Materials Science · Cross-listed from cs.LG
Geometry-free prediction of inertial lift forces in microfluidic devices using deep learning
Jesse Ward-Bond, Ali Mashadian, Timothy C. Y. Chan et al. (+1 more)
Inertial microfluidic devices (IMDs) offer low-cost, high-throughput alternative techniques for many traditional particle- (or
cell-) manipulation tasks, but simulating them requires being able to predict particle migration, and thus particle lift forces, under a variety of possible channel geometries. Recent work has demonstrated that machine learning models can be used to drastically speed up these numerical simulations, but doing so required training individual models for every unique channel cross-section type (e.g., rectangular, triangular) – shifting the burden from the simulation step to the training step. In this paper, we develop a novel approach for predicting particle lift forces that contains no explicit
geometric parameters. We train a neural network model using a new parameter set and show that while it performs comparably to existing models on channel geometries in the training set, it is able to generalize to unseen channel geometries far more effectively. We show that the lift force model developed herein can be easily transferred to particle tracing simulation software, where it is capable of predicting particle migration patterns consistent with the literature across a variety of channel designs.
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All authors Jesse Ward-Bond, Ali Mashadian, Timothy C. Y. Chan, Edmond W. K. Young
Materials Science · Cross-listed from physics.flu-dyn
Effects of temperature-dependent material properties in coldwater Rayleigh-Bénard convection
Gustavo Estay, Daisuke Noto and Hugo N. Ulloa
Water exhibits an anomalous nonlinear density equation of state (EOS) as it approaches freezing, along with an increase in viscosity ($\mu$) and a decrease in thermal conductivity ($k$). Here we ask: how do these temperature-dependent material properties affect thermal convection in coldwater? We examine these effects within the canonical Rayleigh-Bénard convection (RBC) system, performing direct numerical simulations with coldwater between $0^{\circ}$C and the temperature of maximum density $3.98^{\circ}$C. To disentangle the effects of these properties, we consider two main cases: RBC with a quadratic EOS and constant $\mu$ and $k$; and RBC with a quadratic EOS and temperature-dependent $\mu(T)$ and $k(T)$. We show that the most significant consequence is a shift in the mean fluid temperature relative to `standard RBC'. The nonlinear EOS and the temperature-dependent $\mu$ and $k$ drive this shift in opposite directions, with the former dominating and producing a net decrease in the mean temperature. This decrease varies with the Rayleigh number $Ra$, reaching up to $0.08^{\circ}$C at $Ra=10^{8}$. Additionally, the onset of convection is affected, but the influence from the EOS and $\mu(T)$ and $k(T)$ compensate, resulting in a negligible net effect. Despite these changes, the Nusselt and the Reynolds numbers follow classical scalings in all cases. Our results establish how the anomalous material properties of coldwater affect local and global features of convection, evidencing the implications of model selection for studies of cryospheric water bodies.
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Materials Science · Cross-listed from cond-mat.soft
Entropic Trapping of Hard Spheres in Spherical Confinement
Praveen K. Bommineni, Junwei Wang, Nicolas Vogel et al. (+1 more)
Monodisperse spherical colloidal particles confined within emulsion droplets can crystallize into icosahedral clusters. Experimentally it was observed that a few large colloidal particles added as defects preferentially migrate to the vertices of the icoshedral clusters. To understand this structure formation phenomenon, we simulate the confined self-assembly of hard spheres in the presence of a small number of larger particles. The results demonstrate that large spheres are significantly influenced by concentric shells of small spheres near the crystallization transition. Entropic forces drive the large spheres to the cluster surface, where they settle into free energy minima at the icosahedron vertices. Notably, the addition of twelve large spheres results in the formation of a perfect icosahedral frame. Free energy calculations via umbrella sampling are used to quantify this process and show that both the migration to the cluster surface and the trapping at the vertices with trapping strength of multiple $k_\text{B}T$ results from free energy minimization. Moreover, our study reveals that the crystallization pathway and dynamics of large spheres are consistent across different systems, suggesting robustness of entropic trapping.
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All authors Praveen K. Bommineni, Junwei Wang, Nicolas Vogel, Michael Engel
Materials Science
Visualizing Crystallization Dynamics and Transformation Pathways of Disordered Rocksalt Oxides During Thermally Activated Sol-Gel Synthesis
Diyi Cheng, Tim Kodalle, Anika T. Promi et al. (+7 more)
Sol-gel synthesis is a wet-chemical processing route for the fabrication of functional materials offering control over composition, morphology, and microstructure at relatively low processing temperatures compared to conventional solid-state synthesis methods. While the sol-gel process initiates with intermixed molecular precursors, the transformation pathways at the early nucleation stage are insufficiently understood. Here, the chemical and structural transformation of disordered rocksalt (DRX) Li1.2Mn0.4Ti0.4O2 (LMTO), a promising cathode material for lithium batteries, is studied by multiscale characterization tools. In situ heating transmission electron microscopy (TEM) using a
liquid cell visualizes and identifies crystallization pathways at nanoscale. While some regions follow a classical multi-step transition through thermodynamically stable intermediates, others exhibit a kinetic shortcut in which intermediate nanocrystals dissolve into a localized amorphous
matrix that directly precipitates the DRX structure. Macroscale FTIR corroborates the findings to be related to chemically distinct microenvironments in the gel precursor, with transition metal ions more strongly incorporated into the acetate-coordinated network than lithium. Although in situ heating TEM captures diverse local transformation pathways, in situ SXRD indicates that the macroscopic transformation proceeds predominantly through spinel LMTO and lithium titanite intermediates toward DRX-LMTO. The findings shed light on the spatiotemporal chemical and structural transformations in sol-gel derived DRX-LMTO materials, and call for fine tuning of such sol-gel chemistries to manipulate the crystallization pathways and achieve target material homogeneity more efficiently.
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All authors Diyi Cheng, Tim Kodalle, Anika T. Promi, Ansuman Halder, Raphael F. Moral, Madeline Grass, Venkata S. Avvaru, Haegyeom Kim, Carolin M. Sutter-Fella, Haimei Zheng
Materials Science
Trillion-atom molecular dynamics simulations with ab initio accuracy
Pengfei Suo, Wudi Cao, Xingxing Wu et al. (+14 more)
Material properties are fundamentally dictated by multiscale phenomena, which often reach mesoscale in size. The {\mu}m mesoscale is also the size which can be observed directly under an optical microscope, bridging the atomistic microscopic description with the continuous model macroscopic world. In this work, we report an unprecedented molecular dynamics (MD) simulation comprising 1.62 trillion atoms. Utilizing the neuroevolution potential (NEP) framework, we attained ab initio accuracy on China's New-generation Intelligent Supercomputer. Our implementation achieves a time-to-solution (s/step/atom) 100 times faster than previous state-of-the-art machine learning force field simulations, and 1,000 times faster than the Gordon Bell Prize-winning application from six years ago. Furthermore, we demonstrate an 86.9% weak scaling efficiency from a single GPGPU to 45,000 GPGPUs. These results redefine atomistic simulation boundaries, enabling direct mesoscopic modeling with
quantum-level precision.
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All authors Pengfei Suo, Wudi Cao, Xingxing Wu, Wenjie Zhang, Zheyong Fan, Shuanghan Xian, Rui Wang, Cheng Qian, Chao Liang, Qinghong Yuan, Xiaoshuang Chen, Pengfei Guan, Jingde Bu, Hongzhen Tian, Yanjing Su, Feng Ding, Lin-Wang Wang
Materials Science
Improved Electrochemical Performance and Diffusion kinetics by Boron-doping in Na$_{0.66}$Mn$_{0.8}$Fe$_{0.2}$O$_{2}$ Layered Cathodes for Sodium-Ion Batteries
Jayashree Pati, P. Senthilkumar, Deepak Seth et al. (+6 more)
We report the electrochemical investigation and study the
diffusion kinetics of boron doped Na$_{0.66}$Mn$_{0.8}$Fe$_{0.2}$O$_{2}$ (B-NMFO) cathode materials for sodium-ion batteries. Notably, the B-NMFO cathode exhibits improved specific capacity of 163 mAh g$^{-1}$ as compared to 133 mAhg$^{-1}$ at 0.1~C for the NMFO cathode. Further, we observe better capacity retention of 70% for B-NMFO as compared to the NMFO (60%) at 1 C after 200 cycles, indicating high structural stability due to the presence of strong B-O bonds. The
diffusion coefficient evaluation through galvanostatic intermittent titration technique and cyclic voltammetry, which is found to be in the range of 10$^{-8}$–10$^{-10}$ cm$^{2}$s$^{-1}$. Interestingly, the temperature dependent distribution of relaxation time (DRT) analysis provides a clear understanding about the individual physical processes occurring at different time domains during the electro-chemical testing. Moreover, density functional theory is employed to determine the energetics and the electronic properties of B-NMFO, which suggests that the interstitial tetrahedral sites, especially those next to vacancies, are the dominant incorporation path ways for B in the host structure. Additionally, classical molecular dynamics (MD) simulations are applied to gain insights into the Na-ion transport properties in the bulk structures cathode materials.
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All authors Jayashree Pati, P. Senthilkumar, Deepak Seth, Riya Gulati, Manish Kr. Singh, Madhav Sharma, Anita Dhaka, M. Ali Haider, Rajendra S. Dhaka
Materials Science
Bottom-up realization of a type-II organic-TMD heterointerface: Pentacene on monolayer WS2
Michele Capra, Christian S. Kern, Mira S. Arndt et al. (+11 more)
Stacked van der Waals
heterostructures based on transition metal dichalcogenides (TMDs) exhibit a rich variety of exotic interfacial phenomena. Substituting one component with an organic
semiconductor (OSC) enables the design of hybrid
heterostructures with tunable functionalities for optoelectronic, photovoltaic, and spintronic applications. In this work, exploiting scanning tunneling spectroscopy (STS), photoemission orbital
tomography (POT) and G0W0 electronic structure calculations, we experimentally and theoretically demonstrate the self-assembly of an ordered single layer of pentacene (5A) above monolayer WS2, exhibiting a type-II (staggered) band
alignment in the hybrid 5A/WS2 interface. Central to this result is the synthesis of extended, atomically flat WS2 - an essential prerequisite for a highly ordered and electronically homogeneous OSC/TMD interface - which can only be reliably achieved via bottom-up growth, most notably molecular beam epitaxy (MBE). We realize this by leveraging Au(111) as an atomically clean and conductive sample for epitaxial growth - a necessary requirement for reliable and comparable STS/POT characterizations. The high quality of the synthesized
heterostructure, together with its type-II band
alignment, establishes pentacene/WS2 as a model system for orbital-resolved studies of charge transfer, energy-level renormalization, and non-
equilibrium interfacial processes in hybrid organic-inorganic-2D
heterostructures.
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All authors Michele Capra, Christian S. Kern, Mira S. Arndt, Karl J. Schiller, Max Niederreiter, Francesco Presel, Iolanda Di Bernardo, Marco Gruenewald, Torsten Fritz, Stefan Tappertzhofen, Martin Sterrer, Peter Puschnig, Mirko Cinchetti, Giovanni Zamborlini
Materials Science
A step-by-step workflow to extract the genuine circular dichroism of thin films
Franziska Schölzel, Arina Narudin, Aleksandra Ciesielska et al. (+5 more)
Circular Dichroism (CD) spectroscopy has evolved from a purely solution based method towards a powerful tool in the analysis of
chiral thin films. Although a straightforward technique, the genuine CD signal is often accompanied by artifacts arising from optical anisotropy and instrumental imperfections. This tutorial presents a two-step workflow that reliably isolates the orientation invariant CD response for anisotropic thin films by combining azimuthal sample rotation with sample flipping. For this purpose, a home-built sample stage was developed, which enables systematic suppression of many anisotropy-induced artifacts in commercial CD spectrophotometers. Both a detailed description of the setup itself as well as the needed python script are provided. The reliability of the workflow is demonstrated on two selected samples from different research fields:
chiral molecules attached to metallic surfaces as well as metal halide perovskites incorporating
chiral spacer molecules
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All authors Franziska Schölzel, Arina Narudin, Aleksandra Ciesielska, Alexander Ehm, Dietrich R.T. Zahn, Wouter van Gompel, Simon Kahmann, Georgeta Salvan
Materials Science
Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors
Ananth Dodabalapur, Chankeun Yoon and Xiao Wang
A consistent and widely accepted physical basis for interpretation of charge transport in amorphous
oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in crystalline order, dimensionality, and the effects of a significant density of traps. The overarching theme of this paper is to build and justify a much-needed conceptual framework for describing advanced AOS transistors, particularly those with very small channel lengths. Combining new work and selecting prior research results on charge transport and device physics together with literature reports from various groups on morphology, physical properties, electronic structure and percolation effects, the main evidence that is available in support of a trap-influenced band transport picture in quasi-2-dimensional channels in high mobility AOS FETs is presented.
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Materials Science · Cross-listed from physics.chem-ph
Errors that matter: Uncertainty-aware universal machine-learning potentials calibrated on experiments
Matthias Kellner, Teitur Hansen, Thomas Bligaard et al. (+2 more)
Machine-learning models of atomic-scale interactions achieve the accuracy of the
quantum mechanical calculations on which they are trained, but at a dramatically lower computational cost. Their predictions can be made trustworthy by uncertainty quantification techniques that estimate the residual error relative to their reference. These errors, however, do not include uncertainty contributions from the approximations inherent in the electronic structure calculations, which are often the main source of discrepancy with empirical observations. We construct an ensemble of ML potentials trained on multiple electronic-structure references and calibrate it against experimental data on cohesive energies, atomization energies,
lattice constants and bulk
moduli of simple materials and molecules, similar to the uncertainty-aware functional distribution approach. The resulting ensemble of models, which we call PET-UAFD, can be used to simulate matter across a wide range of compositions and thermodynamic conditions. By comparison with experimental measurements of the density and structure of
liquids, we demonstrate that, even outside the static properties on which it was calibrated, PET-UAFD enables predictions that are as accurate against experiments as the best available electronic-structure reference and that the spread in the ensemble can be used to assess the reliability of such predictions. We also introduce the PET-EXP protocol that uses shallow ensembles and statistical reweighting techniques to provide accurate estimates of uncertainty relative to experimental measurements at virtually no additional cost over a simulation based on a single conventional ML potential. Ultimately, this approach provides a practical and inexpensive approach to elevate machine-learning potentials from faithful interpolators of approximate theories to genuinely predictive tools anchored in experimental reality.
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All authors Matthias Kellner, Teitur Hansen, Thomas Bligaard, Karsten Wedel Jacobsen, Michele Ceriotti
Materials Science
Step- and terrace-resolved crystal truncation rod scattering from vicinal surfaces under coherent heteroepitaxy
Junlin Wu, Erqi Xu, Qihui Lin et al. (+4 more)
We develop a general theory of
crystal truncation rod (CTR) scattering from vicinal surfaces with a coherently strained heteroepitaxial film. The formalism incorporates film-induced interference fringes, full elastic
lattice distortion, terrace ordering, surface reconstruction, and real-time growth
evolution within a unified description. Comparison between Nagai model and elasticity-based model shows that the
lattice tilt is nearly identical in the two approaches, whereas the elasticitybased model predicts an additional triclinic deformation arising from shear strain. This deformation has little effect on specular CTRs but strongly modifies non-specular rods, making them a sensitive probe of the full elastic state of coherent epitaxial films. We further show that the characteristic sensitivity of vicinal CTRs to terrace ordering, surface reconstruction, and terrace-resolved compositional modification remains robust in the presence of a coherent film. Representative calculations for InGaN/GaN demonstrate that the framework enables quantitative interpretation of both static and real-time CTR measurements and provides access to step- and terrace-resolved structural and kinetic information during heteroepitaxial growth.
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All authors Junlin Wu, Erqi Xu, Qihui Lin, Jiaqing Yue, Jiale Wang, Zihao Xu, Guangxu Ju
Materials Science
Electronic and optical properties of arsenic monolayers: from planar honeycomb to the puckered phase
Niloufar Dadkhah and Walter R. L. Lambrecht
Group-V monolayer materials exhibit intriguing electronic and optical properties, influenced by their unique
crystal symmetries and structural phases. In this work, we study arsenic monolayers, investigating their electronic and optical properties across different phases, including planar, and puckered forms, using density functional theory (DFT) and quasi-particle self-consistent $GW$ (QS$GW$) methods, with and without vertex contributions (ladder diagrams) and examine the effects of
spin-orbit coupling and the orbital composition of the bands. The Bethe-Salpeter equation (BSE) method is used to study the optical response and the band origin of the low lying
excitons is determined. The gradual transformation from the puckered $\alpha$-phase to the flat honeycomb structure is studied under biaxial strain and the
evolution of the band structure and optical response is described in terms of band inversions of bands of different orbital character.
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Materials Science · Cross-listed from quant-ph
Isotopically enriched epitaxial CaWO$_{4}$ thin films for Er$^{3+}$ spin-photon quantum interfaces
Hanlin Tang, Kidae Shin, Ashwin K. Boddeti et al. (+10 more)
Rare earth ion (REI)-doped
oxide thin films are attractive for the application of
quantum interconnects due to their stable optical levels and scalability$^{1-3}$. Among them, Er$^{3+}$ doped CaWO$_{4}$ is promising because it possesses narrow optical linewidth transitions and a long
spin coherence time$^{4-6}$. The electron
spin coherence is limited at high temperatures by paramagnetic
impurities and by the presence of the 14.3% $^{183}$W
nuclear spin. To further increase the
spin coherence time at millikelvin temperatures, where the paramagnetic
impurities are frozen out, our approach is to synthesize chemically and isotopically purified thin films as a host material. We first grow non-isotopically enriched Er$^{3+}$ doped CaWO$_{4}$ thin films, which exhibit a 214(13) MHz photoluminescence (PL) inhomogeneous linewidth, indicating the thin film has high crystalline quality. We then grow isotopically enriched CaWO$_{4}$ thin films using an isotopically purified $^{186}$WO$_{3}$ source. Time of flight secondary ion mass spectrometry (ToF-SIMS) was used to measure the relative concentration of W isotopes. $^{183}$W, the only W isotope that has a net
nuclear spin and is the major cause of
spin decoherence, was at a relative abundance of 1.2%, a factor of 10 lower than natural abundance. We also observed PL emission from single ions after integrating nano-photonic devices with the thin film. These results establish isotopically engineered CaWO$_{4}$ thin films as a promising platform for future studies of
nuclear-
spin-limited coherence and for scalable rare-earth-ion-based
quantum nanophotonic devices.
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All authors Hanlin Tang, Kidae Shin, Ashwin K. Boddeti, Sebastian P. Horvath, Adam Turflinger, Joseph Alexander, Jeffrey A. Dhas, Zihua Zhu, Shuhang Pan, Jeff D. Thompson, Yingge Du, Frederick J. Walker, Charles H. Ahn
Materials Science
Mapping Reversal Pathways and Interaction Fields in Artificial Spin Ice
Brindaban Ojha, Matías P. Grassi and Vassilios Kapaklis
In artificial
spin ice (ASI),
magnetic interactions between nanomagnets determine both the stable states and the switching pathways under an applied field. Here, first-order reversal curve (FORC) measurements are used to map how these interactions govern magnetization reversal in square arrays as the element shape and spacing are varied. The FORC diagrams show that some geometries reverse more uniformly, whereas others exhibit broader, more asymmetric responses, indicating stronger interaction effects and more complex reversal pathways. Combined FORC analysis and micromagnetic simulations also capture subtle changes in internal magnetization textures during switching, linking local behavior within individual elements to collective behavior across the array. These results establish FORC as a practical tool for mapping and engineering interaction landscapes, with direct relevance to reconfigurable
magnetic reservoirs and neuromorphic functionality.
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Materials Science · Cross-listed from physics.app-ph
Complementary-polarity double-layer LiTaO3 resonators for symmetry-selective SH2 excitation with ultrahigh electromechanical coupling (kt^2 = 25.7%)
Hao Yan, Zhen-hui Qin, Zhi-Wen Wang et al. (+7 more)
We report a structurally simple double-layer lithium tantalate (LiTaO3) bulk acoustic resonator that enables
symmetry-selective excitation of the second-order thickness-shear (SH2) mode with ultrahigh electromechanical coupling. Two 31 deg Y-oriented single-
crystal LiTaO3 films are rotation-bonded with complementary polarization (+X/-X) and driven by a longitudinal electric field. Matching between the effective piezoelectric
symmetry and the SH2 mode yields an effective electromechanical coupling coefficient of kt^2 = 25.7% at 5.24 MHz. To our knowledge, this is the highest kt^2 reported for a LiTaO3 resonator architecture to date. The measured response is dominated by the target SH2 mode, with only weak parasitic features in the operating band. The structure is also tunable: the resonance frequency and coupling can be adjusted through
geometric parameters while maintaining stable modal behavior, indicating good process tolerance. Finite-element analysis further suggests straightforward frequency scaling beyond 5 GHz by reducing the film and electrode thickness while preserving approximately 25% kt^2. In addition, introducing a SiO2 compensation layer is predicted to improve the temperature coefficient of frequency to approximately -25 ppm/deg C. These results establish complementary-polarity double-layer LiTaO3 as a practical platform for high-coupling, spurious-suppressed acoustic resonators and provide a scalable route toward wideband ultrasonic resonators, filters, and related transducers.
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All authors Hao Yan, Zhen-hui Qin, Zhi-Wen Wang, Shu-Mao Wu, Chen-Bei Hao, Hua-Yang Chen, Sheng-Nan Liang, Ke Chen, Si-Yuan Yu, Yan-Feng Chen
Materials Science
Atomistic Mechanisms of Temperature-Dependent Ion Track Formation in Gallium Nitride under Swift Heavy Ion Irradiation
Jiayu Liang, Shaowei He, Wenlong Liao et al. (+8 more)
The radiation tolerance of gallium nitride under extreme conditions is critical for its deployment in next-generation electronic and optoelectronic devices, yet the microscopic mechanisms governing swift heavy ion induced damage at elevated temperatures remain poorly understood. Therefore, this study employs a coupled approach including the two-temperature model and molecular dynamics simulations to resolve the entire processes of ion track generation induced by swift heavy ions irradiation across a wide temperature range. A temperature-driven morphological transition of ion tracks, evolving from discontinuous segments to continuous tracks composed of isolated nanobubbles, and ultimately to fully continuous channels is observed. Under lower electronic stopping loss of 430 MeV Kr irradiation, increasing temperature significantly enhances track visibility, enlarges track radii and promotes nanobubble formation. For higher electronic stopping conditions of 1171 MeV Ta irradiation, continuous ion tracks consisting of discontinuous nanobubbles (~1.5 nm radius) emerge already at 300 K, followed by a thermally activated transition into continuous channels with further radial expansion. At the atomic scale, SHI irradiation induces decomposition of wurtzite GaN into Ga clusters and N2 molecules along the ion trajectory, with Ga-rich regions and recrystallized wurtzite phases accumulating near bubble interfaces, while N2 preferentially segregates within bubble cores. Additionally, zincblende nanodomains nucleate around ion tracks and exhibit strong spatial correlation with radiation-induced dislocation networks, particularly screw dislocations, providing potential pathways for leakage current and increased susceptibility to single-event burnout.
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All authors Jiayu Liang, Shaowei He, Wenlong Liao, Tan Shi, Hang Zang, Yonghong Li, Xiaojun Fu, Chuanjian Yao, Chaohui He, Jianan Wei, Huan He
Materials Science
Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2
Baichen Lin, Shanquan Chen, Yubo Zhang et al. (+18 more)
Metal-
insulator transitions (MITs) in correlated
oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with
symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original
crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices.
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All authors Baichen Lin, Shanquan Chen, Yubo Zhang, Yangyang Si, Haoliang Huang, Chuanrui Huo, Frans Munnik, Yongqi Dong, Lu You, Jian Shao, Yu-Chieh Ku, Nguyen Nhat Quyen, Aryan Keshri, Zhenlin Luo, Weiwei Zhao, Chun-Fu Chang, Chih-Wei Luo, Sujit Das, Shiqing Deng, Chang-Yang Kuo, Zuhuang Chen