Materials Science · Cross-listed from quant-ph
On multipoles, their decomposition by time-reversal symmetry, and the electric toroidal monopole
Vinzenz A. Müller, Nora Taufertshöfer and Nicola A. Spaldin
The multipole decomposition of the single-site density
matrix provides a
symmetry-adapted representation of local electronic degrees of freedom. Conventional, so-called fixed-shell, formulations do not span the full local single-particle operator space, as only operators mapping within the same orbital $l$ are resolved. Here we construct a complete orthogonal basis of real Hermitian multipole operators for the local density
matrix by extending the existing formulation to inter-shell operators. We revisit the multipole decomposition as a decomposition of the operator space by $\mathrm{SO}(3)$ by first decomposing the orbital and
spin operator spaces. Then by coupling them we arrive at the
spin-$\frac{1}{2}$ local single-particle operator space, staying consistent with the existing fixed-shell formulations. We then classify the multipoles by parity and time-reversal
symmetry, which allows for unique identification of multipole moments of the density
matrix that contribute to expectation values of fully
symmetry-resolved observables. As an application, we analyze the two enantiomers of
chiral trigonal tellurium by computing the electric toroidal monopole moment selected by
symmetry.
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Materials Science
Beyond the Parasitic Limit: A Nanoprobing Framework for De-embedding Intrinsic Ferroelectric Properties at the Deep Sub-Micrometer Scale
Niklas Kyoushi, Georg Schönweger, Ole Gronenberg et al. (+4 more)
The continued scaling of ferroelectric devices is critical for next-generation computing architectures, yet it is fundamentally challenged by a metrological bottleneck: at the deep sub-micrometer scale, intrinsic material properties are heavily masked by extrinsic parasitic impedances and
geometric fringing fields. Here, we introduce a quantitative, in-situ nanoprobing framework capable of resolving the true electrical response of ferroelectric capacitors down to 165 nm in diameter without the need for lithographic bond pads. Using 20 nm thick AlScN as a model system, we establish a non-linear 'Screened Power Law' model to decouple attofarad-level device capacitances from massive near-field probe interactions. Furthermore, we demonstrate that the apparent degradation of dielectric loss at the nanoscale is a
geometric dilution artifact, which we overcome through a conductance scaling analysis. Finally, we apply this framework to large-signal characterization, utilizing leakage-compensation and noise filtering protocols to extract pristine intrinsic hysteresis (C-V and J-E) loops in the discrete few-grain limit. These findings provide a universal analytical toolkit required to overcome the measurement limits of deep-submicron ferroelectrics.
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All authors Niklas Kyoushi, Georg Schönweger, Ole Gronenberg, Dirk Meyners, Adrian Petraru, Fabian Lofink, Simon Fichtner
Materials Science
Physics adapted generative AI for metal insulator transition materials under label scarcity
Gourab Datta, Sarah Sharif, Zhisheng Shi et al. (+1 more)
Metal-
insulator-transition (MIT) materials are promising candidates for switchable electronics, neuromorphic hardware, and reconfigurable photonics, yet experimentally verified examples remain limited and the underlying mechanisms are often complex. We argue that generative AI for MIT discovery should move beyond the search for stable
crystal structures alone and instead prioritize mechanism-informed phase-transition hypotheses. A modular physics-adapted framework, combined with staged verification of phase competition, electronic contrast, transition-pathway plausibility, and control accessibility, can guide credible discovery under severe label scarcity.
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All authors Gourab Datta, Sarah Sharif, Zhisheng Shi, Yaser Banad
Materials Science
From Stacking Disorder to Cubic Order: Ice Crystallization from Deeply Supercooled Water
Yulin Lin, Weimin Guo, Suvo Banik et al. (+9 more)
Crystallization far from
equilibrium can generate morphologies that defy classical
crystal habits, yet the microscopic mechanisms linking atomic-scale disorder to emergent macroscopic order remain elusive. Here we use in situ cryogenic transmission electron microscopy with a membrane-encapsulated microdroplet platform to directly visualize the freezing of deeply supercooled water at molecular resolution. We show that homogeneous nucleation produces stacking-disordered ice composed of mixed hexagonal and cubic sequences, in which cubic ice initially exists only as isolated monolayers. The gradual thickening of these cubic layers constitutes the key kinetic mechanism that governs the entire crystallization pathway. As thickening proceeds, nanoscale, defect-free cubic ice germs nucleate on the basal planes of the disordered
lattice. These faceted cubic germs act as facet-registered kinetic seeds that enforce cubic twinning and sequentially multiply growth branches. This kinetic pathway reproducibly generates robust eight-branched dendrites with global cubic (octahedral)
symmetry, even though each branch remains highly stacking-disordered. At later stages, latent heat release drives a crossover to the thermodynamically favored hexagonal phase; remarkably, the pre-established global cubic
symmetry is retained. These results reveal how strong kinetic driving forces convert microscopic disorder into emergent macroscopic
symmetry, providing a general framework for understanding and controlling rapid crystallization far from
equilibrium.
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All authors Yulin Lin, Weimin Guo, Suvo Banik, Tao Zhou, Thomas E. Gage, Lei Yu, Maksim A. Sultanov, Martin Holt, Subramanian Sankaranarayanan, Peng Zhang, Ilke Arslan, Jianguo Wen
Materials Science
Dyna-Mat: End-to-end benchmarking of foundation machine learning interatomic potentials in finite-temperature ensembles
Mikołaj J. Gawkowski, Nongnuch Artrith, Silvia Bonfanti et al. (+14 more)
Foundation machine learning interatomic potentials (MLIPs) are increasingly being used as drop-in replacements for first-principles calculations, enabling simulations of materials at length and time scales that were previously inaccessible. However, due to lack of ground truth data, their accuracy on structural and dynamical observables in finite thermodynamic ensembles is yet to be established. Here, we introduce Dyna-Mat-v1.0, a
benchmark dataset of condensed-phase first-principles molecular dynamics trajectories designed to test foundation MLIPs at realistic finite-temperature conditions. Using this
dataset, we evaluate 15 foundation MLIPs across four model tiers by comparing both single-point energy and force errors on first-principles configurations and observables generated from MLIP-driven trajectories. We find that "on average" models with lower single-point force errors also yield lower errors for structural and dynamical observables. However, there are individual systems for which low force errors lead to qualitative failures in the predicted structure. Pressure remains poorly described across most models, pointing to limitations in the density functional theory stress labels available in current large-scale training
datasets. Finally, we construct an accuracy-cost Pareto frontier to identify the best trade-offs for molecular dynamics with foundation MLIPs, finding that the latest generation of cross-trained models is close to Pareto-optimal according to the accuracy metrics considered here. Overall, Dyna-Mat-v1.0 shows that end-to-end finite-temperature validation is essential for quantifying the predictive behaviour of foundation MLIPs, and provides a simple, scalable route for assessing them beyond static and harmonic
benchmarks relevant to materials design.
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All authors Mikołaj J. Gawkowski, Nongnuch Artrith, Silvia Bonfanti, Abhijeet Sadashiv Gangan, Hendrik H. Heenen, Joseph Kioseoglou, Ivor Lončarić, Hemanadhan Myneni, Janosh Riebesell, Mariana Rossi, Matthias Rupp, Jonathan Schmidt, Shubham Sharma, Benjamin X. Shi, Antoni Wadowski, Lukas Hörmann, Venkat Kapil
Materials Science · Cross-listed from cond-mat.mes-hall
Evidence of length scale effect in contact electrification in conducting thin film heterostructures
Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha et al. (+2 more)
Contact electrification between two conducting materials is expected to exhibit length scale effect because the screening effect will diminish in conductors as a function of material dimensions. As a consequence, the interfacial charge accumulation will diffuse away from interface/surface to a critical penetration depth as a function of material dimension. This work experimentally demonstrates the length scale effect in a permalloy and degenerately doped p-Si
heterostructure system due to the flexoelectricity mediated contact electrification. The contact electrification induced interlayer charge transfer is observed through the whole thickness in case of 400 nm thick p-Si samples. Whereas, the charge carrier diffuses to a depth of 51 nm from the interface in case of 2 um thick Si. The length scale effect also leads to metal-
insulator transition in p-Si layers in both cases. These results present a new opportunity to tailor the physical properties in conducting materials using contact electrification.
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All authors Paul C. Lou, Ravindra G. Bhardwaj, Anand Katailiha, W.P. Beyermann, Sandeep Kumar
Materials Science · Cross-listed from physics.chem-ph
Improving Jet A-1 Thermal-Oxidative Stability through Selective Removal of Unwanted Trace Species via 3.7 Å Chabazite Filtration
Morteza Roostaeinia, Ehsan Alborzi, Xue Yong et al. (+2 more)
The thermal stability of Jet A-1 fuel is strongly affected by trace heteroatomic species that promote thermal oxidative deposit formation, as well as antioxidant additives such as butylated hydroxytoluene, which preserve fuel stability. 3.7 Å chabazite is a tunable microporous adsorbent, but optimizing its composition requires balancing promoter removal against antioxidant loss. Here, we use density functional theory and ab initio molecular dynamics (AIMD) to evaluate this trade-off using two compositional descriptors: framework acidity (Si/Al $= 35$–$8$) and bimetallic substitution (Co, Mg, Zn) at fixed Al content. Lowering Si/Al strengthens adsorption of all species, including BHT, confirming an intrinsic selectivity penalty for acidity-only tuning. In contrast, bimetallic substitution introduces chemically selective behavior, strengthening uptake of specific promoters while either suppressing or enhancing antioxidant adsorption depending on dopant identity. AIMD simulations at 400 K further show that adsorption energy alone is insufficient to describe calculated trends, because molecular mobility inside chabazite can influence residence time and effective capture during fuel treatment. Analysis of the density of states and the participating wavefunctions reveals signatures that are consistent with dopant-dependent adsorption shifts. These results establish a unified adsorption–transport–electronic screening framework for selecting chabazite compositions that remove deposit promoters while preserving antioxidant functionality in Jet A-1 treatment.
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All authors Morteza Roostaeinia, Ehsan Alborzi, Xue Yong, Kyungwha Park, Vsevolod Ivanov
Materials Science
Computational Determination of Optimal Growth Protocols for Metastable Polymorphs
Simon B. Hollweger, Anna Werkovits, Tadeas Lesovsky et al. (+1 more)
The reliable growth of a desired target structure remains a central challenge for organic-inorganic interfaces. Specific interface structures can exhibit properties that are superior compared to those of other possible interface structures, but identifying growth conditions that selectively produce a given surface structure is difficult, particularly when the target structure is thermodynamically metastable. Here, we demonstrate how time-dependent temperature and pressure protocols can be optimized to promote the high-yield formation of a metastable surface polymorph. To this end, we combine kinetic Monte Carlo simulations with a parameterized nucleation-and-growth model and apply optimal control theory to predict growth recipes that maximize the yield of the desired target structure. Applying this approach to a prototypical model of an organic molecules adsorbed on a metal surface, we identify experimentally plausible protocols that guide the system through phase space while avoiding kinetic growth regimes in which formation of the thermodynamically stable structure is favored. Compared to a manually optimized three-step protocol, the optimized control trajectory increases the yield of the desired metastable phase from 73 % to 97 % for the same total protocol duration.
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All authors Simon B. Hollweger, Anna Werkovits, Tadeas Lesovsky, Oliver T. Hofmann
Materials Science · Cross-listed from cond-mat.str-el
What Makes Three-Dimensional Quantum Spin Liquids Possible?
Yasir Iqbal and Ronny Thomale
Quantum spin liquids are often introduced through a low-dimensional intuition: weak coordination and strong zero-point motion frustrate conventional
magnetic order. This view has shaped much of the field, but it misses another route to
quantum disorder. In many frustrated magnets, the more natural starting point is not a fluctuating version of an ordered state, but a locally constrained
manifold of low-energy configurations. Within such a
manifold,
quantum dynamics can generate an emergent gauge theory, with fractionalized excitations and collective modes absent in ordinary magnets. Here we ask why such phases can be stable in three spatial dimensions. We argue that three-dimensional
quantum spin liquids need not be regarded as fragile exceptions to the tendency of 3D magnets to order. They can arise when local constraints suppress premature order selection, coherent tunneling processes connect the constrained
manifold, and the
topology of gauge defects permits a deconfined regime. For compact gauge theories, three dimensions can even reverse the usual dimensional intuition: regimes that are unstable or fine-tuned in lower dimensions may become stable over finite regions of parameter space. We organize the discussion around constraint-driven Coulomb phases, weak harmonic order-by-disorder selection, and the role of
spin-orbit or multipolar interactions in generating the required microscopic dynamics. We close with experimental diagnostics, candidate materials, and open theoretical questions for three-dimensional
quantum spin liquids
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Materials Science
Color Centers in Cubic Boron Nitride
William Stenlund, Joel Davidsson, Viktor Ivády et al. (+2 more)
Cubic boron nitride (c-BN) is a wide-bandgap
semiconductor (WBGS) with potential applications in both power electronics and
quantum technologies. Color centers in WBGS can be used as single
photon emitters and
quantum sensors. Several zero
phonon lines have been measured in c-BN experiment but not yet identified. To systematically probe the combinatorially complex chemical space of defects, we generate a large-scale point defect data set for c-BN. We apply density functional theory calculation implemented in a high-throughput workflow Automatic Defect Analysis and Qualification (ADAQ) to broadly screen for point defect complexes containing s- or p-elements. More than 8000 defects have been calculated in different charge and
spin states. The calculated properties are stored in defect database and are then filtered to find defects with properties similar to the NV-center in diamond. More accurate calculations using hybrid functionals are then performed on a selected set of promising defects to further assess their suitability for
quantum technology. In particular, we reexamined the ONVB defect which likely explains the GC-2 line. The hybrid calculations also suggest other defect candidates with bright emission, such as two carbon defects and the NaB- defect.
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All authors William Stenlund, Joel Davidsson, Viktor Ivády, Rickard Armiento, Igor A. Abrikosov
Materials Science
Anomalous Structural Response of Quasi-One-Dimensional Antiferromagnetic Metal KMn6Bi5 under high pressure
Hanming Ma, Qingxin Dong, Tong Shi et al. (+11 more)
We report high-pressure single-
crystal X-ray diffraction measurements on the quasi-one-dimensional (Q1D)
antiferromagnetic metal KMn6Bi5 up to 12.5 GPa, revealing the detailed pressure
evolution of its atomic coordination environment. We find that the
lattice exhibits pronounced anisotropic compressibility-the relative changes in the a and b
lattice parameters reach a/a0=0.91 and b/b0 = 0.94 at 12.5 GPa-and a distinct structural anomaly emerges near 11 GPa without any
symmetry-breaking. Detailed structural analysis further uncovers an anomalous hardening of the Mn nanotubes between 5 and 11 GPa, followed by a configuration optimization of the Mn/Bi nanotubes around 11 GPa. These features correlate closely with the reported pressure-temperature phase diagram of KMn6Bi5 and compare favorably with the chemical pressure effects induced by substituting K with Na, Rb, or Cs. Our findings provide key microscopic insights into how coordination environment modulation governs the stability of electronic orders in low-dimensional systems.
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All authors Hanming Ma, Qingxin Dong, Tong Shi, Xiaoli Ma, Zhongjin Wu, Shaoheng Ruan, Pengtao Yang, Zhaoming Tian, Jianping Sun, Yoshiya Uwatoko, Genfu Chen, Xiaohui Yu, Bosen Wang, Jinguang Cheng
Materials Science
Enhanced hydrogen response of copper-doped TiO$_2$ synthesised by helium-assisted magnetron sputtering
Akash Kumar, Nirmal Kumar, David Kolenatý et al. (+4 more)
Cu-doped TiO$_2$ thin films for hydrogen sensing were synthesised by reactive DC magnetron sputtering in Ar/O$_2$/He mixtures, with the He fraction used as a control parameter for film growth. By combining normal-angle deposition (NAD) and glancing-angle deposition (GLAD) with post-deposition annealing, the effects of He on microstructure formation and sensor performance were examined. X-ray diffraction and electron microscopy revealed that He promotes nanostructuring,
lattice expansion in as-deposited NAD films, increased porosity after annealing, and a stronger anatase character in the final
oxide layers. These structural changes, which enhance the reactive surface area, lead to improved hydrogen sensing at 300\,$^\circ$C in 1~vol.\,% H$_2$. The response of NAD films increased from 1.4 to 6.0 simply by replacing part of the argon with helium, whereas GLAD films showed only a modest increase. The observed nanostructuring is discussed in terms of a simulation-supported growth scenario involving energetic backscattered He, a reduced hammering effect, and cooling-related suppression of adatom mobility, which together favour the formation of a more open sensing layer. Helium-assisted sputtering represents a useful physical route for tailoring
oxide thin films for gas-sensing applications.
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All authors Akash Kumar, Nirmal Kumar, David Kolenatý, Mina Farahani, Jiří Rezek, Tomáš Kozák, Stanislav Haviar
Materials Science · Cross-listed from cond-mat.mes-hall
One-dimensional carbon nanostructures with periodic graphitic nitrogen substitution
Nicolò Bassi, Shantanu Mishra, Zheng Zhang et al. (+8 more)
Heteroatom substitution is a powerful route to tune the chemical and electronic properties of carbon nanomaterials. In particular, replacement of an sp2 hybridized carbon atom in the
graphene lattice with a nitrogen atom (denoted as graphitic nitrogen) induces substantial changes in the electronic properties. These include changes in the band structure that can influence electronic transport, and magnetism. A key requirement for applications is both the periodic and precise incorporation of the heteroatoms in extended carbon
lattices. Here, we report the on-surface synthesis and characterization of two one dimensional carbon nanostructures, a
polymer and a
graphene nanoribbon, consisting of periodically incorporated graphitic nitrogen atoms. The on-surface reactions toward formation of the nanostructures were monitored by scanning tunneling microscopy. The bond-resolved chemical structures of the reaction intermediates and products were investigated by atomic force microscopy, which enabled atomic-scale visualization of the graphitic nitrogen sites. The electronic properties of the nanostructures were studied by scanning tunneling spectroscopy and density functional theory calculations. Our analyses revealed the presence of localized nitrogen-centered electronic states. In the gas phase where the nanostructures are in a neutral charge state, these states undergo
spin polarization leading to an open-shell ground state. Upon adsorption on Au(111), the nanostructures exhibit electron transfer to the surface, which resulted in a closed-shell ground state. Our results demonstrate a straightforward and generally applicable route to synthesize graphitic nitrogen-substituted carbon nanomaterials with potential applications in spintronics, catalysis and energy storage.
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All authors Nicolò Bassi, Shantanu Mishra, Zheng Zhang, Xiao-Ye Wang, Feifei Xiang, Nils Krane, Carlo A. Pignedoli, Klaus Müllen, Pascal Ruffieux, Akimitsu Narita, Roman Fasel
Materials Science
NanoBTE: Fast Iterative Solution of the Phonon Boltzmann Transport Equation for Nanoscale Heat Transport
Hongjiang Chen, Hai-Xuan Lin, Xiaole Tian et al. (+7 more)
Nanoscale heat dissipation has become a critical challenge in advanced
semiconductor devices, where
phonon transport can strongly deviate from the classical
Fourier description due to the boundary scattering and ballistic effects. In this work, we propose NanoBTE, a deterministic finite-volume solver for the non-gray
phonon Boltzmann transport equation under the relaxation-time approximation. The solver supports complex two- and three-dimensional geometries, band-resolved
phonon properties, discrete-ordinates angular quadrature, volumetric heat generation, and multiple
phonon boundary conditions, including thermalizing, diffuse, and specular reflections. %To improve the efficiency of multiscale simulations, both sequential and synthetic iterative schemes are implemented, where the latter couples the microscopic
phonon transport equation with a macroscopic
diffusion-type temperature equation to accelerate convergence in near-diffusive regimes. Both sequential and synthetic iterative options are implemented for the steady-state solution. Furthermore, NanoBTE adopts a band-direction task decomposition strategy, enabling efficient MPI-based CPU parallelization and GPU acceleration of the dominant sparse transport operations.
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All authors Hongjiang Chen, Hai-Xuan Lin, Xiaole Tian, Hongyu Chen, Juan Zhang, Shengyao Yan, Hezhu Shao, Yu Wu, Junjie Liu, Hao Zhang
Materials Science
Data-driven multi-objective optimization for alloy recycling using factorization machines and quantum annealing
Thomas Plehn, Katrin Bugelnig, Silvana Tumminello et al. (+2 more)
Quantum annealing has the potential to provide practical
quantum advantage for complex optimization tasks. Here, we present a systematic assessment of an integrated factorization-machine and
quantum-annealing workflow (FM+QA) for a technologically relevant application: multi-objective Pareto optimization in metal up-cycling through
alloy design. To address the non-convex nature of the Pareto front, we employ the recently proposed data-driven Tchebycheff scalarization (DDTS) scheme. Our results show that FM+QA extends the applicability of QUBO-based optimization to data-driven materials discovery problems with multiple competing objectives. In particular, we analyze the scaling behavior of the approach and compare
quantum annealing with classical simulated annealing using both regular binary encoding and one-hot encoding. Finally, we provide a critical perspective on the problem sizes and encoding strategies for which
quantum-annealing-based optimization may become practically beneficial in the near future.
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All authors Thomas Plehn, Katrin Bugelnig, Silvana Tumminello, Daniel Barragan-Yani, David Melching
Materials Science
Martensitic Transformation in Crystal-Amorphous Superlattices of NiTi Shape Memory Alloy
Bhavna Singh and Shivam Tripathi
Shape
memory alloys (SMAs) exhibit unique thermo-mechanical properties arising from reversible martensitic transformation. Tailoring these properties through coherent second phases is effective but is often limited by the difficulty of identifying thermodynamically compatible phases.
Crystal-amorphous superlattices (CAS), in which the second phase is derived from the base material itself, provide an attractive alternative. However, the influence of partial amorphization on martensitic transformation and thermo-mechanical behavior remains largely unexplored. Here, large-scale molecular dynamics simulations are used to investigate temperature- and stress-induced martensitic transformations in CAS-NiTi with different crystalline phase fractions. Partial amorphization fundamentally modifies the transformation pathway, introducing an initial continuous (second-order-like) transformation before the conventional first-order martensitic transformation. The amorphous phase also enhances transformation reversibility, reducing the thermal hysteresis from 275 K in fully crystalline NiTi to 95-110 K in CAS-NiTi. Simultaneously, the elastic modulus and the critical stress for stress-induced martensitic transformation increase by approximately 60-90 percent, depending on the crystalline fraction. These improvements originate from heterogeneous nucleation at
crystal-amorphous interfaces, retained austenite that promotes the reverse transformation, and mechanical constraint imposed by the amorphous phase. These findings establish
crystal-amorphous superlattices as a promising microstructural design strategy for tailoring the thermo-mechanical performance of shape
memory alloys.
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Materials Science · Cross-listed from cond-mat.mes-hall
Comparative Evaluation of Encapsulation Methods for Endohedral Doping of Single-Wall Carbon Nanotubes
Cristian M. Borja-Peña, Martin Magg, Hussein Slim et al. (+10 more)
Single wall carbon nanotubes (SWCNTs) are promising building blocks for nanoelectronic and optoelectronic devices, yet reliable and stable doping, particularly n type, remains challenging due to strong environmental sensitivity and competing extrinsic effects. Encapsulation of charge transfer molecules within the SWCNT cavity offers a promising route to stable doping while preserving the nanotubes outer surface for subsequent processing. Here, we systematically investigate the filling of arc discharge SWCNTs with the electron donor tetrathiafulvalene and electron acceptor tetracyanoquinodimethane, comparing different methods for filling, including melt filling, solution reflux, and
vacuum phase sublimation. We follow the entire processing workflow from raw, unfilled powders to aqueous dispersions and employ density gradient ultracentrifugation to separate filled from empty nanotubes as well as metallic from semiconducting ones. Encapsulation efficiency and electronic modification are assessed using absorption spectroscopy, resonant Raman scattering, thermogravimetric analysis, X-ray photoelectron spectroscopy and electron paramagnetic resonance. Finally, we introduce a complementary
vacuum-phase method that removes externally adsorbed molecules without extensive solvent washing, enabling cleaner encapsulated systems.
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All authors Cristian M. Borja-Peña, Martin Magg, Hussein Slim, Yamaldi M. Bakary, Timm Swoboda, Cedric Desroches, Denys Kurylo, Kazuhiro Yanagi, Marianna Sledzinska, Benjamin S. Flavel, Salomé Forel, Wim Wenseleers, Sofie Cambré
Materials Science
Self-Driven Atomic Dispersion in Graphitic Layers
Zhaoxi Chen, Yulu He, Zhuoran Yao et al. (+9 more)
Carbon-supported single-atom catalysts maximize metal utilization, but how metal nanoparticles transform into isolated atoms within carbon remains unclear. We show that metal nanoparticles can undergo a self-driven dispersion process under hydrocarbon oxidation conditions, transforming into single atoms that are confined in carbon
matrix. Using Pt-catalysed hydrocarbon oxidation as a model, we combine operando electron microscopy, near-ambient-pressure X-ray photoelectron spectroscopy and mass spectrometry to track coupled structural and chemical
evolution. Graphitic carbon grows at step edges of Pt nanoparticle, continuously reconstructing Pt surface and generating undercoordinated sites for atom release. In-situ generated CO accumulates at the metal-carbon interface, weakening bonding and facilitating self-amplified atom release and migration. Defective carbon overlayers then trap, stabilize and transport liberated atoms, while oxidative etching preserves interfacial access of reaction-gas. Similar behaviour across other metals suggests a general atomization pathway for single-atom catalyst synthesis, yielding products with electrocatalytic hydrogen production activity beyond standard commercial
benchmarks.
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All authors Zhaoxi Chen, Yulu He, Zhuoran Yao, Jian Liu, Jun Cai, Ziyi Fan, Wenjun Zhang, Lei Lei, Zupeng Chen, Bo Yang, Zhi Liu, Zhu-Jun Wang
Materials Science · Cross-listed from cond-mat.mes-hall
Substrate-Mediated Persistent Photodoping in WSe2/hBN Field-Effect Transistors Enabled by Defect States in SiO2
Sung-Ha Kim, Seong-Yeon Lee, Tae-Jeong Kim et al. (+6 more)
Photodoping plays an important role in determining the optoelectronic response of two-dimensional
semiconductor devices; however, the origin of the responsible trap states remains unclear. In this work, we investigate UV-induced photodoping in multilayer WSe2 field-effect transistors (FETs) based on WSe2/hBN
heterostructures on SiO2/p-Si substrates. Wavelength-dependent measurements reveal pronounced n-type photodoping under 405 nm illumination, whereas the effect is orders of magnitude weaker under 640 nm excitation and for p-type photodoping. Furthermore, when the SiO2 layer is removed, both n-type and p-type photodoping are strongly suppressed, demonstrating that the
oxide layer is essential for persistent photodoping. Analysis of defect-state distributions in amorphous SiO2, together with first-principles calculations for hBN defects, shows that the experimental observations cannot be explained by defects in hBN. Instead, the results indicate that defect states in the SiO2 substrate act as charge reservoirs that facilitate charge transfer and long-term carrier trapping. These findings highlight the dominant role of substrate-related trap states in UV-induced photodoping and photogating behavior in WSe2 FET devices.
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All authors Sung-Ha Kim, Seong-Yeon Lee, Tae-Jeong Kim, Beomkyu Shin, Young-Jun Yu, Kenji Watanabe, Takashi Taniguchi, Soungmin Bae, Ki-Ju Yee