Materials Science
Emerging Ferroelectric Domains: Stacking and Rotational Landscape of MoS2 Moire Bilayers
Anikeya Aditya, Ayu Irie, Nabankur Dasgupta et al. (+3 more)
The structures and properties of moire patterns in twisted
bilayers of two-dimensional (2D) materials are known to depend sensitively on twist angle, yet their dependence on stacking order remains comparatively underexplored. In this study, we use molecular dynamics simulations to systematically investigate the combined effects of stacking order and rotation in MoS2
bilayers. Beginning from five well-established high-
symmetry bilayer stackings, we apply twist angles between 1 and 120 to the top layer, revealing a variety of relaxed moire structures. Our results show that the initial stacking significantly influences the moire domain configurations that emerge at a given twist angle. While all five stacking orders are metastable without twist, they form two moire-equivalent classes- AA/AB and AA',A'B,AB', i.e., for a given twist angle, structures within each class relax to the same moire configuration. Specifically, initial AA and AB stackings give rise to triangular ferroelectric domains near 0+/-3, while AA', A'B, and AB' stackings produce triangular ferroelectric domains near 60+/-3. At precisely 60 and 120 twists, the
bilayers relax to into pure high-
symmetry stackings, highlighting the rotational relationships between these configurations and explaining the shift of 60 in the ferroelectric rotational range. These findings demonstrate the critical role of stacking order in governing the rich moire landscapes accessible in twistronic systems.
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All authors Anikeya Aditya, Ayu Irie, Nabankur Dasgupta, Rajiv K. Kalia, Aiichiro Nakano, Priya Vashishta
Materials Science · Cross-listed from astro-ph.EP
On the discovery of meteoritic mineral Zolenskyite; The artificial origin should not be overlooked
Boutros Pierre Embaid
Recently a new meteoritic mineral, Zolenskyite (Fe0.99Mn0.04Ca0.01Cr1.99S3.98), was discovered from the Indarch meteorite. Zolenskyite was structurally indexed as the monoclinic C2/m CrNb2Se4 - Cr3S4 type structure of synthetic FeCr2S4, with unit
cell parameters a = 12.84(1) Å, b = 3.44(1) Å, c = 5.94(1) Å and e̱ta} = 117(1){\deg}. Zolenskyite was reported as high-pressure phase formed from Daubréelite at high pressures and temperatures in highly shocked regions of the EH parent asteroid. Although this discovery provides valuable information about the origin of meteoritic mineral assemblages, the results and conclusions raise controversies with those reported in previous articles where the synthetic FeCr2S4 was described. In this review, an alternative analysis of the supplementary X-ray data from Zolenskyite was made and yields to the monoclinic I2/m Cr3S4 type structure of synthetic FeCr2S4, with unit
cell parameters a = 5.940 Å, b = 3.440 Å, c = 11.441 Å and e̱ta} = 90.55{\deg}, in agreement with previous results in the literature and differ from those reported above. Regarding the genesis of Zolenskyite and according to solid-state laboratory synthesis, the transformation of cubic FeCr2S4 phase (ideal composition of Daubréelite) to monoclinic FeCr2S4 (ideal composition of Zolenskyite) requires a process whose replication in Shock metamorphism stages is not well established and remains an open issue to address, together with another open issue related to the real composition of meteoritic minerals, with minor and trace metals, which is often overlooked when compared with synthetic ideal compositions. Whatever the results to be obtained by addressing the above open issues, they will shed more light on the genesis of Zolenskyite. In this context, it is worth to promote an open debate about the hypothesis of artificial origin.
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Materials Science
Electron-hole liquid in biological tissues under ultra high dose rate ionizing radiation
Diana Shvydka and Victor Karpov
We develop a quantitative model of ionization processes in biological tissues under Ultra High Dose Rate (UHDR) radiation. The underlying
conjecture is that of electron-hole
liquid (EHL) forming in water based substances of biological tissues. Unlike the earlier known EHL in
semiconductor crystals, the charge carriers here are low mobile due to strong interactions with the background (solvated electrons, etc.); hence, EHL resembling ionic melts. Similar to all ionic systems, the Coulomb coupling makes that EHL energetically favorable that leads to recombination barriers suppressing subsequent structural transformations. In particular, generation of secondary reactive species in such EHL becomes limited translating into reduction of biological damages and tissue sparing effect. We show how these processes are sensitive to the tissue quality and frequency dispersion of the dielectric permittivity. Equations for dose and dose rate defining the sparing thresholds are derived.
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Materials Science
Unveiling the growth mode diagram of GaSe on sapphire
M. Bissolo, M. Dembecki, J. Belz et al. (+10 more)
The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in-situ reflection high-energy electron diffraction (RHEED), in-situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530-650 {\deg}C) and Se/Ga flux ratio (5-110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane
lattice constant of 0.371$\pm$0.001 nm and a partial epitaxial
alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.
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All authors M. Bissolo, M. Dembecki, J. Belz, J. Schabesberger, M. Bergmann, P. Avdienko, F. Rauscher, A. S. Ulhe, H. Riedl, K. Volz, J. J. Finley, E. Zallo, G. Koblmüller
Materials Science
Ultra-transient grating spectroscopy for visualization of surface acoustics
Tomáš Grabec, Pavla Stoklasová, Kristýna Repček et al. (+5 more)
Ultrasonic wave propagation across material surfaces reveals essential information about the materials' elastic behavior. The elastodynamic response of the surface is characterized by the Green's function that fully captures all its direction-dependent and frequency-dependent features. Here we present the first direct experimental visualization of the frequency-domain angular-resolved Green's function, including all its complex details resulting from elastic anisotropy. We achieve this visualization using transient grating spectroscopy (TGS), which is a method otherwise well established for measuring Rayleigh-type surface acoustic waves (SAWs). But here we focus on early-time thermoacoustic phenomena in the TGS experiment, revealing that, along with the transient standing-wave patterns of SAWs, there also emerge oscillations with at least an order of magnitude shorter lifetimes. These oscillations superpose into dynamic displacement patterns that are transient with respect to the classical transient timescales in TGS; the optical diffraction signal from these 'ultra-transient' gratings enables capturing the surface acoustic response with exceptional detail, and the resulting experimental angular dispersion maps strikingly replicate the theoretical frequency-domain Green's functions. By utilizing this feature, ultra-transient grating spectroscopy (UTGS) becomes a powerful tool for detailed contactless characterization of anisotropic solids, opening new pathways for studying single-crystalline or nanostructured materials.
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All authors Tomáš Grabec, Pavla Stoklasová, Kristýna Repček, Jakub Kušnír, David Mareš, Martin Ševčík, Petr Sedlák, Hanuš Seiner
Materials Science · Cross-listed from cond-mat.str-el
Santhosh M, Jorge Dukelsky and Gerardo Ortiz
We present and analyze an exactly solvable interacting fermionic pairing model, which features interactions that entangle states at momenta $\mathbf{k}$ and $-\mathbf{k}$. These interactions give rise to novel correlated ground states, leading to a rich phase diagram that includes superconducting, multiple metallic, and Mott-insulating phases. At finite interaction strengths, we observe the emergence of multiple many-body
Fermi surfaces, which violate Luttinger's
theorem and challenge the conventional Landau-
Fermi liquid paradigm. A distinguishing feature of our model is that it remains
quantum integrable, even with the addition of pairing interactions of various
symmetries, setting it apart from the Hatsugai-Kohmoto model. Our results provide an analytically tractable framework for studying strong correlation effects that give rise to fractionalized excitations and unconventional superconductivity, offering valuable insights into a broad class of integrable many-body systems.
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Materials Science
Near-room-temperature antiferromagnetism in Janus Fe$X$F ($X$ = O, S) monolayers
Xixiang Zhang, Busheng Wang, Yanfeng Ge et al. (+2 more)
Inspired by the recently synthesized hexagonal layered phase of FeF$_2$, we studied the
magnetic properties of the 1T-FeF$_2$ monolayer and its Janus Fe$X$F ($X$ = O, S) derivatives by first-principles calculations. Our results confirm that these materials are
antiferromagnetic semiconductors, and that anion substitution effectively tunes their material properties: the band gap shifts from 3.37 eV (direct, FeF$_2$) to 2.35 eV (direct, FeOF) and 1.13 eV (indirect, FeSF); the
magnetic moment of Fe ions increases; and the Néel temperature ($T_N$) rises dramatically to 248 K (FeSF) and 207 K (FeOF). Janus structures exhibit enhanced
magnetic moment and direct AFM coupling. Under compression, $T_N$ is further optimized to 274 K ($-2$% strain, FeSF) and 244 K ($-5$% strain, FeOF). Both Janus materials retain their semiconducting nature and direction of easy magnetization axis under $\pm5$% strain. This study validates the Janus structure as a viable approach to enhance 2D antiferromagnetism and highlights Fe-based oxyhalides as promising spintronic materials.
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All authors Xixiang Zhang, Busheng Wang, Yanfeng Ge, Yong Liu, Wenhui Wan
Materials Science
Topology and Martensitic Phase Transformations
M. Yin and D. D. Vvedensky
Triply periodic minimal surfaces (TPMS) are discovered to conform to surfaces of given charge density distributions embedded in
crystals [Z. Kristallogr. 170, 138 (1985)]. Based on our previous work [Phys. Rev. Mater. 9, 073802 (2025)], we discovered that
crystals can have surfaces of a given charge density converging to TPMS. We also discovered that end states connected by a martensitic phase transformation should have their corresponding TPMS being topologically equivalent. In this work, we gave an explanation for the topological continuity of a martensitic phase transformation and studied how TPMS indicate whether a non-
magnetic crystal can undergo a martensitic phase transformation or not.
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Materials Science
Weak-anti-localization-to-spin-dependent scattering at a proximity-magnetized heavy metal interface
Hisakazu Matsuki, Guang Yang, Jiahui Xu et al. (+9 more)
A change in a materials electrical resistance with
magnetic field (magnetoresistance) results from
quantum interference effects and, or
spin-dependent transport, depending on materials properties and dimensionality. In disordered conductors, electron interference leads to weak localization or anti-localization; in contrast,
ferromagnetic conductors support
spin-dependent scattering, leading to
giant magnetoresistance (GMR). By varying the thickness of Au between 4 and 28 nm in a EuS/Au/EuS
spin-switches, we observe a crossover from weak anti-localization to interfacial GMR. The crossover is related to a
magnetic proximity effect in Au due to electron scattering at the insulating EuS interface. The proximity-induced exchange field in Au suppresses weak anti-localization, consistent with Maekawa-Fukuyama theory. With increasing Au thickness, GMR emerges along with
spin Hall magnetoresistance. These findings demonstrate
spin transport governed by interfacial exchange fields, building a framework for spintronic functionality without metallic magnetism.
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All authors Hisakazu Matsuki, Guang Yang, Jiahui Xu, Vitaly N. Golovach, Yu He, Jiaxu Li, Alberto Hijano, Niladri Banerjee, Iuliia Alekhina, Nadia Stelmashenko, F. Sebastian Bergeret, Jason W. A. Robinson
Materials Science
Breaking the Sabatier Principle by Dynamic Adsorption-Desorption Decoupling in Electrocatalytic Hydrogen Evolution
Zi-Xuan Yang, Lei Li, Tao Huang et al. (+5 more)
The Sabatier principle establishes a fundamental trade-off in heterogeneous electrocatalysis.In the hydrogen
evolution reaction (HER), this trade-off is manifested by the coupling of Volmer step, which requires strong hydrogen adsorption, with the Heyrovsky/Tafel step, which favors facile desorption, thus giving rise to the classical volcano relationship and limiting activity even at $\Delta G=0$. Here, we demonstrate a ferroelectric platform with dynamic tunability – monolayer GeS$_2$ decorated with transition metal atoms as a proof-of-concept – where polarization-driven surface electronic reconstruction enables real-time modulation of intermediate binding strength, thereby breaking the Sabatier constraint. Reversible control of hydrogen adsorption allows strong H binding to accelerate the Volmer step, followed by weakened adsorption to promote the Heyrovsky/Tafel step.This dynamic adsorption-desorption decoupling not only surpasses the volcano limit to achieve unprecedented HER activity, but also establishes a general paradigm for designing adaptive electrocatalysts capable of reconfiguring under operating conditions.
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All authors Zi-Xuan Yang, Lei Li, Tao Huang, Hui Wan, X.S. Wang, Gui-Fang Huang, Wangyu Hu, Wei-Qing Huang
Materials Science
Near room temperature magnetoelectric response and tunable magnetic anisotropy in the two-dimensional magnet 1T-CrTe2
Fengping Li, Bheema Lingam Chittari, Chao Lei et al. (+1 more)
Magnets with controllable magnetization and high critical temperature are essential for practical spintronics devices, among which the two-dimensional 1T-CrTe2 stands out because of its high experimental critical temperature up to about 300K down to the single layer limit. By using ab initio density functional theory, we investigate the
magnetic properties of monolayer and
bilayer 1T-CrTe2 and demonstrate that the
magnetic properties, such as the magnetocrystalline anisotropy, critical Curie temperature and magnetizations, can be influenced by strain or electric fields.
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All authors Fengping Li, Bheema Lingam Chittari, Chao Lei, Jeil Jung
Materials Science
A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions
Baoyu Wang, Lingrui Zou, Tao Wang et al. (+18 more)
Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine device performances or functionalities. Creating tunable depletion regions with substantially suppressed leakage currents presents huge challenges, but is crucial for heterojunction applications. Here, by using band-aligned p-type SnSe and n-type ferroelectric {\alpha}-In2Se3 as a model, we report near-ideal multifunctional vdW p-n heterojunctions with small reverse leakage currents (0.1 pA) and a desired diode ideality factor (1.95). We realize ferroelectric-tuned band
alignment with a
giant barrier modulation of 900 meV. Based on such tunable heterojunctions, we propose and demonstrate a fundamental different
memory device termed ferroelectric junction field-effect transistor
memory, which shows large
memory windows (1.8 V), ultrafast speed (100 ns), high operation temperature (393 K), and low cycle-to-cycle variation (2%). Additionally, the reliable synaptic characteristics of these
memory devices promise low-power neuromorphic computing. Our work provides a new device platform with switchable
memory heterojunctions, applicable to high performance
brain-inspired electronics and optoelectronics.
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All authors Baoyu Wang, Lingrui Zou, Tao Wang, Lijun Xu, Zexin Dong, Chuan Qin, Xin He, Shangui Lan, Yinchang Ma, Meng Tang, Maolin Chen, Chen Liu, Zheng-Dong Luo, Lijie Zhang, Zhenhua Wu, Yan Liu, Genquan Han, Bin Yu, Xixiang Zhang, Kai Chang, Fei Xue
Materials Science
Resolving the Structural Duality of Graphene Grain Boundaries
Haojie Guo, Emiliano Ventura-Macías, Mariano D. Jiménez-Sánchez et al. (+9 more)
Grain boundaries (GBs) are ubiquitous in large-scale
graphene samples, playing a crucial role in their overall performance. Due to their complexity, they are usually investigated as model structures, under the assumption of a fully relaxed interface. Here, we present cantilever-based non-contact atomic force microscopy (ncAFM) as a suitable technique to resolve, atom by atom, the complete structure of these linear defects. Our experimental findings reveal a richer scenario than expected, with the coexistence of energetically stable and metastable
graphene GBs. Although both GBs are structurally composed of pentagonal and heptagonal like rings, they can be differentiated by the irregular
geometric shapes present in the metastable boundaries. Theoretical modeling and simulated ncAFM images, accounting for the experimental data, show that metastable GBs form under compressive uniaxial strain and exhibit vertical corrugation, whereas stable GBs remain in a fully relaxed, flat configuration. By locally introducing energy with the AFM tip, we show the possibility to manipulate the metastable GBs, driving them toward their minimum energy configuration. Notably, our high-resolution ncAFM images reveal a clear dichotomy: while the structural distortions of metastable grain boundaries are confined to just a few atoms, their impact on
graphene's properties extends over significantly larger length scales.
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All authors Haojie Guo, Emiliano Ventura-Macías, Mariano D. Jiménez-Sánchez, Nicoleta Nicoara, Pierre Mallet, Jean-Yves Veuillen, Vincent T. Renard, Antonio J. Martínez-Galera, Pablo Pou, Julio Gómez-Herrero, Rubén Pérez, Iván Brihuega
Materials Science
Anisotropic Strain Engineering in La0.7Sr0.3MnO3/LaFeO3 Superlattice: Structural Relaxation and Domain Formation
Yu Liu, Thea Marie Dale, Emma van der Minne et al. (+7 more)
Anisotropic strain engineering in epitaxial
oxide films provides new opportunities to control the
antiferromagnetic and structural properties crucial for advancements of
antiferromagnetic spintronics. Here we report on a (La0.7Sr0.3MnO3/LaFeO3)4 superlattice grown on (101)o DyScO3 substrate which imposes significant anisotropic in-plane strain. Reciprocal space mapping reveals selective strain relaxation along the tensile in-plane [010]o axis, while compression along the perpendicular in-plane [-101]o axis remains strained. Scanning precession electron diffraction and higher-order Laue zone analysis show that the relaxation is accommodated by structural domain formation in the LaFeO3 layers, initiating from the second
bilayer and propagating out-of-plane. These domains minimise structural defects and correlate with the substrate step edges. X-ray
magnetic dichroism measurements reveal bulk-like in-plane
antiferromagnetic order with polydomain signature as previously reported. Our findings reveal the presence of structural domains coexisting with
antiferromagnetic polydomain states, showing a strain-domain-magnetism relationship that provides insights for applications of strain engineering in spintronics applications.
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All authors Yu Liu, Thea Marie Dale, Emma van der Minne, Susanne Boucher, Romar Avila, Christoph Klewe, Gertjan Koster, Magnus Nord, Mari-Ann Einarsrud, Ingrid Hallsteinsen
Materials Science
Growth control of highly textured Bi2Te3 thin films by pulsed laser deposition
Damian Brzozowski, Yu Liu, Karola Neeleman et al. (+2 more)
Two-dimensional materials have attracted growing interest due to their unique electronic properties and potential applications in spintronics. Interfacing strongly
spin-orbit-coupled chalcogenides with functional
oxides such as perovskites has a particularly high potential. In this work, highly textured Bi2Te3 thin films were deposited on (111) oriented SrTiO3 by pulsed
laser deposition. We show that, by careful selection of the temperature and pressure of growth, the film's stoichiometry can be manipulated between direct stoichiometry transfer from the target and tellurium-deficient phases. Optimized pulsed
laser deposition enables the growth of films with coalesced, faceted grains with grain sizes reaching up to 430 nm, while preserving crystalline quality comparable to that of molecular-beam-epitaxy-grown films. We show striking differences arising from tuning the
laser's pulsing frequency and fluence, which lead to changes in surface roughness, the film's porosity, and grain boundaries, as well as grain shape. Analysis of cross-sectional transmission electron microscopy images reveals a sharp substrate-film interface without atomic intermixing and without the formation of amorphous intermediate layers. The results demonstrate that pulsed
laser deposition is a viable method for producing high-quality Bi2Te3 thin films and opens the door to the integration of chalcogenides with perovskites with this growth technique.
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All authors Damian Brzozowski, Yu Liu, Karola Neeleman, Magnus Nord, Ingrid G. Hallsteinsen
Materials Science
Electric Polarization-Driven Modulation of Fe Adatoms on Ferroelectric $\alpha$-In$_2$Se$_3$
Monirul Shaikh and Aleksander L. Wysocki
The interplay among structural, electronic, and
magnetic properties of Fe adatoms on the surface of two-dimensional ferroelectric {\alpha}-In$_2$Se$_3$ is investigated using first-principles electronic structure calculations, with a focus on how these properties are modulated by the direction of the electric polarization of the substrate. We identify two competing adsorption sites for Fe adatoms, whose relative stability depends on the adatom concentration and can be reversed by switching the electric polarization of {\alpha}-In$_2$Se$_3$. The calculated energy barrier for thermally activated hopping between these sites is approximately 0.4 eV, corresponding to a blocking temperature of around 100 K. The hybridization between Fe and In$_2$Se$_3$ orbitals strongly depends on the adsorption site and polarization direction, driven by variations in the local adatom geometry. As a result, the electronic configuration of adatom,
magnetic moment, and
magnetic anisotropy exhibit a pronounced site dependence and can be effectively modulated by switching the electric polarization of the In$_2$Se$_3$ layer. In particular, at higher adatom concentrations, an exceptionally large perpendicular
magnetic anisotropy, exceeding 200 meV per Fe atom, emerges for one polarization direction, but is largely diminished when the polarization is reversed. These findings indicate that ferroelectric substrates offer a promising route for voltage-controlled tuning of
magnetic adatom properties via reversible polarization switching.
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