Materials Science
The impact of interfacial chemistry on the band offset of GaAs/Ga$_2$O$_3$ heterostructures
Sofia Apergi, Alfredo Pasquarello, Charles Cornet et al. (+1 more)
Ga$_2$O$_3$/GaAs heterojunctions are emerging as promising candidates for next-generation power electronics, photonics, and energy devices, leveraging the high breakdown voltage and thermal stability of Ga$_2$O$_3$ alongside the mature technology, high hole mobility, and higher refractive index of GaAs. The efficiency of these devices depends strongly on the band
alignment between the two materials, however both type-I and type-II
alignment have been reported in the literature for these
heterostructures. To address this ambiguity, we use hybrid density functional theory to systematically investigate the band
alignment at GaAs/Ga$_2$O$_3$ interfaces, focusing on the role of interface chemistry. By considering Ga-O-, As-, and As-O-rich interfaces both in amorphous and crystalline Ga$_2$O$_3$ phases, we demonstrate that interface stoichiometry determines the
alignment type: Ga-O-rich interfaces exhibit type-II
alignment with large valence band offsets (~3.1 eV), while As-rich and As-O-rich interfaces favor type-I
alignment with reduced offsets (~2.3-2.6 eV). These trends are attributed to interface dipole formation driven by bonding configuration. Our findings provide insight into the relationship between chemistry and band
alignment in GaAs/Ga$_2$O$_3$
heterostructures, enabling targeted optimization for specific device applications.
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All authors Sofia Apergi, Alfredo Pasquarello, Charles Cornet, Laurent Pedesseau
Mesoscale and Nanoscale Physics
Correlation enhanced resistance hysteresis near half filling in MoS2/WSe2 heterobilayer
Yong Chen, Weikang Zhang, Meizhen Huang et al. (+11 more)
Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric
lattices, enabling applications in
memory devices and sensors. Recent advances in two-dimensional materials and van der Waals
heterostructures have revealed novel ferroelectric phenomena, including sliding ferroelectricity and correlation-driven ferroelectricity in moire superlattices. In this work, we fabricate and study a MoS2/WSe2 moire superlattice device exhibiting a high field-effect mobility of 17,650 $cm^2V^{-1}s^{-1}$. Electrical transport measurements reveal correlated insulating states accompanied by a prominent and reproducible resistance hysteresis near half filling. Temperature and displacement field dependence further confirms the correlation-enhanced nature of the hysteresis. Our analysis suggests that displacement field-induced metal-to-
insulator transition at correlated insulating state coupled with interfacial dipoles enables the observed resistance hysteresis. These results establish correlation enhanced resistance hysteresis near half filling in a MoS2/WSe2 heterobilayer, offering opportunities for exploring emergent
quantum phases and device functionalities.
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All authors Yong Chen, Weikang Zhang, Meizhen Huang, Shengling Xiang, Zishu Zhou, Yaqi Ma, Chenxuan Lou, Haoxi Ji, Aoqian Zhang, Yifei Jin, Liheng An, Zefei Wu, Chun Cheng, Ning Wang
Mesoscale and Nanoscale Physics
Strain-Induced Tuning of Third-Harmonic Generation in Monolayer Black Phosphorene
Yan Meng, Kainan Chang, Wei Song et al. (+3 more)
Based on the tight-binding model and the
semiconductor Bloch equations, this work systematically reveals the microscopic mechanism of strain engineering in turning of third-harmonic generation (THG) in monolayer black phosphorene (BP). % The results show that under strain-free conditions, monolayer BP exhibits significant in-plane anisotropy, and its dominant susceptibility component reaches a maximum of $\chi^{(3);xxxx} = 1.8 \times 10^{-17} \, \text{m}^2/\text{V}^2$, agreeing well with the experimental results. % By applying uniaxial and biaxial strains along the armchair ($x$), zigzag ($y$), and out-of-plane ($z$) directions, we find that the THG response presents strong direction dependence and unique spectral shifting behaviors: in-plane compressive strain and out-of-plane tensile strain both significantly enhance the THG conductivity and induce a
redshift, whereas in-plane tensile strain and out-of-plane compression lead to suppression and a blueshift, with the tuning efficiency following the order of $z > y > x$. The microscopic origin of these phenomena is identified as the synergistic modulation of the bandgap and Berry connection by strain. % Furthermore, the synergistic or competitive effects of biaxial strain further enrich the manipulation of THG signals. % Strain engineering can serve as an effective strategy for dynamically controlling nonlinear optical processes in two-dimensional materials, and it also lays a theoretical foundation for the development of high-performance reconfigurable infrared photonic devices.
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All authors Yan Meng, Kainan Chang, Wei Song, Yuwei Shan, Jin Luo Cheng, Luxia Wang
Soft Condensed Matter
Evaluation of nonlinear optical coefficients in uniformly aligned dioxane-based ferroelectric nematic liquid crystals using second harmonic generation
Hirokazu Kamifuji, Jigen Furukawa, Kazuma Nakajima et al. (+3 more)
Ferroelectric nematic
liquid crystals (FNLCs) are promising soft platforms for nonlinear optics, but quantitative determination of their second-order nonlinear optical coefficients has been hindered by limited
alignment control. Here, polarization-resolved second-harmonic generation (SHG) measurements on a uniformly aligned dioxane-based FNLC, combined with Jones-
matrix simulations, enable determination of all principal tensor components. The resulting tensor is consistent with the expected $C_{\infty v}$ and Kleinman
symmetries, while the measured coefficients cannot be explained by a simple sum of molecular first hyperpolarizabilities. These results provide a quantitative basis for understanding nonlinear optical responses and guiding the design of FNLC-based nonlinear optical materials and devices.
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All authors Hirokazu Kamifuji, Jigen Furukawa, Kazuma Nakajima, Hirotsugu Kikuchi, Kenjiro Fukuda, Masanori Ozaki
Strongly Correlated Electrons
Order parameters and ground-state phase diagram of the interacting topological Su-Schrieffer-Heeger model with extended-range hoppings
Tsz Hin Hui, Pedro D. Sacramento and Wing Chi Yu
Topological
insulators have attracted numerous attentions recent years, where the Su-Schrieffer-Heeger (SSH) model is one of the most studied models. While the interacting version of it has been explored recently, the interplay between interactions and long-range hoppings merit further investigations. In this work, we uncover a rich phase diagram of the interacting SSH model with extended-range hoppings, in which it consists of several topological phases, two novel superconducting-like (SC-like) phases and five distinct charge-density-wave (CDW) phases. We substantiate that the SC-like and two CDW phases are direct consequences of imbalanced interactions and extended-range hoppings. We derive the order parameters (OPs) for each of the phases and verify them in large-system simulations, finding consistency with the
entanglement entropy and the fidelity in capturing the phase transitions. In contrast to the non-interacting case where the favored hoppings are unidirectional in the topological phases, the derived OPs suggest non-unidirectional hoppings are possible under the influence of interactions.
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Materials Science
Metal Halide Perovskite/Chalcohalide Heterojunctions for the Photoinduced Oxidative Coupling of p-substituted Thiophenols
Anna Cabona, Stefano Toso, Alejandro Cortés-Villena et al. (+7 more)
The introduction of a
semiconductor-
semiconductor junction is an effective strategy to enhance the photocatalytic performance of perovskite nanocrystal-based systems. Herein, we optimized the synthesis of CsPbX3/Pb4S3X2 (X= Cl, Br, I) perovskites-chalcohalides
heterostructures, whose band
alignment can be tuned by halide composition. As a proof-of-concept, we evaluated the photooxidative coupling of p-substituted thiophenols at room temperature, under visible-light, air, and without sacrificial electron donor. Notably, CsPbBr3/Pb4S3Br2 achieved up to 94 % selectivity toward disulfide (p-OCH3 thiophenol with a turnover number of 14300) highlighting the crucial role of the type-II heterojunction to promote charge separation and efficient electron delocalization across the junction.
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All authors Anna Cabona, Stefano Toso, Alejandro Cortés-Villena, Ignacio Rosa-Pardo, Mirko Prato, Michele Ferri, Julia Perez-Prieto, Ilka Kriegel, Liberato Manna, Raquel E. Galian
Soft Condensed Matter
Quantitative measurement of fluid inertial effects in confined Brownian motion
Quentin Ferreira, Pablo Palacios-Alonso, Harshit Joshi et al. (+3 more)
The hydrodynamic response of Brownian particles in
liquids is fundamentally altered by inertial forces arising from unsteady momentum transport in the surrounding fluid. These forces are of two distinct types: the added mass and the history effect. While both are well understood in bulk and weakly-confined geometries, under deterministic driving, their respective behaviours under strong confinement and thermal fluctuations remain scarcely addressed, unclear and often entangled together. The goal of the present study is thus to fill this fundamental gap. The confinement-induced variations of the two distinct inertial contributions are separately investigated in the vicinity of a flat, rigid wall, using a combination of broadrange thermal colloidal-probe atomic-force-microscopy experiments, advanced numerical simulations and theoretical arguments. Specifically, the separation of the added-mass and history-force contributions is achieved through their different frequency-scaling signatures within the assumed form of the generalized dissipation coefficient. Our results pave the way towards a complete picture of Brownian motion at interfaces, in the lubrication regime, with direct relevance to nanofluidics and interfacial biophysics.
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All authors Quentin Ferreira, Pablo Palacios-Alonso, Harshit Joshi, Rafael Delgado-Buscalioni, Yacine Amarouchene, Thomas Salez
Materials Science
BSE+ calculations for 2D materials: a unified description of excitons and plasmons
Amalie H. Svaneborg and and Kristian S. Thygesen
The Bethe-Salpeter equation (BSE) accurately describes low-energy optical spectra in materials with strong excitonic effects, but its high computational cost limits the number of electron-hole transitions that can be included. Neglecting high-energy transitions leads to an underestimation of the real part of the dielectric function, often producing a spurious plasmon peak in the BSE electron energy loss spectrum (EELS). The recently introduced BSE+ method addresses this by combining a four-point BSE-like equation for the irreducible polarisability with a two-point Dyson equation that includes the high-energy transitions at the Random Phase Approximation (RPA) level. Here, we present a detailed account of the method, extend it to two-dimensional materials, and apply it to a set of transition metal dichalcogenide monolayers. BSE+ preserves the excitonic features of the BSE at low energies while reproducing the plasmonic structure of the RPA at higher energies, yielding good agreement with experimental EELS data across the full energy range and strongly suppressing the spurious plasmon. BSE+ converges much faster than BSE with respect to the electron-hole basis size, at a comparable computational cost, and is implemented in the GPAW code.
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Strongly Correlated Electrons
Designing electronic magnetoelectric matter with organic quantum spin trimers
Yuko Hosokoshi, Christopher P. Aoyama, Zhuowei Zhang et al. (+17 more)
Magnetoelectric (ME) phenomena are commonly driven by
spin-
lattice coupling. Here we demonstrate a different route based on frustrated
quantum spin trimers that intrinsically intertwine
magnetic moments and electric dipoles. Using molecular design principles, we realize a weakly coupled
lattice of equilateral $S=1/2$
spin trimers in the organic radical
crystal TNN$\cdot$CH$_3$CN. In this material, correlated electronic fluctuations within each trimer generate electric dipoles, while geometrically frustrated intertrimer interactions organize them into collective ME states. Magnetization, thermodynamic, and dielectric measurements reveal multiple
magnetic-field-induced phases, including the $1/3$-magnetization plateau marked by pronounced dielectric anomalies. Effective low-energy theories and numerical simulations show that these phenomena are driven by electronically generated trimer dipoles whose collective order is stabilized by frustration relief of the intertrimer interactions, establishing a direct connection between
geometric frustration and emergent magnetoelectricity. Our results identify
quantum spin trimers as multifunctional building blocks, providing a bottom-up route for designing correlated ME materials from electronically active
quantum spin clusters.
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All authors Yuko Hosokoshi, Christopher P. Aoyama, Zhuowei Zhang, Toshio Ono, Kosuke Takada, Ayaka Higashiguchi, Seitaro Iisaka, Koudai Yamasaki, Hironori Yamaguchi, Shengzhi Zhang, Mohammad Irfan, Minseong Lee, Eun Sang Choi, Yasuyuki Shimura, Toshiro Sakakibara, Zhiyuan Xie, Hiroki Nakano, Yasu Takano, Cristian D. Batista, Yoshitomo Kamiya
Materials Science
Artificial Intelligence for Instability in Inorganic Perovskites: From Mechanism Discovery to Engineering Strategies
Xue Zhao, Chuan-Xin Cui, Zi-Hao Xu et al. (+3 more)
Three-dimensional all-inorganic halide perovskites, represented by CsPbX$_3$ (X = Cl, Br, I), have attracted broad interest in photovoltaics, photodetectors, and light-emitting devices because of their outstanding optoelectronic properties. Their practical deployment, however, remains limited by instability under thermal, chemical, optical, and electrical stress. Conventional studies have established important experimental and theoretical foundations, but they still struggle with
multimodal data, coupled degradation pathways, protocol dependence, sparse statistics, and uncertainty quantification. Artificial intelligence (AI) offers a practical route to address these limitations. This review summarizes recent progress in AI-assisted studies of instability in 3D CsPbX$_3$ and organizes the discussion around four linked tasks, including stability discrimination and diagnosis, microscopic mechanism analysis, consequence and reliability modeling, and engineering stability enhancement. We further discuss the main limitations of current methods, especially in data quality, protocol consistency,
benchmark design, interpretability, and transferability across domains. Finally, we outline future directions for the field, including standardized data infrastructures, interpretable cross-scale models, and tighter integration of AI with automated experiments and physics-based modeling. The aim of this review is to provide a coherent and practically useful framework for researchers seeking to use AI to understand, predict, and mitigate instability in inorganic perovskites.
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All authors Xue Zhao, Chuan-Xin Cui, Zi-Hao Xu, Yuan-Long Pang, Jun-Jie Li, Jin-Wu Jiang
Materials Science
Molecular dynamic simulation of multicomponent CoCrFeNiMn high-entropy alloy thin film deposition
Oleksandr I. Kushnerov, Sergey I. Ryabtsev and Valerij F. Bashev
The deposition and growth of a thin CoCrFeMnNi high-
entropy alloy film on an Al(100) substrate were investigated by molecular dynamics simulation. Interatomic interactions were described using a calibrated set of Morse potentials combined with mixing rules for regular solutions. During a 100 ns simulation, 50,000 atoms with an incident energy of 10 eV were deposited, producing a film of about 6.1 nm thickness. The resulting film contains face-centred cubic (FCC), body-centred cubic (BCC), hexagonal close-packed (HCP), and amorphous regions. Analysis of the radial distribution function (RDF) was used to determine nearest-neighbour distances and estimate
lattice parameters for the crystalline phases. The simulated phase composition and structural parameters are in good agreement with available experimental data.
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Materials Science
Symmetry-Breaking Induced Spin Transport and Magneto-Optical Regulation in 2D Altermagnet Ru2MoSe4
Wenpeng Wang, Hang Shi, Yuping Tian et al. (+2 more)
Two-dimensional (2D) altermagnets (AMs) offer a compelling paradigm for advanced spintronics, yet their fully compensated macroscopic
spin currents inherently limit practical device integration. In this work, using first-principles calculations and theoretical analysis, we demonstrate that the 2D material Ru2MoSe4 hosts AM ground state protected by S4zT
symmetry. Using uniaxial strain modulation and stacking configuration, we show that the monolayer and the AC-stacking
bilayer Ru2MoSe4 host fully
spin-polarized currents, piezomagnetically induced net magnetization, and the magneto-optical Kerr effect. Our findings establish Ru2MoSe4 as a tunable platform, offering a feasible mechanism to simultaneously trigger electrical
spin transport signals and amplify optical readout signatures for next-generation spintronics and valleytronics.
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All authors Wenpeng Wang, Hang Shi, Yuping Tian, Wei-Jiang Gong, Xiangru Kong
Strongly Correlated Electrons
Dynamic scaling and Family-Vicsek universality in the Hubbard model at infinite temperature
Cătălin Paşcu Moca, Doru Sticlet and Balázs Dóra
We study Family-Vicsek scaling of charge,
spin, and energy fluctuations in the one-dimensional Hubbard model at infinite temperature. Using a
quantum generating function approach, we compute time-dependent cumulants of transferred conserved quantities and analyze how the corresponding roughness depends on subsystem size and time. We start by focusing on a single interface at half the chain and determine the transport exponents. Then we turn to fluctuations of a small finite interval and study the Family-Vicsek universality of fluctuations over an extended timescale. We find that the long-time scaling behavior is controlled by integrability. In the free limit, charge,
spin, and energy all display ballistic transport. In the interacting integrable Hubbard chain, charge and
spin cross over to a KPZ scaling regime, while the energy sector remains ballistic. Once integrability is broken by a next-nearest-neighbor density interaction, the long-time dynamics becomes diffusive in all sectors. In every case we also observe a short-time microscopic regime with apparently universal ballistic growth before the hydrodynamic scaling window sets in. The Family-Vicsek setup allows us to determine the growth, the saturation as well as the dynamical exponents.
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Mesoscale and Nanoscale Physics · Cross-listed from physics.optics
Helicity-Resolved Spatiotemporal Mapping of Chiral Plexcitons in Helicoids
Jeong Hyun Han, Sankaran Ramesh, Jaeyeon Jo et al. (+10 more)
Plasmon-
exciton hybrids, or plexcitons, offer deeply subwavelength light-matter interactions with versatile pathways for energy redistribution. Incorporating chirality into such systems is particularly compelling, enabling
spin-sensitive optical functionality that can operate on ultrafast timescales and within ultracompact volumes. Despite recent progress in
chiral plexcitonic systems, how structural chirality and plasmon-
exciton coupling determine chiroptical spectra and ultrafast energy flow remains elusive. Here we realize
chiral plexcitons by functionalizing intrinsically
chiral gold helicoid nanoparticles with molecular J-aggregates. Within a non-Hermitian framework, we trace the microscopic origin of the helicoid chiroptical response and its coupling to the excitonic transition, revealing how the helicity of light selectively addresses distinct hybrid responses. At the spatiotemporal extreme, we find that the gap-localized response not only enhances polarization-sensitive contrast but also strengthens the local hybrid interaction, leading to accelerated ultrafast relaxation. Together, these space-, time-, and polarization-resolved measurements provide a physically grounded and experimentally benchmarked picture of
chiral plexcitonic coupling, identifying chirality as a practical control parameter for selectively steering nanoscale energy pathways and dynamics.
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All authors Jeong Hyun Han, Sankaran Ramesh, Jaeyeon Jo, Pavel Chabera, Ryeong Myeong Kim, Sung Hoon Cho, In Han Ha, Amitav Sahu, Yoonsang Tak, Jiawei Lv, Miyoung Kim, Ki Tae Nam, Tönu Pullerits
Statistical Mechanics · Cross-listed from q-bio.PE
Natural Selection in the Wake of Catastrophe
Jesse Young Lin, Omer Granek, Joshua Sodicoff et al. (+3 more)
Living organisms, from bacteria to humans, are more likely to survive if their traits enhance fitness. In populations well adapted to their environmental niches, natural selection proceeds via rarely beneficial mutations. But when a catastrophe wipes out niche diversity, sudden adaptation often follows. Here, we present a data-validated theory of natural selection in the wake of catastrophe and unveil a simple law that emerges during recovery: the mean fitness relaxes inversely with time, with a prefactor proportional to the number of traits coupled to the post-catastrophe environment. We put our approach to test using experimental fitness landscapes measured following antibiotic administration to E. coli. The resulting mean trait adaptation is not described by gradient ascent on a fitness landscape, instead it follows an
algorithm known as Levenberg-Marquardt optimization. Near fitness peaks, evolutionary trajectories are biased against greediness - from an optimization perspective, post-catastrophic selection is optimistic.
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All authors Jesse Young Lin, Omer Granek, Joshua Sodicoff, Seppe Kuehn, David Pincus, Vincenzo Vitelli
Materials Science
Precipitate phase selection and grain boundary morphology in Cu-Ni-Si-Mn alloys: A machine-learning interatomic potential study
Aadil Fayaz Wani, Il-Seok Jeong, Haekwan Jeon et al. (+6 more)
Alloys inevitably contain interphase boundaries, whose energetics govern nucleation processes and precipitate morphology. In Cu-Ni-Si
alloys, Mn addition markedly changes grain boundary (GB) precipitation behavior. While GB precipitation of stable Ni$_2$Si in Mn-free
alloys is associated with degraded mechanical properties, Mn addition instead promotes film-shaped Mn$_6$Ni$_{16}$Si$_7$ (G-phase) precipitation, which is correlated improved mechanical properties. However, the atomic origin of the contrasting GB phase selection and morphology remains unclear. Here we perform machine-learning interatomic potential (MLIP) calculations to investigate the effect of interphase-boundary atomic structure on GB precipitates in Cu-Ni-Si
alloys with and without Mn. The MLIP calculations reliably reproduce DFT-level energetics for interfacial bonding and microstructural configurations, and further predict that Mn addition favors GB precipitation of Mn$_6$Ni$_{16}$Si$_7$ rather than Ni$_2$Si. Experimentally, Mn-free
alloys are observed to exhibit irregularly-shaped Ni$_2$Si precipitates with open-boundary-like Cu/Ni$_2$Si interfaces, whereas Mn-added
alloys exhibit film-like G-phase at GBs. Large-scale atomistic interface calculations reveal that the coherent interface structure between Cu and Ni$_2$Si favors the formation of plate-like strained Ni$_2$Si precipitates in the
matrix. Upon coarsening and stress release, an out-of-phase coherent-like interface can form at GBs, generating a local repulsive region that gives rise to surface-like open-boundary structures and explains the irregular morphology of GB stable Ni$_2$Si precipitates. In contrast, Cu/Mn$_6$Ni$_{16}$Si$_7$ interfaces remain predominantly incoherent with moderate boundary energies and no pronounced repulsive regime, thereby stabilizing continuous interfacial contact and explaining film-shaped GB precipitation.
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All authors Aadil Fayaz Wani, Il-Seok Jeong, Haekwan Jeon, Jaesun Kim, SuDong Park, Eun-Ae Choi, Seung Zeon Han, Seungwu Han, Byungki Ryu
Superconductivity
Superconducting diode effect in magnetic superconductors realized by nonreciprocal domain-wall dynamics
Dong Hui Han, Suk Bum Chung and Se Kwon Kim
A superconducting diode effect is shown to arise in
ferromagnetic superconductors through the nonreciprocal dynamics of
magnetic domain walls. Specifically, we show that current-driven dynamics of a
magnetic domain wall under a certain external field can exhibit a nonreciprocal Walker breakdown, possessing two distinct direction-dependent critical currents beyond which the domain wall precesses continuously. In
ferromagnetic superconductors, the constant rotation of a domain wall is shown to give rise to phase slips, opening up dissipation channels, whereby the nonreciprocal Walker breakdown is mapped to the superconducting diode effect. For the nonreciprocal Walker breakdown of a
magnetic domain wall, we analytically examine its dependence on the
magnetic field and the Gilbert damping and verify the theoretical results with micromagnetic simulations. We then extend the analysis to
ferromagnetic superconductors by considering additional effects from the superconductivity and identify criteria for experimental conditions to realize the predicted superconducting diode effect. Our work demonstrates that topological defects, such as domain walls, in
magnetic superconductors can serve as an intrinsic nanoscale platform for nonlinear nonreciprocal superconducting functionalities within a single homogeneous material, circumventing the need for complicated engineered
heterostructures and thereby enabling the miniaturization of superconducting devices down to the nanometer scale that is challenging to achieve with conventional Josephson junctions.
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Mesoscale and Nanoscale Physics
Valley-Landscape Engineering in Bilayer WSe$_2$ Gate-All-Around Transistors
Katsunori Wakabayashi, Souren Adhikary and Kazuhito Tsukagoshi
The K-$\Gamma$ valence-band splitting $\Delta_{K\Gamma}$ that governs hole transport in few-layer WSe$_2$ is not a fixed material constant. It is tuned by interlayer stacking, strain, pressure, and the dielectric and displacement-field environment. Its computed value also depends on the level of electronic-structure theory.
Bilayer WSe$_2$ therefore realizes a tunable multivalley landscape rather than a single operating point. We combine first-principles inputs with an analytical two-valley device model for gate-all-around (GAA) field-effect transistors, and obtain three results. (i) The minimum subthreshold swing stays near the thermionic limit of $60$~mV~dec$^{-1}$ independently of layer number, because well below threshold the
quantum capacitance remains far below the
oxide capacitance. (ii) The effective mobility is set by the K-to-$\Gamma$ occupation ratio: valley redistribution is strong when $\Delta_{K\Gamma}$ is of order $k_BT$ and fades toward single-valley $K$ transport as the splitting grows. (iii) In this small-splitting regime, biaxial strain tunes the effective mobility - and hence the on-current - through the valley population while the subthreshold swing stays at the thermionic limit, decoupling mobility control from electrostatic switching in a way distinct from scattering-based strategies. A symmetric GAA gate controls carrier density at essentially fixed splitting, and because an out-of-plane field increases $\Delta_{K\Gamma}$, its midplane-symmetric potential avoids driving the channel out of the small-splitting regime. The design principle has two facets: small $\Delta_{K\Gamma}$ - set by layer number, stacking, strain, and dielectric engineering - maximizes the valley tunability of $\mu_\mathrm{eff}$, whereas larger $\Delta_{K\Gamma}$, for example through compressive strain, suppresses the heavy $\Gamma$ valley and maximizes the on-state mobility.
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Materials Science
Chemical tuning of magnetic ordering and cryogenic magnetocaloric response in zircon-type Gd1-xErxVO4
Ming Zeng, Muqing Su, Liang Ming et al. (+4 more)
Chemical substitution offers an effective route to tune
magnetic ordering and magnetocaloric performance in rare-earth
oxides for cryogenic refrigeration. Here we investigate the structural evo lution,
magnetic properties, and magnetocaloric effect of polycrystalline zircon-type Gd1-xErxVO4 (x=0, 0.1, 0.25, 0.5, and 0.75). Powder X-ray diffraction confirms that all samples crystallize in the tetragonal zircon structure without detectable
impurity phases. Substitution of Gd3+ by the smaller Er3+ ion produces a systematic
lattice contraction and modifies the
magnetic behavior of the rare-earth sublattice. In particular, the
magnetic ordering temperature is suppressed from 3.65(2) K in GdVO4 to 2.76(2) K in Gd0.9Er0.1VO4 , accompanied by a weakening of the
spin-flop-like field-induced anomaly observed in the parent compound. A low Er concentration correspondingly improves the low-temperature magnetocaloric performance, with Gd0.9Er0.1VO4 exhibiting a max imum
magnetic entropy change of 45.1 J kg-1 K-1 for mu_0 Delta H=7T. These results demonstrate that weak Er substitution effectively tunes the competition among exchange interactions, dipolar coupling, and
magnetic anisotropy, optimizing the balance between
magnetic ordering and available
spin entropy in zircon-type rare-earth vanadates, which is crucial for developing efficient cryogenic refrigeration materials.
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All authors Ming Zeng, Muqing Su, Liang Ming, Xiaolong Yang, Wang Chen, Lingwei Li, Hai-Feng Li
Materials Science
Local electronic structure and dynamics of hydrogen in $\text{CeO}_2$
A. Koda, T. U. Ito, M. Hiraishi et al. (+2 more)
The local electronic states of
muon (Mu) as an isotope of hydrogen (H) in high-quality single-crystalline ceria (CeO$_2$) are investigated using
muon spin rotation/relaxation ($\mu\text{SR}$) and first-principles density functional theory (DFT) calculations. Upon positive
muon implantation, both paramagnetic (Mu$^0$) and diamagnetic (Mu$^*$) states are observed below $\approx$10 K.
Magnetic field dependence of the Mu$^0$ signals combined with DFT results provides evidence for the formation of a polaron state, consisting of Mu bonded to a ligand oxygen and a $4f$ electron localized on a nearby Ce site. The
crystal-orientation dependence of the Mu$^0$ signal suggests strong anisotropy of the $4f$ electron due to the
spin-orbit coupling with lifted degeneracy. Furthermore, the Mu$^0$ state exhibits transition to the Mu$^*$ state that corresponds to another Mu$^0$ state (exhibiting a diamagnetic response due to fast
spin/charge fluctuations) at temperatures above $\approx$10 K, before disappearing above $\approx$30 K. These findings suggest rapid diffusive motion of the $4f$ electrons and/or Mu (as well as H) at higher temperatures.
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All authors A. Koda, T. U. Ito, M. Hiraishi, H. Okabe, R. Kadono