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Physics Condensed Matter Materials Science

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Thursday 8 October

Materials Science

Assessing the Reliability of Foundational Machine Learning Potentials for Evaluating the Veracity of the Crystallography Open Database

The Crystallography Open Database (COD) contains over half a million experimentally determined crystal structures. Validation of crystallographic data proceeds at three hierarchical levels, the third of which assesses the physical plausibility of structures. This level has typically relied on empirical heuristics or expert judgment, which are slow and error-prone given the size of crystallographic databases and the rate at which new structures are deposited. Here we assess whether universal machine-learning interatomic potentials (MLIPs) can automate this level of validation. Of the 522 086 COD entries, 317 457 (60.8%) passed a data-quality filter removing disordered structures, formula mismatches and unmodelled solvent. These structures were relaxed with M3GNet, and 314 153 (99.0%) converged without a large change in cell volume. For most entries the relaxed and deposited volumes are nearly identical. Convergence and volume change thus provide simple criteria for identifying relaxations that do not confirm the deposited structure. A manual inspection of 327 structures showed that no single descriptor threshold (energy, largest force, or atomic displacement) separates valid from invalid structures. A comparison of M3GNet, CHGNet, PET-MAD and PET-OAM on 524 selected structures revealed model-specific failures: M3GNet distorts cyclopentadienyl and other $\pi$ ligands, and both M3GNet and CHGNet distort thiophene and thiazole rings, whereas the PET models preserve these motifs. All models detected missing hydrogen atoms, and at least some detected spurious hydrogens, incorrectly assigned atom types, and two previously unreported coordinate errors. No single model detected all error types. MLIP relaxation is therefore a useful but model-dependent screening tool, and combining several models is preferable to relying on any single one.
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All authors Justinas Šlepavičius, Antanas Vaitkus, Andrius Merkys, Saulius Gražulis, Linas Vilčiauskas

Materials Science

Localization of Candidate Kikuchi Regions in RHEED Images: Visibility and Annotation Boundaries

Kikuchi lines and bands in reflection high-energy electron diffraction (RHEED) carry information on crystal geometry and electron scattering, but are often obscured by intense diffraction streaks. We combine multiscale convolution with spatial detail from skip connections and independent supervision that allows overlapping regions to localize streaks and candidate Kikuchi regions separately. Using manual polygon annotations made before model-assisted editing, the Kikuchi intersection-over-union (IoU) on 29 laboratory test images from separate growth batches was $0.6290 \pm 0.0137$. We then performed supervised adaptation to public chalcogenide images and stratified images by Kikuchi visibility using the median ratings of three observers who rated the images separately, two of whom rated with predictions hidden. With all 244 training images, IoU for the clear-feature group of 10 test images was $0.5014 \pm 0.0336$, whereas ambiguous images gave lower values. With 100 training images, clear-group IoU was $0.5171 \pm 0.0073$; expanding the training set also reduced responses on images without target features. Reported uncertainties are sample standard deviations across four laboratory runs or three adaptation runs. Public-image adaptation used reference masks of mixed provenance, including prediction-derived drafts. The method converts visual cues into inspectable spatial regions, providing a basis for analysis of line positions, intersections, and local intensity.
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All authors Lumou Weng, Hanshan Huang, Zhenhan Zhang, Gan Wang

Materials Science

Giant Magnetization Enhancement at Ultrathin Limit of an Orthoferrite

Low-dimensional magnetic systems have received significant interest due to their high scalability and energy efficiency for future electromagnetic applications. However, low-dimensional magnetism at finite temperature is subject to Mermin-Wagner fluctuations, which make its realization highly challenging. Here, we propose structural modulation in the thin-film structure of an orthoferrite system to achieve a high low-dimensional magnetic response at room temperature. ErFeO3 epitaxial thin film with atomically precise thickness control demonstrates that the magnetic response at 300 K can be significantly enhanced compared to its bulk counterpart. The magnetic response reaches its maximum value of 3.7 MuB/f.u. for the 2 nm-thick epitaxial film. The characteristic domain structure resulting from epitaxial strain and orbital reconstruction at the surface, both arising from the thin film geometry, has been proposed as the microscopic origin of the giant magnetization enhancement. We show that magnetic ordering can indeed be realized in the 2D limit, with deliberate structural control of orthoferrite systems.
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All authors Jin Young Oh, Yaolong Xing, Seung Gyo Jeong, Sehwan Song, Woo-suk Noh, Valeria Lauter, Seongjae Choi, Seyoung Kwon, Jaeha Choi, Si Won Kim, Hong Hyun Jeon, Heemin Lee, Cheng-Tai Kuo, Jun-Sik Lee, Chanyoung Lee, Yeonkyu Lee, Jeehoon Kim, Heung-Sik Kim, Sungkyun Park, Sang Ho Oh, Woo Seok Choi

Materials Science

Light-induced interlayer spacing dynamics via orbital phonon coupling

Interlayer coupling controls the electronic properties of layered van der Waals transition metal dichalcogenides. We investigate light-induced control of the interlayer spacing through orbital-selective excitation in trilayer 1T'-WSe2 and 1T'-WS2. Real-time time-dependent density functional theory simulations show that the interlayer spacing contracts or expands depending on whether chalcogen p-orbital density is depleted from or accumulated in the interlayer region. Effective Lindblad models coupled to the lattice dynamics reproduce these contrasting responses with simplified dynamics. A single effective excited state captures the cosine-like displacive motion in trilayer 1T'-WSe2, whereas the shift of the equilibrium spacing in trilayer 1T'-WS2 requires two excited states with different electron-phonon couplings and relaxation channels. Static calculations at varied interlayer spacings indicate that these spacing changes modify the electronic gaps and could access different electronic phases. These results connect orbital redistribution, carrier relaxation, and interlayer breathing motion, and establish orbital-selective optical excitation as a route to tuning the electronic properties of layered materials.
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All authors Wenwen Mao, Hanbyul Kim, Angel Rubio, Dongbin Shin

Materials Science · Cross-listed from cond-mat.mes-hall

Cooperative STT and SOT switching in perpendicular magnetic tunnel junctions: Role of the pulse-end magnetization state

Spin–orbit torque MRAM (SOT-MRAM) is a leading candidate for next-generation nonvolatile memory, offering high speed, endurance, and architectural compatibility. However, in conventional SOT switching, the magnetization remains near the in-plane region at pulse termination, making the final state highly sensitive to post-pulse relaxation dynamics and prone to back-switching. To overcome this, we propose a field-free scheme in which the transverse SOT drives large-angle precessional excitation while the perpendicular spin-transfer torque (STT) biases the trajectory toward the reversed $-z$ state. Micromagnetic simulations reveal a nonlinear switching boundary in the $J_{\mathrm{STT}}$–$J_{\mathrm{SOT}}$ parameter space, originating from the distinct dynamical roles of the two torques: SOT primarily governs the excitation and crossing of the dynamical separatrix, whereas STT controls the terminal trajectory and final-state selection. An analytical macrospin model, based on the stability analysis of the current-induced equilibrium, reproduces the critical-boundary trends as functions of current density, Gilbert damping $\alpha$, and uniaxial anisotropy $K_\mathrm{u}$, and distinguishes dynamic anti-damping and static instability branches. Systematic analyses of pulse duration, damping, anisotropy, and the STT–SOT balance further demonstrate that reliable ultrafast switching requires not only sufficient excitation to cross the separatrix before pulse termination, but also precise control of the pulse-end magnetization state to minimize post-pulse relaxation. These results establish that the pulse-end state, rather than the instantaneous torque amplitude, is the decisive factor governing switching speed and reliability in coupled STT–SOT systems.
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All authors Zeyi Zhu, Ding Ma, Kai Zhang, Mingwei Wu, Yi Huang, Jiarui Niu, Shuai Zhang, Mengdi Yin, Ka-San Mak, Lina Chen, Bo Liu, Tiejun Zhou, Yongbing Xu, Ronghua Liu

Materials Science · Cross-listed from math-ph

Uniformity theory of weighted composites

By including spatially varying volume fractions of the constituents, composites are obtained that are akin to functionally graded media. An extension of the mathematical apparatus of double groupoids is proposed to incorporate these materials with the aim of eventually classifying defects of misalignment and their time evolution.
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Materials Science

Bond-Switching Reconstruction in Bare Ti3C2 MXene

MXene properties are typically tuned through composition, surface termination, and intercalation, while the metal-carbon framework topology is considered fixed. Here, we demonstrate that this framework can reconstruct. Unconstrained relaxations of biaxially strained bare Ti3C2 yield a dynamically stable polymorph, N, featuring a 15-atom primitive cell, six distinct Ti-C bond classes, and 2.55 Å Ti-Ti pairs. The coherent transformation pathway crosses an 8.47 eV barrier per cell but first reaches another reconstructed minimum, N', lying 1.08 eV below N, revealing a family of bond-switched networks. Phase N lies 7.58 eV per cell above the parent. Reverse barriers along the calculated pathway are 1.50 and 1.98 eV per cell for N and N', respectively. Reconstruction quenches the parent spin polarization, yielding a nonmagnetic metal with a nearly fourfold increase in Fermi-level density of states. Bader and electron-localization analyses suggest charge redistribution from C toward Ti associated with Ti-Ti pairing. In multilayers, reconstructed layers form interlayer Ti-C bonds. A 10% biaxial tension halves the phase-energy difference, and pressure reverses phase ordering near 85 GPa. These results establish bond-switching reconstruction as a mechanically controllable structural degree of freedom in MXenes.
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Wednesday 7 October

Materials Science · Cross-listed from physics.atom-ph

Disorder-induced nuclear-transition doublet at nominally cubic $^{229}$Th sites

The $^{229}$Th nuclear clock transition is inhomogeneously broadened even at sites of nominally cubic symmetry, where the electric-field gradient of the ideal lattice vanishes. We show that dilute static point-defect disorder produces a doublet with a zero at the quadrupole-free frequency. The doublet is symmetric in the isotropic approximation; size misfit point defects introduce a small lobe asymmetry without removing the zero. Charged and size-misfit defects share inverse-cube scaling and an approximately common normalized profile, whose width separates into a host-controlled background and a term linear in the $^{229}$Th density. In a heavily doped $^{229}$Th:CaF$_2$ crystal [Nature 657, 626 (2026)], the thorium-linked contribution is comparable to the measured 1.1 MHz width; in a lightly doped crystal [arXiv:2606.08870], the 0.9 MHz width bounds the host background. Neither spectrum shows the predicted dip, which points to the presence of extended defects in both crystals. If the predicted dip is resolved, it can provide a nuclear-clock discriminator referenced to the quadrupole-free nuclear transition frequency.
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Materials Science · Cross-listed from cond-mat.mes-hall

Reading Altermagnetic Domains with Photon Drag

Finite photon momentum allows second-order photocurrents in centrosymmetric space groups, where the conventional bulk photovoltaic effect is forbidden. Here we study the photon-drag response of altermagnets and show that its angular dependence reveals both the symmetry of the magnetic order and the Néel domain of the sample. For example, when a crystal rotation exchanges the two domains, the domain-even and domain-odd parts of the current appear in different angular harmonics, $4n$ and $4n+2$ for tetragonal $d$-wave altermagnets, so that two measurements rotated by $90^\circ$ on a single domain isolate the domain-odd current. We also find that these microscopic contributions exhibit opposite domain parities depending on light polarization. Under linear light, only the shift term is domain odd, while under circular light, the domain-odd channel switches to the injection, Fermi-surface, and contact principal-value terms. Mirror symmetries fix the angular phase of each harmonic and distinguish $d_{x^2-y^2}$, $d_{xy}$, and $g$-wave order. In contrast, conventional collinear antiferromagnets show no domain-odd photon-drag current, and in tetragonal ferromagnets the two parts share the same harmonics. Although the altermagnetic spin splitting does not require spin-orbit coupling (SOC), SOC is essential to observe the domain-odd charge current. Our work uncovers distinct signatures of altermagnetism in photon drag and provides a route to all optical magnetic readouts of altermagnets.
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Materials Science

Band Tail States: Speed Bump or End of the Road for Two-Dimensional Semiconductors?

We propose that the path to realizing the full potential of two-dimensional (2D) electronics lies in understanding and mastering their energy band tail states (BTS). Unlike silicon, which benefits from sharp band edges (Urbach energy $E_\rm U$ ~ 10 meV), today's monolayer 2D semiconductors have rough band edges ($E_\rm U$ ~ 100 meV) caused by spatial potential inhomogeneity. Comparing a physics-based electrical model to experiments, we demonstrate that BTS cause reduced effective mobility and "slow" transistor turn-on with excessive gate voltage in monolayer 2D transistors, which sets a fundamental limit for their energy-efficient operation. We also show that BTS effects in 2D transistors could be mitigated with higher gate capacitance, with strain engineering, and by using bilayer instead of monolayer 2D channels, as long as $E_\rm U$ is reduced below ~ 50 meV. This work provides a theoretical framework and design guidelines to navigate these fundamental limits, and to enable successful integration of 2D semiconductors into low-power nanoelectronics.
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All authors Zherui Han, Robert K. A. Bennett, Davide Donadio, Maritha A. Wang, Tara Peña, Mikaël Cassé, Martin Vanbrabant, Valeriya Kilchytska, Jean-Pierre Raskin, Eric Pop

Materials Science

Data driven screening of CaCu$_5$-type magnetic structures

We develop a machine learning assisted workflow for the rapid screening of permanent magnet candidates within the CaCu$_5$ structure family. We generated more than 60,000 structures through substitutions. These compositions were screened using a combination of pretrained materials models, Materials Project data, and a machine-learning model for magnetization prediction. Four criteria, namely, metallicity, negative formation energy, energy above the convex hull $\leq 50$~meV/atom, and predicted magnetization above the adopted $\geq 0.75$~T threshold reduced the initial chemical space to 439 candidates for first-principles calculations. Density functional theory calculations revealed that 159 compounds exhibit positive axial magnetic anisotropy energy, favoring [001] over the tested in-plane directions. The resulting dataset reveals chemical trends in magnetic anisotropy across the CaCu$_5$ compositional space and provides a set of candidates for further investigation. More broadly, this work demonstrates a practical strategy for combining existing machine learning models with first-principles calculations to systematically reduce large chemical spaces to tractable sets for computationally intensive materials screening.
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Materials Science

Ceramic Materials: From Atomic Bonding and Processing to Microstructure, Functional Properties, and Biomedical Applications

Ceramic materials are inorganic, predominantly nonmetallic solids whose performance is governed by the interplay among atomic bonding, crystal structure, processing, microstructure, and functional properties. Their ionic and covalent bonding provides high hardness, thermal and chemical stability, wear resistance, and diverse electrical behavior, but also limits plastic deformation and increases sensitivity to flaws, porosity, grain boundaries, and residual stresses. This review examines ceramics through the processing–microstructure–property–performance relationship, emphasizing the effects of crystal chemistry, defects, grain size, porosity, and phase stability on mechanical, thermal, electrical, and biological behavior. Conventional sintering, sol–gel processing, and additive manufacturing are discussed as key routes for controlling densification, porosity, geometry, and composition. Biomedical ceramics, including alumina, zirconia, calcium phosphates, hydroxyapatite, tricalcium phosphate, and bioactive glasses, are also reviewed. Emerging topics include nanoceramics, smart ceramics, composites, multimaterial manufacturing, defect engineering, immunomodulatory bioceramics, and sustainable processing. Major challenges remain in brittle fracture, processing heterogeneity, degradation control, scale-up, and the porosity–strength trade-off. Future advances will require integrating advanced manufacturing, multiscale characterization, predictive modeling, and data-driven design.
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All authors Jairo Rondon, Juan Valera, Alex Velez Cruz, Irela Perez Magin

Materials Science

Hierarchical Relaxation in Large-twist-angle Moire Drives Supermoire Formation

Supermoire lattices in large-angle twisted bilayers have recently been shown to emerge from periodic arrangements of commensurate stacking motifs, yet the microscopic structural mechanism governing their formation has remained unresolved. Here, we uncover the microscopic origin of supermoire order as a hierarchical lattice relaxation process. Combining force-field simulations with experimental validation via super-resolution, layer-resolved multislice electron ptychography, our results identify interlayer Se-Se repulsion at the picometer scale as the driving force, giving rise to coupled short-range (about 1 nm) moire relaxation and coexisting long-range (about 10 nm) supermoire modulation. These findings demonstrate that even picometer-scale lattice relaxation remains critical in large-angle moire systems and must be explicitly considered in understanding their emergent electronic and quantum phenomena.
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All authors Chuqiao Shi, Giovanny Espitia, Yanxing Li, Yi Jiang, Yiyuan Luo, Xu Qi, Kaiwen Yang, Xiaohui Liu, Xiaoqin Li, Chih-Kang Shih, Mit H. Naik, Yimo Han

Materials Science

Resolving the interfacial mechanical landscape of monolayer NbSe2 grown by confined epitaxy

Confined epitaxy has recently emerged as a novel methodology for controlled growth of high-quality monolayer two-dimensional (2D) materials. However, mechanistic understanding remains limited to analysing nucleus adsorption and diffusion barriers. Here, I discover that van der Waals (vdW) confinement not only affects the specific adsorption and diffusion of nuclei on confined substrates but also induces strong coupling to atomic forces at the interface. Using artificial intelligence (AI) assisted density functional theory (DFT) calculations, I study how vdW confinement couples to the atomic motion of monolayer NbSe2 grown between c-plane sapphire and hexagonal boron nitride (h-BN). The calculated force-electronic landscape yields large mechanical forces of +0.070 and -0.04 eV per Angstrom on Nb and Se, respectively, giving rise to a unit-cell interfacial interaction energy up to 2.4 eV, comparable to reported adsorption and diffusion energies on similar substrates. The results indicate that interfacial mechanics may explain the success of confined epitaxy. The findings suggest that tuning interfacial mechanics, and related vdW mechanochemistry, could be a promising route to high-throughput, high-quality materials synthesis.
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Materials Science · Cross-listed from cond-mat.str-el

Symmetric Mode Ansatz: Theory of Magnon Collective Modes in Chern Insulators

Moiré materials host integer and fractional Chern insulators (FCIs) where time-reversal is broken spontaneously by flat band ferromagnetism. In twisted MoTe2, unlike in quantum Hall, opposite spins carry opposite Chern numbers and realize Ising ferromagnetism with gapped magnon excitations. Clarifying the nature of these collective modes and the origin of the magnon gap is key to understanding the stability of the Chern magnets in these materials. To do so, we develop a generalized single-mode approximation, which we call the symmetric mode ansatz (SyMA), to describe the low-energy magnon spectrum. We find it to be in exceptional agreement with numerical calculations at integer filling, and qualitatively accurate across fractional fillings including FCIs. To explain the accuracy of the SyMA, we present two families of Hubbard models (including the Haldane model and continuum ideal bands) whose collective modes are analytically solvable and for which the SyMA is either exact or an accurate approximation. For a class of these models where SyMA is exact, we prove two-sided bounds on the zero-momentum magnon gap in terms of the Chern number, Berry curvature, and quantum metric, revealing that uniform quantum geometry is sufficient for stabilizing magnetism in Chern bands.
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All authors Miguel Gonçalves, Jonah Herzog-Arbeitman, Juan Felipe Mendez-Valderrama, Andreas Feuerpfeil, B. Andrei Bernevig, Nicolas Regnault

Materials Science · Cross-listed from cs.LG

PXtal: Learning to Align Powder X-Ray Diffraction and Crystal Structures under Information Asymmetry across Modalities

Scientific multimodal learning commonly assumes that paired views are comparably informative. Powder X-ray diffraction (PXRD) makes this mismatch explicit: compressing a three-dimensional crystal structure into a one-dimensional diffraction pattern loses information and makes the pattern harder to connect to the crystal structure that produced it. We introduce PXtal, a framework for learning aligned PXRD and crystal representations under this physically imposed information asymmetry. PXtal uses Unbalanced Optimal Transport (UOT) to adapt the cross-modal coupling and coupling-level generalized Kullback-Leibler (GKL) divergence to supervise the full transport plan. Across six test sets, including four zero-shot transfer sets, PXtal consistently outperforms the baseline models in PXRD-to-crystal candidate retrieval, with the largest gains when PXRD patterns have close but crystallographically distinct nonpaired neighbors, meaning similar input patterns associated with different crystals. The resulting crystal and PXRD encoders transfer more effectively to downstream materials and crystallographic tasks. These results identify information asymmetry as a general design problem in scientific multimodal learning: alignment objectives should reflect what each modality preserves.
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All authors Zhuoran Yang, Christopher M. Collins, Bei Peng, Luke M. Daniels, Matthew J. Rosseinsky, Vladimir V. Gusev

Materials Science

Magnetic Order from First-Principles Linear Response

The magnetic order of a material is usually predicted by comparing the energies of trial spin configurations, a strategy that cannot reach orders outside the chosen set and rapidly becomes intractable as the number of magnetic sites grows. We show that the order can instead be identified directly from the paramagnetic state: the leading eigenmodes of its self-consistent magnetization response, obtained with spin–orbit coupling at arbitrary wavevector within the primitive cell, determine both the ordering wavevector and the pattern of moments, with no candidate configurations. With no prior assumption about the order, the method correctly reproduces the G-type stacking with out-of-plane moments in the altermagnet candidate KV$_2$Se$_2$O, the $3{:}1$ ferrimagnetic tetrahedra of Cu$_2$OSeO$_3$, and the incommensurate spiral instability of monolayer NiI$_2$. Our results establish the response of the paramagnetic state as a predictive and unbiased route to assessing magnetic order, enabling systematic searches for complex magnets.
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All authors Yaroslav Zhumagulov, Emiliano Cruz-Aranda, Denis Kochan, Oleg V. Yazyev

Materials Science

Interface Doping Mechanism of p-Type Conductivity in Mist-CVD-Grown LiGa5O8 Thin Films

LiGa5O8 is an ultrawide-bandgap oxide semiconductor that has recently been experimentally demonstrated to exhibit p-type conductivity; however, the origin of the observed p-type transport remains poorly understood. In this work, we investigate the origin of p-type conductivity by systematically comparing the electrical, compositional, and structural properties of mist chemical vapor deposition (mist-CVD) grown LiGa5O8 thin films exhibiting either p-type conductivity or insulating behavior under different growth conditions. The p-conductive films exhibit room-temperature hole concentrations on the order of 10^18 cm^-3. The emergence of p-type conductivity is found to be strongly correlated with the elemental composition of the films, with X-ray photoelectron spectroscopy (XPS) revealing a reduced Li/Ga ratio in the p-conductive films, indicative of a Li-deficient composition. Raman spectroscopy and X-ray diffraction (XRD) further reveal signatures of e̱ta}-Ga2O3 in the p-conductive films that are absent in the insulating films, demonstrating the formation of a secondary e̱ta}-Ga2O3 phase. Considering the reported type-II band alignment between LiGa5O8 and e̱ta}-Ga2O3, together with theoretically predicted acceptor levels associated Li vacancies (V_Li) in LiGa5O8, the formation of mixed LiGa5O8/e̱ta}-Ga2O3 phases is proposed to facilitate electron transfer from the e̱ta}-Ga2O3 valence band to acceptor states in LiGa5O8, thereby promoting hole accumulation and p-type conductivity.
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All authors Dong Su Yu, Shashu Tomar, Zixiu Huang, Kaitian Zhang, Sarker Md. Sadman, Vijay Gopal Thirupakuzi Vangipuram, Ye Lin, Walter R. L. Lambrecht, Roberto C. Myers, Hongping Zhao

Materials Science

Electronic Structure Descriptors for CO$_2$ Conversion Activity in Perovskite Oxides

Electronic structure descriptors have been widely used to rationalize catalytic activity, but their application to CO$_2$-to-CH$_4$ conversion in perovskite oxides remains relatively limited. Here, we investigate six electronic structure descriptors related to band centers and bandwidths. We find that the unoccupied transition-metal (TM) $3d$-band center, charge-transfer energy, and the ratio of the unoccupied TM $3d$ to occupied O $2p$ bandwidths, $W_{3d}/W_{2p}$, exhibit negative correlations with CH$_4$ activity. These qualitative trends are further quantified using a parametric brute-force searching (BFS) approach to obtain explicit fitting equations. Notably, the selected equations depend only on $W_{3d}/W_{2p}$, providing an electronic structure perspective on the enhanced activity in double perovskites. We apply the selected equation to screen 24 La-based double perovskites. This screening suggests that La$_2$CoGaO$_6$, La$_2$CoAlO$_6$, and Ti-containing compositions are promising candidates. The present approach can help identify descriptor-activity relationships and guide materials screening in perovskite oxides.
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Materials Science

Prediction of the thermal neutron response of grain-boundary impedance in Gd-doped ceria based on the radiation-ionic effect

The radiation-ionic effect was recently reported in 3 mol% Gd-doped CeO$_2$ (3GDC): under $^{60}$Co gamma irradiation at 35 Gy/min, the grain-boundary (GB) ionic resistance of a bulk pellet decreased 680-fold at room temperature, because electrons trapped at the GB core lower the space-charge potential. The effect has been demonstrated only with photons. Gd has the largest thermal-neutron capture cross section of any stable element and is also the dopant that creates the GB barrier in GDC, so the same mechanism could link GB impedance to thermal-neutron sensing; whether it does, and under what conditions, has not been examined. Here the thermal-neutron response of 3GDC is modelled with the gamma-calibrated Mott-Schottky/Seager framework, with unmeasured parameters carried as intervals and propagated jointly. Each capture deposits about 50 keV by conversion and Auger electrons within 1 $\mu$m, the remaining 8 MeV leaving as prompt photons; Gd segregation to the GBs adds a factor of only 1-2 because the electron range exceeds the grain size. A thermal flux of $8\times10^{9}$ cm$^{-2}$s$^{-1}$ (6-12$\times10^{9}$) matches the GB-effective generation rate of the 35 Gy/min calibration, and the predicted room-temperature GB resistance ratio is 110 (70-170) at $10^{9}$ and 970 (600-1500) at $10^{10}$ cm$^{-2}$s$^{-1}$, falling to 2 at 61 (55-68) and 81 (73-92) $^\circ$C. The neutron case differs from gamma irradiation in three respects: capture events are discrete, so the continuous-source approximation depends on the unmeasured trapped-charge lifetime; self-shielding (mean free path 0.27 mm) makes the response thickness dependent; and capture photons absorbed in the pellet add a gamma term comparable to the local term for pellets of 0.3 mm or more. The intervals are conditional on the model and exclude its structural error. The conditions under which the prediction can be tested are given.
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Materials Science

Lattice dynamics of disordered phases of silicon and spatially resolved computations of thermal conductivity

The lattice dynamics of disordered systems (amorphous solids, polymers and glasses) are often distinct from crystalline analogues. Examples include the "two-level systems" and the Boson peak. Here, we show that even the venerable material amorphous silicon offers new wrinkles: (1) realistic networks studied with DFT-quality interatomic potentials show the existence of harmonic modes exhibiting anomalously large root-mean-square variation in atomic positions, and (2) these dynamics determine the processes of heat transport. We correlate the atomic dynamics with transport using the site-projected thermal conductivity [C. Ugwumadu et. al Phys. Status Solidi B 263, e202500316 (2026)], and conjecture that these observations are relevant to other disordered systems.
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All authors A. Gautam, C. Ugwumadu, L. A. M. Rosset, R. M. Tutchton, S. Nakhmanson, D. A. Drabold

Materials Science

Surface Physics of Low-Dimensional Pnictogen Chalcohalides and Its Impact on Photovoltaic Technologies

Low-dimensional pnictogen chalcohalides (MChX; M = Bi, Sb; Ch = S, Se; X = I, Br) are promising non-toxic semiconductors for solar energy conversion, yet the power conversion efficiencies of MChX solar cells remain below 10%, far from their Shockley-Queisser limit of $\sim$30%. Efficient charge extraction depends critically on the band-edge alignment between the absorber and the charge-selective contacts, which is a surface property. Here, we combine first-principles calculations with device-level modelling to investigate the surface energetics and band alignments across the MChX family. An exhaustive sampling of crystal orientations, including low-symmetry facets, identifies the (011) and (010) surfaces as the most stable terminations in all eight compounds. Their formation energies differ by only $\approx 0.01$-$0.03\mathrm{J\,m^{-2}}$, yet their band edges are shifted rigidly with respect to each other by up to $0.8$eV. Drift-diffusion simulations of BiSBr show that the coexistence of such facets can reduce the open-circuit voltage by up to $0.6$V, even in an otherwise ideal, defect-free absorber. Surface orientation thus emerges as a hidden design parameter for charge extraction. This study may help to explain the gap between the theoretical and experimental efficiencies of MChX solar cells, and it provides new design principles for MChX-based photovoltaic and photocatalytic technologies.
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All authors Cibrán López, David Rovira, Álex Jiménez-Arguijo, Zacharie Jehl, Edgardo Saucedo, Claudio Cazorla

Materials Science · Cross-listed from physics.geo-ph

Quantification of plastic deformation in anorthite using micropillar compression

Plagioclase is the most abundant mineral group of the crust and will therefore either control or strongly influence crustal rheology. Yet, we still know little about crystal plasticity in plagioclase as brittle deformation dominates under most laboratory conditions. To overcome past challenges in quantifying crystal plastic deformation in plagioclase, we used micropillar compression to quantify the strength of specific slip systems as well as the stresses necessary for mechanical twinning in anorthite. Pillars with diameters of around 1 micrometre were milled from three differently oriented cuts of the same anorthite single crystals using focused-ion beam. Uniaxial deformation of 36 pillars in total was then conducted inside a scanning-electron microscope under either 25, 300, or 800 degrees Celsius. Most pillars were deformed with a constant displacement rate that corresponds to a strain rate of around 0.001 1/s on the pillars. We find that the critical resolved shear stress (CRSS) for mechanical (pericline) twinning lies at around 300 MPa and is, as expected from previous studies on other materials, insensitive to changes in temperature or strain rate. Pillar deformation in crystals oriented to activate slip exhibit a strong decrease in yield stress with increasing temperature. Among the deformation mechanisms active during pillar deformation, twinning is the easiest under the applied conditions, followed by slip on (011)[100] regardless of temperature. Slip on (011)[0-11] or (0-11)[011] is consistently the hardest mechanism to activate in our anorthite pillars.
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All authors Sarah Incel, Chunhua Tian, Anja Schreiber, Vladimir Roddatis, Sandra Korte-Kerzel

Materials Science

Universal orbital-coupling rules for hydrogen-defect interactions in bcc metals

Hydrogen-defect interactions control the performance of body-centered-cubic (bcc) metals. However, the complex variations among defects lead to various empirical models that lack transferability across defects. Here, we propose an orbital-coupling model, built on coordination number and interatomic distance, that quantifies the H solution energetics across nanovoids, vacancy loops and grain boundaries in bcc metals, and even predicts the potential-energy surfaces of H at nanovoids. Our model reveals an unconventional s-d coupling rule in the confined environment of defects: H-metal interactions exhibit a unique coordination-dependent law, whereas H-H interactions, deviating from the usually speculated s-s coupling, acquire the distance-decay law of H-metal coupling. This unusual rule proves essential to reproduce the experimentally observed bimodal profile of H desorption. Our electronic-structure-origin, unified model is thus crucial to understanding the nature of chemical bonds under constraint and engineering the H-tolerant materials.
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All authors Qianxi Zhu, Hao-Xuan Huang, Zichen Zhang, Hong-Bo Zhou, Wang Gao

Materials Science

Solphin: Photovoltaic efficiency analysis for bulk materials using Python

In the development of photovoltaic materials, computational simulation has become a important tool for reducing the time and cost of exploring novel materials, as well as providing insights that help drive improvements in efficiency through increasing fundamental understanding. We present Solphin, a Python package for the generation, post-processing and analysis of photovoltaic calculations from periodic solid state Density Functional Theory. We include the ability to calculate the photovoltaic Figure of Merit, detailed balance and spectroscopic limited maximum efficiency, alongside other analysis methods. Solphin has been built to improve the access, reproducibility and ease of evaluating the photovoltaic potential of a material in an efficient and user-friendly manner.
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All authors Philippa U Cox, Peter P Russell, Andrea Crovetto, Alexander G Squires, Louie Slocombe, David O Scanlon

Materials Science

Screening of tensor properties by magnetic point group symmetries: The PythMPG code package

Understanding the symmetry requirements that permit specific phenomena or physical effects is crucial in condensed matter physics for identifying candidate materials that exhibit one or more of these effects. To this end, screening tensor properties based on (magnetic) point-group symmetries is of particular interest. Here, we present the PythMPG code package, a tool designed for this purpose. Inspired by the MTENSOR utility of the Bilbao Crystallographic Server, PythMPG performs symmetry analysis in a self-contained way to determine which tensors, characterized by their Jahn symbols, are allowed for each magnetic point group and how many symmetry-allowed independent components each tensor possesses. We describe the structure of the code and present some illustrative examples.
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All authors Andrea Urru, Turan Birol, Trey Cole, David Vanderbilt

Materials Science

Origins of Universal Machine Learning Force-Field Errors in Multicomponent Materials

Universal machine learning force-field generalization to multicomponent environments generated by compositional design remains insufficiently assessed. We construct a benchmark of 7,599 multicomponent configurations inspired by high-entropy design, elemental substitution and anion mixing. Eleven pretrained models are evaluated against density functional theory for energies, forces and stresses, with assessment extended to elastic, vibrational and adsorption-related properties. Force errors are analysed through training-reference coverage, local geometric heterogeneity, distance directionality and elemental response. Distances to training-reference environments reveal a qualitative association between coverage differences and increasing errors, while substantial variation remains at similar distances. Higher-error groups show greater local geometric heterogeneity, although OMat24 provides broad coverage of these environments. Relative to training-reference pair medians, errors remain low near the median, rise steeply on the compression side and increase more weakly on the extension side. After matching element pairs and absolute distance deviations, compression-side force errors are 1.81-1.95 times extension-side errors. Model-predicted pairwise interaction curves show greater curvature under compression. Fitting difficulty in independent elemental systems correlates with electronic band-energy responses to atomic displacements and Fermi-level shifts, and a similar pattern is observed in multicomponent systems. In parameter-matched comparisons, spherical-harmonic representations with maximum degrees of 2 and 4 lower test force errors for 38 and 40 of 43 elements, respectively, while differences in elemental difficulty remain. These findings inform force-field selection for experimental compositional design and identify targets for training-data sampling and model representations.
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All authors Hongwei Du, Dingyang Lv, Baole Wei, Yu Ren, Feng Yu, Xin He, Bonan Zhu, Jiahui Liu, Yongda Huang, Yongheng Li, Jianjun Liu, Siqi Shi, Hong Wang, Ziheng Lu

Materials Science

Electronic Properties of Ladder-Type Phenylenes Studied by Thermally-Assisted-Occupation Density Functional Theory

Accurate prediction of the electronic properties of extended $\pi$-conjugated systems with radical character remains a major theoretical challenge. To overcome this challenge, thermally-assisted-occupation density functional theory (TAO-DFT) has been developed in recent years. In this study, we employ TAO-DFT to systematically explore the electronic properties of ladder-type phenylenes ($n$-LPs), containing $n$ linearly fused four-membered carbon rings. Our calculations reveal that all investigated $n$-LPs (with $n$ = 1 ~ 40) possess singlet ground states. With increasing $n$-LP length, we observe a transition from the nonradical character of shorter $n$-LPs to the polyradical character of longer $n$-LPs. Notably, we identify a distinct damped periodic oscillation in the radical character of $n$-LPs, featuring highly correlated hotspots at specific lengths ($n = 3k - 1$, where $k$ are positive integers). The real-space representation of active orbitals confirms this global electronic behavior is governed by the intrinsic structural periodicity and completely delocalized nature of the active orbitals along the central ladder framework. These findings provide fundamental insights into the size-dependent electronic properties of $n$-LPs, guiding their rational design for future nanomaterial applications.
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Materials Science

Anomalous Hall enhancement in fully compensated non-collinear antiferromagnetic Cr-doped Mn3Sn

The non-collinear antiferromagnet (AFM), Mn3Sn, exhibits ultrafast spin dynamics and negligible stray fields, making it a promising candidate for fast and energy-efficient spintronic devices. However, its practical applications remain limited by the relatively small Hall response compared with ferromagnets. Here, we demonstrate through both first-principles calculations and experiments that Cr-doping is a promising strategy to enhance the anomalous Hall transport in Mn3Sn without breaking the antiferromagnetic order. Our first-principles calculations reveal an effective Cr-doping window that enhances the anomalous Hall conductivity while largely preserving the host coplanar inverse triangular AFM order. Berry curvature and Wannier Hamiltonian analyses further reveal that Cr substitution amplifies the pre-existing Berry curvature hotspots through coordinated changes in the energy alignment, local interband gap, and Mn-derived orbital weight of the relevant bands. Experimentally, we have found that Cr doping not only supports our computational predictions (enhancement of the anomalous Hall conductivity), but also suppresses the transition to helical or spin-glass phases at low temperatures. These findings demonstrate that Cr-doping is an effective strategy for stabilizing the AFM order while simultaneously improving the anomalous Hall transport properties over a wide temperature range in Mn3Sn.
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All authors Ying Zhang, Xin Chen, Hang Xie, Ziyan Luo, Yihong Wu, Lei Shen

Materials Science

Ab-initio Investigation on h-Be3N2 Monolayer for Photocatalytic Hydrogen Evolution Reaction and Oxygen Evolution Reaction

In this work, we have systematically investigated the structural stability, electronic properties, and photocatalytic performance of the 2D h-Be3N2 monolayer for water splitting application, utilizing a first-principles density functional theory. Electronic structure calculations based on the PBE functional reveal that h-Be3N2 is a direct band-gap semiconductor with a band gap value of 1.74 eV, making it well suited for visible-light-driven photocatalysis. Furthermore, the alignment of band-edges illustrates that h-Be3N2 has suitable redox potential that facilitate overall photocatalytic water splitting in neutral and alkaline environment. Conversely, in acidic condition, the position of valence band is an adequate to enable the OER, thereby leading to photocathodic behavior. At neutral pH, the HER process is still possible with the application of an external potential of 0.77 V. For the OER process, it is thermodynamically favourable only under strongly alkaline conditions, while an external potential of 0.43 V is needed to promote the reaction at neutral pH. These results clearly underscore the significant impact of solution pH and photogenerated charge carriers on the photocatalytic effectiveness of the h-Be3N2 monolayer. Furthermore, the study of H coverage indicates that the amount of H that adheres to the surface has a considerable impact on the efficiency of the HER in h-Be3N2. The favourable photocatalytic capabilities of the h-Be3N2 monolayer imply that it might be a viable option for upcoming solar-powered green hydrogen generation and may assist in realizing the goals of the National Green Hydrogen Mission by facilitating effective and sustainable hydrogen production.
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