were analyzed using charge-neutrality and Boltzmann transport models incorporating donor activation together with polar optical phonon, ionized impurity, neutral impurity, acoustic deformation potential, and dislocation scattering mechanisms. The fitting revealed shallow donor activation energies of 12.5-19 meV, a deeper donor level at 80 meV, low acceptor compensation ($< 5 \times 10^{15}$ cm$^{-3}$), and threading dislocation densities on the order of $10^9$ cm$^{-2}$.
Read the full abstract

All authors Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker, Ibrahim Isah, Stephen Margiotta, Michael Davenport, Stephen Lam, Anhar Bhuiyan

Materials Science

High-Quality Ge-Doped (010) $\beta$-Ga$_2$O$_3$ Homoepitaxial Films Grown by Low-pressure CVD: Structural, Electrical, and Schottky Diode Characteristics

In this work, Ge-doped $\beta$-Ga$_2$O$_3$ homoepitaxial films were grown on native (010) $\beta$-Ga$_2$O$_3$ substrates using low-pressure chemical vapor deposition (LPCVD). Controlled $n$-type doping was achieved with room-temperature carrier concentrations ranging from $7.4\times10^{17}$ to $2.57\times10^{18}\ \mathrm{cm}^{-3}$ and corresponding electron mobilities of 105-62 cm$^2$/V$\cdot$s. The films exhibited smooth surface morphology with RMS roughness values of 2.94-3.97 nm, while X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy confirmed phase-pure $\beta$-Ga$_2$O$_3$ with excellent crystalline quality and near-stoichiometric composition. Temperature-dependent Hall measurements on the film with a room-temperature carrier concentration of $7.4\times10^{17}\ \mathrm{cm}^{-3}$ and mobility of 105 cm$^2$/V$\cdot$s yielded a peak electron mobility of 234 cm$^2$/V$\cdot$s at 116 K, while charge-neutrality and transport modeling revealed a dominant shallow donor level with an activation energy of 14 meV, confirming efficient electrical activation of Ge donors. Vertical Ni/$\beta$-Ga$_2$O$_3$ Schottky barrier diodes fabricated using the Ge-doped drift layer exhibited good rectifying behavior with a turn-on voltage of 0.74 V, an ideality factor of 1.32, a Schottky barrier height of 1.02 eV, and a specific on-resistance of 2.49 m$\Omega\cdot$cm$^2$. Capacitance-voltage measurements yielded a net donor concentration of $7.7\times10^{17}\ \mathrm{cm}^{-3}$ and a Schottky barrier height of 1.13 eV, in good agreement with Hall and current-voltage measurements. These results demonstrate that LPCVD enables controllable Ge doping while maintaining high structural and electronic quality, establishing LPCVD-grown Ge-doped $\beta$-Ga$_2$O$_3$ as a promising platform for future high-voltage power electronic devices.
Read the full abstract

All authors Ahmed Ibreljic, Saleh Ahmed Khan, Sourav Sarker, Stephen Margiotta, Stephen Lam, Anhar Bhuiyan

Materials Science

Catalog of Altermagnetism in Magnetic Wallpaper/Space Groups and Nonsymmorphic Altermagnets

Conventional altermagnetism, characterized by compensated collinear spin alignment and spin splitting, exhibits identical spin states at opposite momenta. In this work, we employ a non-spatial global symmetry $S$, the spinless time-reversal symmetry, which effectively replaces inversion symmetry in preserving the spin-state equivalence; hence, we systematically extend the classification of altermagnetism to all possible non-centrosymmetric crystals. By analyzing the necessary symmetry conditions, we provide a complete catalog of altermagnetic orders for all 2D magnetic wallpaper groups and all 3D magnetic space groups, identifying 17 altermagnetic wallpaper groups (12 centrosymmetric and 5 non-centrosymmetric) and 422 altermagnetic space groups (160 centrosymmetric and 262 non-centrosymmetric). This catalog assigns each altermagnetic wallpaper and space group to one of the six altermagnetic wave types established in the literature and presents its distinct spin distribution in the Brillouin zone (BZ); notably, the low-energy wave-type description does not necessarily extend throughout the full BZ, since the spin-degenerate nodal lines and planes can be unpinned from the high-symmetry planes. Beyond the catalog, nonsymmorphic symmetries further bring new patterns of the altermagnetic BZs through the emergence of hourglass dispersions, which arise from the compatibility relations between two symmetry-protected degenerate manifolds: same-spin and opposite-spin degeneracies. In both the non-centrosymmetric altermagnetism and the emergence of the hourglass dispersion, the spinless time-reversal symmetry plays the key role. Our work extends the symmetry catalog of altermagnetism and reveals that nonsymmorphic symmetries are essential for realizing altermagnetic band structures beyond the six established wave types, such as an $i$-wave-like spin winding in a tetragonal BZ.
Read the full abstract

All authors Congcong Le, Fan Cui, Iao-Fai Io, Moritz Hirschmann, Xianxin Wu, Ching-Kai Chiu

Materials Science

Spinel Ferrite-Based Materials for Electrochemical Applications: Synthesis, Applications, and Future Perspectives

Spinel ferrites have shown wide range of applications in various fields, including supercapacitors, Li-ion batteries, water splitting, chemical sensors, catalytic activity, high-frequency magnetic devices, and biomedical, hyperthermia, drug delivery applications., etc. This review focuses on the latest progress and trends on design of spinel ferrites (MFe2O4; M = Divalent transition metal ion) based materials for electrochemical applications. Spinel ferrites exhibit good chemical stability, high surface area and excellent electrochemical behaviour with their multiple oxidation states, making them suitable for the detection of a wide range of gaseous analytes including volatile organic compounds, heavy metal ions, biomolecules, and environmental pollutants. It also makes spinel ferrites a great choice for efficient energy storage and utility in supercapacitors. The electrochemical performance of spinel ferrite-based electrode materials can be effectively tuned via morphology control, incorporation of carbon-based materials, compositional substitution, doping and forming composition systems, especially in nanostructured form. This review will serve as a comprehensive resource for researchers interested in the synthesis and various enhancement techniques for electrode material composition of electrochemical device applications specifically, gas sensors and supercapacitors, which are two of the highest emerging functional applications for the new sustainability directed world, utilizing these advanced materials.
Read the full abstract

All authors Sakhi Tiwari, Ashish Dubey, Pragyanand Prajapati, Akhilesh Kumar Singh, Ashutosh Kumar, Jai Singh

Materials Science · Cross-listed from physics.optics

Three-dimensional excitonic dipole anisotropy enables ultrabroadband polarization photodetection in CrCl3

Simultaneous detection of the spectral and polarization properties of light is highly desirable for integrated imaging and photonic technologies but typically requires complex multi-component architectures. Here, we demonstrate that the intrinsic dielectric anisotropy of layered insulating CrCl3 enables ultrabroadband polarization-resolved photodetection spanning wavelengths from 300 to 1700 nm. The photoresponse is governed by long-lived ligand-field excitons, whose microsecond-scale lifetime produces a photoconductive gain exceeding 4.5 x 10^4. By combining wavelength-, polarization-, and angle-resolved optoelectronic measurements, we reveal that distinct ligand-field and higher-energy excitonic transitions possess different optical dipole orientations, leading to excitation-energy-dependent rotation of the in-plane polarization axis. Furthermore, oblique illumination activates out-of-plane optical dipoles, while competing excitonic transitions with distinct dipole orientations drive wavelength-dependent rotation and reversal of the polarization anisotropy. Together, these effects produce a highly tunable degree of polarization ranging from -90% to +75%, establishing intrinsic three-dimensional vectorial light-matter interactions in a layered magnetic van der Waals insulator. These findings establish dielectric anisotropy and excitonic dipole engineering as powerful design principles for compact ultrabroadband polarization-sensitive photodetectors and multifunctional van der Waals photonic systems.
Read the full abstract

All authors Satyam Sahu, Jaganandha Panda, Martin Jindra, Mukesh Kumar Thakur, Farjana J. Sonia, Shankar Khanal, Kornelius Nielsch, Jana Vejpravova, Matěj Velický, Martin Kalbáč, Otakar Frank, Golam Haider

Materials Science · Cross-listed from cond-mat.supr-con

Soft point-contact Andreev reflection spectroscopy in a palm-type cubic anvil-pressure cell

We have implemented soft point-contact Andreev reflection spectroscopy (PCARS) in a palm-type cubic anvil pressure cell by combining a substrate anchoring strategy with an external wire-splitting technique. This design enables the stable formation of multiple point contact junctions under hydrostatic pressures up to 15 GPa. Benchmark measurements on the elemental superconductor Nb demonstrate high reproducibility and yield a zero-temperature superconducting gap with a gap ratio of 3.3. We further apply this technique to the Kagome metal superconductor CsCr3Sb5 and the bilayer nickelate superconductor La2PrNi2O7. Pronounced zero-bias conductance peaks are observed, and their evolution with temperature, magnetic field and applied pressure is investigated, together with the superconducting gap magnitude and possible pairing symmetries. These measurements provide spectroscopic evidence consistent with unconventional superconductivity in these materials. Our work establishes a robust experimental platform that bridges macroscopic electrical transport and microscopic spectroscopic probes, opening a new avenue for investigating pairing symmetry in a wide range of pressure-induced unconventional superconductors.
Read the full abstract

All authors Qingxin Dong, Fengrui Shi, Yan Zhang, Tong Shi, Yi Liu, Shaoheng Ruan, Zhongjin Wu, Jianping Sun, Zhaoming Tian, Yoshiya Uwatoko, Guanghan Cao, Xin Lu, Bosen Wang, Jin-Guang Cheng

Materials Science · Cross-listed from cs.CV

Answer-Conditioned Chain-of-Thought Distillation for Few-Shot Industrial Vision with Small VLMs

Deploying AI-based visual inspection in manufacturing is hard because requirements change often, new defect types appear, and large labeled datasets are rarely available. We propose answer-conditioned chain-of-thought (CoT) distillation for rapidly adapting small vision-language models (VLMs) to new industrial tasks using minimal labeled data. A frontier VLM receives each training image along with its correct label and generates a justified visual explanation. A 3B-parameter model is then fine-tuned on these reasoning-augmented examples via LoRA. By conditioning on correct answers, we ensure all training reasoning is directed toward the correct conclusion, which is critical because frontier models score as low as 24.1% on our hardest task. We validate on four industrial classification tasks spanning three image modalities using only 18 to 30 labeled images per task. Across 4 seeds per task (32 training runs), our method outperforms direct fine-tuning on all 16 seed-task combinations, with mean improvements of +1.7 to +4.4 percentage points. A controlled equal-budget experiment confirms the improvement comes from reasoning quality, not additional training steps. An unconditioned baseline demonstrates that with out answer-conditioning, wrong reasoning degrades performance by 17.8 percentage points. On weld radiograph classification, the fine-tuned 3B model outperforms GPT-4.1 by 10.0pp using just 24 training images.
Read the full abstract

Materials Science · Cross-listed from stat.ML

Edge Cluster Expansion with Radial Rotary Attention for Interatomic Potentials

In this paper, we provide a systematic investigation of SO(2) theory to machine learning interatomic potentials (MLIPs) and identify the limitations of conventional SO(2) Linear architectures relative to SO(3) Clebsch-Gordan Tensor Products (CGTP). Building on these insights, we propose direct Cartesian construction and recursive Clebsch-Gordan construction of Wigner D-matrices and introduce two novel interaction building blocks. First, we propose the Edge Complex Product Basis based on Generalized Asymmetric Contraction, a new formulation for many-body expansion that directly constructs higher-order interactions on edges through complex-valued equivariant multiplications. Second, we introduce Radial Rotary Complex Attention(RRA), which enhances extrapolation performance and surpasses existing attention vector formulations. We also introduce several improvements to the Atomic Cluster Expansion module. Building on these advances, we train our models on OMat24, sAlex, and MPTrj, and introduce TECE-OAM-RRA-1.0, which achieve state-of-the-art (SOTA) performance on the Matbench Discovery.
Read the full abstract

Materials Science

Nonlinear Tellegen limit

The Tellegen limit is the fundamental electromagnetic stability bound on magnetoelectric media. We show that nonlinear magnetoelectric coupling gives rise to a new Tellegen limit, which we term the nonlinear Tellegen limit. Unlike the linear Tellegen limit, which is fixed by material parameters, the nonlinear Tellegen limit is field-tunable – a static electric or magnetic field drives the system toward electromagnetic instability at a material-specific critical field determined by the symmetry-allowed nonlinear magnetoelectric couplings and electromagnetic response. The approach to this limit is accompanied by a field-tunable linear birefringence, whose maximum is bounded by the nonlinear Tellegen limit – beyond which the medium becomes electromagnetically unstable. We demonstrate the nonlinear Tellegen limit and the field-space stability phase diagram in two magnetically ordered material systems – a $d$-wave altermagnet and an M-type hexagonal ferrite – showing that the symmetry of the magnetic point group governs both the structure of the nonlinear magnetoelectric tensor and the resulting electromagnetic instability.
Read the full abstract

Materials Science

Surface Variables Description of Axion Topological Materials

We study the response of axion topological materials under the presence of external static electric and magnetic fields. We focus on the macroscopic quasi-static magnetoelectric response of topological insulators. We use techniques based on surface variables that have been previously employed in soft condensed matter problems for the description of heterogeneous systems composed of multiple homogeneous materials. A complete description of the whole system is written in terms of surface degrees of freedom, which in this case correspond to effective surface charge and surface current densities. We obtain a set of integral equations satisfied by these variables. We present exact analytic solutions for axial-symmetric cases. We develop a numerical method for the solution of the integral equations by means of a boundary finite element method. We apply the numerical method to topological insulators with different geometries such as spheres, hollow spheres and toroidal surfaces. We show that that a variational principle can be used to recover the surface variables equations.
Read the full abstract

Saturday 11 July

Materials Science · Cross-listed from cond-mat.mes-hall

Nonperturbative magnetotransport from band geometry in Weyl semimetals

We develop a nonperturbative semiclassical theory of magnetotransport in Weyl semimetals, retaining the full magnetic-field dependence of the Fermi-surface conductivity in the presence of Berry curvature and orbital magnetic moment effects. We obtain closed-form expressions valid to all orders in the magnetic field within the semiclassical regime. We show that the exact continuum formulation exhibits an intrinsic infrared sensitivity associated with the singular behavior of the orbital magnetic moment, requiring a physically motivated regularization. While the full conductivity tensor reduces to the standard quadratic magnetoconductivity, we demonstrate that magnetic-field expansion and momentum integration do not commute, leading to nonanalytic contributions at the level of scalar transport coefficients. Our results identify a regime, relevant for low carrier densities or moderate magnetic fields, where magnetotransport becomes intrinsically nonperturbative and cannot be captured by conventional weak-field expansions.
Read the full abstract

Materials Science

Chiral, Electronically Decoupled Layers of 1T'-WS2 Topological Insulator via Neutral-Molecule Intercalation

Monolayer 1T'-WS2 is predicted to be a two-dimensional topological insulator, but its intrinsic electronic properties are masked by strong interlayer coupling in its metallic and superconducting bulk parent phase, 2M-WS2. Isolating monolayers by mechanical exfoliation is also hindered by this coupling, preventing experimental examination of monolayer properties. Here we show that 2M-WS2 undergoes amine intercalation through a simple wet-chemical reaction, yielding superlattices in which the 1T' layers are structurally preserved but electronically decoupled by neutral molecular spacers. Intercalation expands the interlayer spacing from 0.5 to 1-4 nm and reconstructs the stacking while preserving the intralayer 1T' framework. Controlled (de)intercalation reversibly switches the system between a superconducting metal and an insulator with an activation gap matching that of the isolated monolayer. Density functional theory indicates that the electronically decoupled layers retain the nontrivial Z2 topology of the monolayer. Chiral amine intercalation further induces chiroptical activity in WS2 electronic transitions. Overall, the successful intercalation challenges the long-held view that group VIB dichalcogenides are inert toward neutral-molecule intercalation and demonstrates molecular intercalation as a general chemical route for realizing monolayer-like topological-insulator physics and enabling chiral van der Waals superlattices in bulk single crystals.
Read the full abstract

All authors Jiaze Xie, Fatmagül Katmer, Fang Yuan, Jaime M. Moya, Guangming Cheng, Connor J. Pollak, Xiaoyu Song, Nirmal Roy, Yakov Bloch, Moshe Ben Shalom, Jennifer Cano, Leslie M. Schoop

Materials Science

Connecting Diffuse Scattering to Atomic-Site-Resolved Occupancy and Displacement Fields through Fourier Filtering

Local structural correlations are encoded in diffuse scattering, but identifying atomic motifs that produce specific diffuse features can be challenging. We introduce MOSAIC, a computational framework for this task when an atomistic configuration is available and a phase-bearing scattering amplitude can be calculated. Our approach relies on applying the Fourier filter to this amplitude over the reciprocal-space regions encompassing the scattering features of interest to obtain maps of atomic displacements and site occupancies responsible for those features. The method is effective in interrogating the nature and spatial distributions of interatomic correlations in large-scale structural models, such as obtained using Reverse Monte Carlo refinements from experimental data, molecular dynamics, or Monte Carlo simulations, or 2D structural projections derived from atomic-resolution electron microscopy images.
Read the full abstract

All authors Maksim Eremenko, Victor Krayzman, Matthew G. Tucker, Igor Levin

Materials Science · Cross-listed from cs.CE

Data-efficient continuous conditional denoising diffusion model for microstructure generation

Traditional computational models, such as cellular automata and phase-field methods, are effective for simulating microstructural evolution but often face computational bottlenecks, limiting their application in high-throughput and on-demand process optimization. Generative machine learning approaches, such as denoising diffusion models, have emerged as powerful tools for surrogate modeling of process-structure maps, specifically producing representative microstructures conditioned on process parameters. However, they often require large amounts of data for training, particularly when process conditions are continuous rather than discrete categorical variables. To address this, we present a continuous conditional denoising diffusion model for generating microstructures conditioned on processing parameters. Trained on a compact dataset of process-microstructure pairs, this framework first adds noise to microstructure images and then trains a neural network to progressively remove the noise, learning the underlying statistical patterns of the microstructure. To address data inefficiencies associated with continuously valued process conditions, we propose a vicinal-loss training strategy that associates process conditions in data-sparse regions with nearby conditions in the dataset. Combined with classifier-free guidance and denoising diffusion implicit sampling, this approach enables data-efficient continuous conditional generation of microstructures compared to classical denoising diffusion models. The model successfully generates representative microstructures for low-carbon steel conditioned on manganese composition, matching key physical features such as phase and grain morphology, grain size distribution, phase fraction, and interfacial area distribution. More generally, this approach opens avenues for efficient process design and optimization of materials and their microstructures.
Read the full abstract

All authors Tarakram Ramgopal, Gowtham Nimmal Haribabu, Hussein Farahani, Cornelis Bos, Siddhant Kumar