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Physics Condensed Matter Materials Science

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Friday 17 July

Materials Science · Cross-listed from gr-qc

Einstein crystals in Snyder and Snyder-de Sitter noncommutative backgrounds

We investigate the behavior of Einstein crystals in noncommutative backgrounds described by the Snyder and Snyder-de Sitter models. Possible novel effects, which may arise in realistic systems such as diamond crystals, are analyzed within a thermodynamical framework. We show that noncommutativity influences the key thermodynamic quantities, including internal energy and specific heat. These corrections can be directly related to modifications of the underlying uncertainty relations, of the generalized uncertainty principle (GUP) and generalized extended uncertainty principle (GEUP) types.
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Materials Science

Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy

(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially N-stable to metal-stable. Reflection high-energy electron diffraction as well as scanning electron and atomic force microscopy reveal that the first step results in a rough intermediate surface with open pits, whereas the final surface is smooth. The narrow linewidth of the photoluminescence band indicates an excellent compositional homogeneity of the upper layer. Its in-plane lattice constant is determined to be $\approx$3.26 Åfrom X-ray diffraction measurements. This combination of favorable properties makes these layers attractive as pseudo-substrates for the growth of red-emitting (In,Ga)N light-emitting diodes. In particular, the approach presented here does not require any complex external processing and is, thus, scalable and economical.
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All authors Huaide Zhang, Jingxuan Kang, Aidan F. Campbell, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar

Materials Science

Interface-Engineered Giant Multistate Resistance Switching in Altermagnetic CrSb Multiferroic Tunnel Junctions

Altermagnets enable spin-split transport without stray magnetic fields, yet converting their momentum-dependent spin splitting into a strong tunnel-junction response requires interface-selected tunneling channels. Here, using density functional theory combined with nonequilibrium Green's function calculations, we demonstrate giant multistate resistance switching in CrSb/$\alpha$-In$_2$Se$_3$ altermagnetic multiferroic tunnel junctions. The response is governed not by the bulk spin splitting of CrSb alone, but by a symmetry-selected interfacial mechanism in which Cr/Sb terminations and h-BN or graphene insertion layers determine spin-channel matching, while ferroelectric polarization reshapes the electrostatic barrier. Symmetric and asymmetric terminations reverse the correspondence between parallel/antiparallel Néel-vector configurations and high-/low-resistance states, showing that the actual alignment of interfacial Cr moments selects the dominant tunneling channels. Monolayer-In$_2$Se$_3$ junctions exhibit four nonvolatile resistance states, with tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) reaching 1626% and 2206%, respectively, and increasing to 9576% and 4144% upon Fermi-level shifting. Finite-bias calculations further reveal robust spin filtering and tunable spin-polarized currents. Extending the barrier to bilayer In$_2$Se$_3$ introduces interlayer polarization coupling, enabling eight resistance states with maximum TMR and TER values of $3.77\times10^{4}\%$ and $4.18\times10^{5}\%$, respectively. These results establish interface symmetry, spin-channel matching, and ferroelectric barrier reconstruction as design principles for stray-field-free multistate spintronic tunnel devices.
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All authors Zhi Yan, Yuwen Hua, Yueting Li, Xujin Zhang, Jianhua Xiao, Xiaohong Xu

Materials Science

General and scalable vapor etching and transformation platform for two-dimensional materials

Two-dimensional (2D) nanomaterials derived from non-van der Waals (non-vdW) solids offer exceptional physicochemical properties, yet their synthesis is impeded by intrinsic covalent/metallic bonding and high surface reactivity of the precursors. Here, we report a general vapor-phase etching and transformation platform for producing a library of 36 2D carbides, nitrides, and carbonitrides, exhibiting electrical conductivities spanning six orders of magnitude. Using reactive vapors like hydrogen chloride, we selectively remove A-layers from MAX phases to yield well-defined layers (MXenes), including previously inaccessible semiconducting Hf2CTx. By varying the reactive vapor environment, MXenes can be engineered at X-site and surface-termination site and even be transformed into non-vdW layers such as 2D MAX phases. This general and scalable vapor-phase platform reframes 2D material synthesis, opening new avenues for various applications.
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All authors Zhiguo Du, Jikai Zhang, Jonas Björk, Zongju Cheng, Ningjun Chen, Qi Zhao, Hao Chen, Yuxuan Ye, Guang Yang, Haiyang Wang, Bin Li, Johanna Rosen, Shubin Yang

Materials Science

Symmetry-Enforced Dirac Fermions and Structural Metastability in Pentagonal Monolayers of Transition-Metal Ditellurides

The recent synthesis of pentagonal PdTe$_2$ monolayer motivates broader research interests in transition-metal ditellurides whose electronic phases are governed by symmetry and structural reconstruction. The pentagonal phase of transition-metal ditellurides exhibits electronic properties that are dramatically different from those of its hexagonal counterpart due to its lower crystalline symmetry. Using first-principles calculations, we study monolayer $X$Te$_2$ ($X=\mathrm{Pd},\mathrm{Pt},\mathrm{Ni}$) in both hexagonal and pentagonal polymorphs. By constructing a continuous structural interpolation between the hexagonal and pentagonal phases, we show that the semimetal (hex)-to-semiconductor (penta) transition occurs only after an intermediate structural threshold rather than at the onset of symmetry reduction. The gap opening coincides with the formation of Te–Te dimers, which drive the bonding–antibonding splitting of the Te $p$ states and reorganize the band edges. In addition, the nonsymmorphic symmetry of the pentagonal phase enforces band degeneracies at the Brillouin-zone boundary, leading to symmetry-protected two-dimensional (2D) Dirac states. These results establish pentagonal $X$Te$_2$ monolayers as a new class of 2D semiconductors in which symmetry constraints and local bonding collectively shape the unconventional semiconducting electronic structure.
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All authors Manoj Gadtoula, Clayton Conner, Avinash Sah, Ronghao Luo, Guang Bian

Materials Science · Cross-listed from cond-mat.mes-hall

Hot-Carrier Distribution Spectroscopy by Transconductance in Two-Dimensional Field-Effect Transistors

The transconductance $g_m = dI_D/dV_G$ of a field-effect transistor (FET) is conventionally read as a proxy for carrier density. We show that it is instead a spectroscopic probe of the carrier distribution: because $g_m$ weights the spectral current $j(E)$ by the gate-voltage derivative $\partial f(E)/\partial V_G$ and integrates over energy, it is sensitive to the shape of $f(E)$, not merely its integrated weight $n$. We develop an energy-resolved transport framework for two-dimensional (2D) FETs and, within a gate-independent spectral-kernel approximation, derive the decomposition $g_m = g_m^{(n)} + g_m^{(\alpha)}$ into the conventional density-modulation term $g_m^{(n)}$ and a distribution-shape-driven term $g_m^{(\alpha)}$. The latter, obtained as the residual after subtracting the smooth density-modulation background from the measured $g_m$, exhibits a characteristic anomalous peak at a gate voltage $V_G^{\rm pk}$. This peak has no counterpart in equilibrium transport and cannot be explained by carrier density modulation alone. With the spectral kernel calibrated, the peak position and height – extracted from standard DC/lock-in $g_m$ sweeps – constrain the hot-carrier energy $E_0$, spectral width $\sigma$, and generation threshold $n_c$, realizing a steady-state, all-electrical spectroscopy of the carrier distribution. An optional time-resolved extension further recovers the carrier relaxation time $\tau$ from the transient response following a pump excitation, establishing the 2D FET as a distribution-function spectrometer that requires no optical readout.
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Materials Science

Terahertz Time-Domain Spectroscopy as a Universal Defect Fingerprinting Tool for Organic Halide Perovskite Solar Cells

Organic-inorganic hybrid perovskites (OHPs) deliver certified single-junction power conversion efficiencies (PCEs) exceeding 26% and perovskite-silicon tandem values surpassing 34%, yet a substantial gap with the Shockley-Queisser (S-Q) limit persists-primarily due to grain-boundary (GB) defects that drive non-radiative recombination, ion migration, and degradation. Rational passivation demands a non-contact tool capable of identifying and quantifying specific defect species in device-relevant thin films, a capability absent from conventional probes. This short review demonstrates that terahertz time-domain spectroscopy (THz-TDS, 0.3-3.0 THz) fulfills this role. Across four OHP compositions fabricated by sequential vacuum evaporation (SVE)-MAPbI3, MAPbBr3, FAPbI3, and CsPbI3-the THz spectral window captures both intrinsic phonon modes and GB-localized molecular defect vibrations, enabling species-specific, quantitative characterization at room temperature. Notably, the oscillator strength of the SVE-specific 1.58 THz absorption in MAPbI3 scales linearly with XPS-quantified CH3NH2 defect concentration, establishing THz-TDS as a direct, non-destructive defect meter. Building on these findings, we propose a three-pillar framework for THz-guided defect engineering: (I) quantitative defect measurement via oscillator-strength analysis, (II) material-specific fingerprint identification from a systematically constructed THz library, and (III) fingerprint-guided defect elimination with real-time feedback-together defining a closed-loop quality-control cycle that connects spectroscopic diagnosis to passivation strategy and, ultimately, to enhanced solar-cell efficiency.
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All authors Inhee Maeng, Young Mi Lee, Jinwoo Park, Seung Jae Oh, Min-Cherl Jung

Materials Science

Symbolic Predicate-Guided Language Agents for Inverse Design of Perovskite Oxides

Efficient discovery of high-performance materials has been pursued through a variety of data- and AI-driven strategies, among which inverse design, generating materials from desired target properties, has emerged as an important paradigm. Large language models (LLMs) offer a complementary route for inverse materials design because their reasoning and in-context learning capability can be used not only to propose candidates but also to demonstrate interpretable design principles. In this work, we introduce a domain specific language (DSL)-guided strategy to improve the reasoning and design capability of LLM agents by translating natural language design rules into symbolic predicates encoded in a predefined chemistry DSL. These predicates allow the LLM agent to obtain statistical evidence from the accumulated materials data, enabling the agent to evaluate and refine its own reasoning during the design loop. Based on this strategy, we developed a multi-agent materials design framework, called Operational Rule-grounded CHEmical Search Through Reasoning Agents (ORCHESTRA), and applied it to the inverse design of double perovskite oxides under multiple target-property objectives. The results show that symbolic predicates help the LLM identify unsupported rules, validate newly proposed rules and improve the rule store over iterative design cycles. Compared with a strategy relying only on natural language rules, the DSL-guided framework showed the potential to improve materials design performance, particularly for challenging target properties. These findings suggest that mathematical and statistical grounding can enhance the reasoning capability of LLM agents in materials science and that LLM-based inverse design can be performed effectively without large task-specific datasets or additional model training.
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All authors Dong Hyeon Mok, Seoin Back, Victor Fung, Guoxiang Hu

Thursday 16 July

Materials Science

Two-Dimensional Hexagonal BX3 (X = P, As) Monolayers as High-Capacity, Fast-Charging Anode Platforms for Lithium- and Sodium-Ion Batteries

The rapid advancement of alkali-metal ion batteries demands robust anode platforms combining high specific capacities with rapid charge-discharge kinetics. Using first-principles density functional theory (DFT), we systematically evaluate two-dimensional (2D) hexagonal BX3 (X = P, As) monolayers as high-performance dual-use anodes for lithium-ion (LIBs) and sodium-ion batteries (SIBs). Both metallic host architectures display strong thermodynamic affinities for Li+ and Na+ adsorption, favoring the hollow H3 site through synergistic ionic charge transfer and orbital hybridization. Climbing image nudged elastic band (CI-NEB) calculations reveal low direct H3 -> H3 diffusion barriers: 0.40 eV (BP3) and 0.26 eV (BAs3) for Li+, and 0.26 eV (BP3) and 0.19 eV (BAs3) for Na+, confirming exceptional high-rate kinetics. Thermodynamic convex hulls establish maximum stable lithiation at Li3BX3, yielding low average operating potentials of 0.39 V (BP3) and 0.35 V (BAs3) alongside theoretical specific capacities of 775 mAh/g and 341 mAh/g, respectively, with BP3 doubling commercial graphite (372 mAh/g). For SIBs, multi-layer sodiation expands storage up to Na15BP3 and Na12BAs3, delivering ultrahigh capacities of 3875 mAh/g (BP3) and 1365 mAh/g (BAs3) at low voltages of 0.18 V and 0.15 V. Crucially, projected density of states (PDOS) analyses confirm that both frameworks preserve intrinsic metallic conductivity throughout all charging stages. These combined properties establish 2D BX3 monolayers as outstanding, structurally resilient anode candidates for next-generation LIB and SIB energy storage technologies.
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Materials Science

exa-PD: A scalable high-performance workflow for multi-element phase diagram construction

Exa-PD is a highly parallelizable workflow designed for the construction of multi-element phase diagrams (PDs). It uses standard sampling techniques, molecular dynamics (MD) and Monte Carlo (MC) as implemented in the LAMMPS package, to simultaneously sample multiple phases over a fine temperature-composition mesh for free-energy calculations. Parsl serves as the global workflow engine, coordinating large ensembles of MD and MC tasks to achieve massive parallelization with strong scalability. The resulting free energies of liquid and solid phases are then fed to CALPHAD modeling via the PyCalphad package to construct multi-element PDs.
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All authors Zhuo Ye, Feng Zhang, Maxim Moraru, Weiyi Xia, Ying Wai Li, Yongxin Yao, Cai-Zhuang Wang

Materials Science

Ab initio time-dependent GW approach for nonequilibrium exciton-phonon coupled dynamics across momentum space

The dynamics of optical excitations in materials generally involves intertwined electron-hole (e-h) and electron-phonon (e-ph) interactions out of equilibrium. However, a full theoretical description of such nonequilibrium dynamics requires a systematic treatment of the coherent excitonic excitations and exciton-phonon interactions across the entire crystal momentum space in real time, which remains a major challenge and out of reach for first-principles approaches. Here, we present a new ab initio time-dependent adiabatic GW methodology that incorporates full finite-momentum e-h and e-ph couplings, enabling real-time simulations of the coherently coupled exciton-phonon dynamics. The excitonic excitations are naturally described by the equation of motion of the interacting single-particle density matrix, whereas their couplings to phonons are formulated within a linear-response framework, hence the simulations can be efficiently carried out within a primitive unit cell. We demonstrate the capabilities of this new approach by investigating the direct-to-indirect exciton transitions in monolayer WSe2 in a pump-probe setup of time-resolved and angle-resolved photoemission spectroscopy. Our results reveal that the phonon-mediated ultrafast intervalley dynamics of excitons of this system is within ~0.5 ps, manifested as in-gap photoemission intensity transfer from the K-valley to the Q-valley. This work establishes a comprehensive and practical nonequilibrium Green's function framework for accurately simulating nonequilibrium and coherent excitations involving coupled excitons and phonons from first principles.
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All authors Zhenfa Zheng, Benran Zhang, Jiawei Ruan, Chih-En Hsu, Zien Zhu, Supavit Pokawanvit, Felipe H. da Jornada, Hung-Chung Hsueh, Ting Cao, Mauro Del Ben, Yang-Hao Chan, Steven G. Louie, Zhenglu Li

Materials Science

Phase-Field Simulation of Dendrite Evolution in All-Solid-State Sodium Batteries during Cycling

Dendrite growth during cycling remains a critical challenge for all-solid-state batteries (SSBs), limiting the full realization of their inherent safety and high energy density. In particular, the mechanisms of continuous dendrite penetration during charge-discharge cycling remain poorly understood and are difficult to characterize experimentally. This study applies a phase-field model, informed by density functional theory calculations, to rationalize and visualize the dendrite penetration behaviors during cycling in sodium (Na) SSBs with pure Na or Na-Sb alloy anodes and polycrystalline Na$_3$SbS$_4$ electrolyte. We show that dendrite stripping is intrinsically asymmetric with respect to plating due to grain boundary geometry, leading to the formation of isolated Na metal that persists between cycles. This residual Na metal becomes kinetically stabilized at grain-boundary junctions and is readily reactivated during subsequent plating, thereby accelerating and amplifying dendrite penetration. We further investigate the effects of applied voltage, solid-electrolyte microstructure, and anode chemistry on this phenomenon. These findings establish isolated Na metal as a key contributor for continued dendrite propagation in Na SSBs and provide design principles for stabilizing anode/electrolyte interfaces in Na SSBs.
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All authors Chengyin Wu, Wolfgang Windl, Jung-Hyun Kim, Yanzhou Ji

Materials Science · Cross-listed from cond-mat.str-el

Field-induced first order transitions and phase coexistence in the Kitaev quantum spin liquid candidate BaCo2(AsO4)2

BaCo2(AsO4)2 (BCAO) is an insulating Kitaev quantum spin liquid candidate with a rich low-temperature phase diagram. Below 5 K, it exhibits double-zigzag magnetic order. Upon application of an in-plane magnetic field, the magnetic structure first transforms into an up-up-down (UUD) state near 0.12 T and then enters a fully spin-polarized ferromagnetic (FM) state near 0.5 T. In the narrow field regime close to the polarized phase, a finite residual thermal conductivity has been reported, suggesting a possible field-induced quantum spin liquid phase. Using neutron scattering, we show that the field-induced double-zigzag-to-UUD transition near 0.15 T is accompanied by the emergence of a cluster of localized UUD spin excitations that coexist with conventional spin waves. Upon further increasing field, BCAO undergoes a first-order UUD-to-FM transition with coexistence of UUD and FM phases, accompanied by a sharp response in the spin Seebeck coefficient. These results do not support a quantum spin liquid scenario near the UUD-to-FM critical field. Instead, modeling indicates that the broad excitations arise from bound spin-flip pairs, while a low-lying dispersive branch near the FM phase boundary carries the same sign of magnetization as the FM order. These excitations naturally account for the observed sign of the spin Seebeck response and are likely relevant to the thermal conductivity near the critical field.
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All authors Tanner J. Legvold, Bin Gao, Rong-Zhu Lin, Violet Williams, Tong Chen, Dehong Yu, Chien-Lung Huang, Gage Eichman, Renjie Lui, Benedetta Flebus, Pengcheng Dai, Douglas Natelson

Materials Science

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy

The wafer-scale monolithic integration of III-V materials on Si would lead to revolutionary optoelectronic hardware for data, computing and other applications. However, heteroepitaxy of III-Vs on Si requires overcoming the large lattice and thermal mismatches between the materials and reducing threading dislocations densities. In this work, we explore the oxidative solid phase epitaxy (SPE) of Ge+ implanted Si(111) to form ultra-thin strain-relieving SiGe metamorphic buffer layers for heteroepitaxy on Si. The SPE process is shown to result in a nanopatterning of the Ge concentration variation across the sample surface, visible by scanning and transmission electron microscopy (SEM and TEM). The concentration patterning is the result of a hexagonal network of Shockley partial dislocations at the SiGe/Si interface. Analyzing the pattern spacing observed by SEM is demonstrated as an easy, non-destructive method for obtaining the local strain state of SiGe layers. This work is important for engineering ultra-thin SiGe metamorphic buffer layers for III-V optoelectronics heteroepitaxy on the silicon platform.
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All authors Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi, Sunzhuoran Wang, Chengqian Liao, Vatsalkumar Patel, Andrew P. Knights, Ryan B. Lewis

Materials Science · Cross-listed from quant-ph

Coulomb blockade in microscopic material defects as a source of decoherence and noise in solid-state quantum circuits

A critical limitation of solid-state quantum devices arises from the materials from which they are fabricated: uncontrolled surfaces, interfaces, and structural imperfections introduce numerous sources of loss and decoherence. Despite extensive efforts, linking these decoherence mechanisms to their microscopic material origins – essential for developing effective mitigation strategies – remains an outstanding challenge that has slowed coherence improvements. Here, using scanning gate microscopy on live superconducting circuits we identify a previously unrecognised decoherence mechanism originating from Coulomb blockade and microwave-driven charge tunnelling in metallic grains. Such grains are ubiquitous in thin-film devices fabricated by standard lithography processes. By characterising multiple defects across different devices, we find such defects to be as common and as debilitating to device performance as two-level system (TLS) defects, while originating from a fundamentally different physical mechanism. Importantly, conventional characterisation techniques would misattribute this loss to other, microwave power-independent processes. Our observations thus reveal a widespread source of decoherence in superconducting circuits, challenging the prevailing paradigm that coherence lifetimes are primarily limited by TLS defects. Eliminating metallic grains during fabrication provides a clear and practical route to suppress this mechanism, offering a pathway towards improved coherence and reduced noise in microwave-based solid-state quantum devices.
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All authors R. Banerjee, L. P. Lindoy, M. Hegedus, A. Hutcheson, T. Hawkins, E. Daghigh-Ahmadi, S. Samaddar, T. Barker, J. P. Goff, A. Ya. Tzalenchuk, I. Rungger, S. E. de Graaf

Materials Science · Cross-listed from cond-mat.supr-con

High-Q superconducting microwave resonators using MBE titanium nitride

Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking curve width of 18 arcsec. Though the (111) oriented TiN exhibits an abrupt and crystalline interface with sapphire, for the first time we observe sub-surface defects in the sapphire substrate, which nucleate structural defects in the epitaxial TiN layer. Using quarter-wavelength coplanar waveguide (CPW) resonators in a 3 \textmu m/6 \textmu m/3 \textmu m gap/strip/gap lines in a hanger geometry, we find the internal quality factor of the TiN resonators to be $>10^{6}$ in the single-photon $\langle n \rangle \sim 1$ limit at 5.8 GHz and 10 mK, rising to $>20 \times 10^{6}$ at $\langle n \rangle \sim 10^{6}$. The results are of high interest for applications of superconducting TiN in several areas, and provide a path towards epitaxial Josephson junctions with crystalline barriers in the future for high coherence qubits.
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All authors Anand Ithepalli, Haoran Lu, Eegene Clara Chung, Xiangqin Wang, Amit Rohan Rajapurohita, Keun-Yeol Park, Celesta S. Chang, Peter McMahon, Huili Grace Xing, David Muller, Valla Fatemi, Debdeep Jena

Materials Science · Cross-listed from cond-mat.supr-con

Magnetic Order in bilayer Ruddlesden-Popper Nickelates

The recent discovery of high-temperature superconductivity in the bilayer nickelate La$_3$Ni$_2$O$_7$ has led to extensive interest in the correlation physics of its normal state. Given that the superconducitivity develops near a density wave order in the phase diagram, it is important to elucidate the nature of this order. Based on the accumulated experimental evidence for a bad metal state in proximity to an orbital-selective Mott phase, here we describe magnetic correlations of the system in a conceptually new way – in terms of effective local moments experiencing a combination of RKKY and superexchange interactions. This gives rise to a magnetic order with a wavevector that is close to $\mathbf{Q}=(\pi/2,\pi/2)$ and, at the same time, yields a clear understanding of the associated spin dynamics. Our results are consistent with the rapidly emerging experiments about the magnetic correlations in the density wave order of the bilayer nickelate. Implications for unconventional superconductivity in this and related multiorbital systems are discussed.
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All authors Yiming Wang, Guijing Duan, Zhiguang Liao, Kuan-Sen Lin, Rong Yu, Qimiao Si

Materials Science

Hyperfine driven spin relaxation of charge carriers in metal-halide perovskites

Spin relaxation of localized charge carriers in semiconductors is primarily governed by hyperfine interaction with the surrounding nuclear spin bath. While this mechanism is well-established in III-V bulk materials and quantum dots, its critical role in metal halide perovskites (MHPs) has only recently emerged. Their inverted band structure induces an unusual hierarchy of hyperfine couplings, with hole interactions dominating electron interactions, particurlaly in Pb-based perovskites. Here, we adapt a spin relaxation model - originally developed for muon spin spectroscopy - to provide an exact description of longitudinal spin relaxation for localized carriers across arbitrary hyperfine correlation times. This approach is motivated by recent experimental evidence in MAPbI3, which places carrier spins in an intermediate correlation regime, where conventional mono-exponential approximations fail. Our analysis reveals distinct hyperfine relaxation channels: electrons couple primarily to halogen nuclei, whereas holes are governed by metal nuclei. This leads to a key prediction - perovskites with lighter halogens and metal cations exhibit significantly extended spin lifetimes. Applied to time-resolved Faraday rotation data obtained from two perovskite samples, our model extracts key microscopic parameters - including the carrier localization volume and hyperfine correlation time - demonstrating the necessity of the exact dynamical solution over a single-exponential approximation. These findings provide microscopic insight into hyperfine-driven spin relaxation in MHPs and establish a robust framework for characterizing carrier localization and spin dynamics.
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All authors Guillaume Lague, Frédérick Bernardot, Mauricio Calvo, Olfa Selmi, Sofia Masi, Christophe Testelin, Hernan Miguez, Ivan Mora-Sero, Maria Chamarro

Materials Science

Emergent d-wave altermagnetism in chlorine-adsorbed FeSe monolayer

The recent emergence of altermagnetism has opened new frontiers in condensed matter physics, yet material platforms capable of hosting both intrinsic altermagnetic order and superconductivity remain exceedingly rare. Here, based on symmetry analysis and first-principles calculations, we propose a realistic route to engineer robust altermagnetism in monolayer FeSe, a prototypical iron-based superconductor. By designing a stoichiometric Fe2Se2Cl structure through single-side Cl adsorption and introducing gate-tunable hole doping, we achieve a highly stable altermagnetic ground state. Our calculations reveal a synergistic mechanism: hole doping firmly stabilizes the checkerboard magnetic order, while the asymmetric ligand environment intrinsically breaks the outof-plane spatial inversion symmetry. Consequently, this interplay induces a giant altermagnetic spin splitting of up to 620 meV. Crucially, we demonstrate that this altermagnetic state and its giant spin splitting are highly resilient, persisting even in a 10-layer slab model that accurately simulates the bulk limit. By introducing altermagnetism into the well-established FeSe-based superconducting family, our findings identify Fe2Se2Cl as a promising platform for spintronic applications and motivate future studies of the possible interplay between altermagnetism and superconductivity.
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All authors Zi-Hao Ding, Ze-Feng Gao, Kai Liu, Peng-Jie Guo, Zhong-Yi Lu

Materials Science · Cross-listed from cond-mat.str-el

Driven-dissipative superconductivity in moiré heterostructure without attraction

Dissipative preparation of quantum order offers a route to superconductivity that does not rely on enhancing attractive interactions. Here we propose a driven-dissipative protocol to prepare superconductivity as a stationary state of a two-dimensional moiré heterostructure. The key ingredient is a bilayer moiré platform in which the layer degree of freedom acts as a pseudospin, allowing the pseudospin structure required for pairing to be implemented through optically induced spatial operations. This preparation scheme requires local dissipation, which we show to arises naturally from weakly dispersive bosonic modes in the heterostructure. In contrast, in the opposite regime of collective dissipation, the same platform exhibits an early-time superradiant burst. Our results establish driven-dissipative moiré heterostructures as a promising platform for preparing superconductivity, while also revealing a connection between steady-state pairing and transient superradiance.
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All authors Tsung-Sheng Huang, Atac Imamoglu, Mohammad Hafezi, Sebastian Diehl

Materials Science

Growth-controlled suppression of electrically active defects in CrSBr

In CrSBr, as in many crystalline materials, the type and density of defects are expected to strongly influence material behavior. Identifying the underlying atomic defect configurations and controlling their populations during growth are therefore important steps toward understanding and ultimately tailoring its rich magneto-electrical properties. However, systematic control of defects in CrSBr during chemical vapor transport (CVT) growth has not yet been established. Here, we correlate CVT growth conditions with defect concentrations measured using conductive atomic force microscopy (CAFM). We focus on a characteristic defect with a strong electronic fingerprint, labeled D*, and decrease its concentration by up to an order of magnitude through optimized growth conditions. We show that defect densities can be tuned by adjusting precursor stoichiometry, where sulfur- and bromine-rich conditions suppress defect formation, and by lowering the absolute growth temperatures while maintaining the same temperature gradient. Thermodynamic modeling and density functional theory calculations suggest that D* is most consistent with a sulfur-related vacancy complex rather than an isolated point defect. These results provide practical strategies for growing high-quality CrSBr with controlled defect densities.
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All authors Sara R. Tulchinsky, Sergii Grytsiuk, Shen van Hassel, Iva Plutnarová, Rami Dana, David Sedmidubský, Zdenek Sofer, Malte Rösner, Frances M. Ross, Julian Klein

Materials Science

Local magnetic correlations and light-sensitive centers in the Cr2AlC MAX phase

Cr2AlC MAX phase is synthesized by high-pressure solid-state annealing and investigated as a candidate platform for optically responsive magnetism. Structural characterization confirms the formation of the Cr2AlC phase, while magnetic and optical-magnetic properties are examined by superconducting quantum interference device (SQUID) magnetometry, electron spin resonance (ESR), and first principles calculations. SQUID magnetometry identifies Cr 2AlC as a weak, field-linear metallic paramagnet dominated by Pauli-like susceptibility of itinerant Cr-derived states. Its non-monotonic temperature dependence is described by an additional contribution from antiferromagnetically coupled Cr-Cr dimers, whereas the low-temperature Curie-like upturn originates from only a trace population of localized Cr centers. Under red-light illumination, SQUID magnetometry does not reveal an intrinsic macroscopic optomagnetic response. In contrast, ESR at 4 K shows a reversible light-induced reduction of a local magnetic signal, but the optically modified spin population corresponds only to several tens of ppm of the Cr sublattice. Ab initio Bethe-Salpeter equation (ai-BSE) calculations combined with the maximally localized Wannier function analysis suggest that optical excitation can redistribute spin polarization between neighboring Cr sites with the opposite local moments. The combined experiment-theory approach therefore establishes the hierarchy of magnetic contributions in Cr 2AlC and identifies the microscopic origin of its local optical sensitivity. This provides a reference for designing MAX phases and related MXenes in which defects, surface terminations or reduced dimensionality may enhance optically active magnetic states.
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All authors Malgorzata Wierzbowska, Anna Basa, Kazuhiro Marumoto, Jiaxi Wang, Katarzyna Gas, Maciej Sawicki, Kacper Sierakowski, Karel Carva, Michal Bockowski

Materials Science · Cross-listed from physics.chem-ph

Interaction energies of H$_2$ and CO on transition-metal surfaces computed by a range-separated hybrid van der Waals density functional

Dissociative chemisorption (DC) of H$_2$ on the Cu(111) surface is a prototypical problem for understanding elements of heterogeneous catalysis [Science 326, 832 (2009)]. The challenge lies in modeling the reaction dynamics that in turn reflects a classical potential for atomic deformations, friction, and inelastic scattering. Here, I test the use of a set of range-separated hybrid (RSH) van der Waals density functionals (vdW-DFs) [JPCM 37, 211501 (2025)] on their ability to describe the classical barrier for dynamics in this H$_2$+Cu(111) DC problem. I furthermore document use of a variant for fast accurate predictions of the molecular quasi-particles (QPs), finding excellent performance across a set of small molecules that are often studied in catalysis. Finally, I suggest and implement a way to use that QP focus to identify what I consider a best-possible non-empirical (yet adsorbate specific) RSH vdW-DF version, denoted AHBR($\gamma^*$) for H$_2$ DC modeling, navigating what are partly conflicting requirements on the molecule and metal sides. I find that the AHBR($\gamma^*$) can determine the classical H$_2$+Cu(111) DC barrier height close to chemical accuracy. I suggest that DC modeling can test broader relevance of the physics underpinning these RSH vdW-DFs.
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Materials Science · Cross-listed from cs.CE

Neural operators solve inverse problems for constitutive model discovery

Characterizing the mechanical response of materials traditionally requires solving optimization problems in which model parameters are calibrated or trained to minimize the discrepancy between model predictions and experimental data. This process can be computationally expensive and time-consuming. To overcome this limitation, we propose two neural operator architectures that directly map experimentally measured data to the constitutive functions governing the mechanical response of the material: Physics-Augmented Neural Operators (PANO) and Constitutive Artificial Neural Operators (CANO). The proposed neural operators approximate the mapping between the infinite-dimensional input space of full-field displacement measurements and net reaction forces, and the infinite-dimensional output space of hyperelastic strain-energy density functions. The displacement fields are encoded through Laplacian eigenfunctions to obtain discretization-independent and noise-robust predictions. Our framework constrains the output space to physically admissible material models that satisfy fundamental physical requirements by design. The neural operators are trained on simulated data tuples of displacement fields and reaction forces for a range of material models. Once trained, the neural operators enable near-instantaneous material characterization and require only a single forward pass to infer the strain-energy density function from a given experimental dataset. We test the predictive power of the neural operators for unseen data, noisy data, data with missing information, data from different spatial discretizations, and data from geometries of different sizes.
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Materials Science

Recent progress on liquid transport growth of quantum materials

Liquid transport growth (LTG) is a horizontal flux growth technique that is closely analogous to chemical vapor transport, with the key distinction that a molten flux rather than a vapor serves as the transport agent. Unlike conventional flux growth, LTG spatially separates charge dissolution and crystal precipitation and couples them through continuous solute transport under a deliberately imposed temperature gradient. This enables crystal growth to begin before the charge is completely dissolved, removes the equilibrium solubility constraint on the starting charge/flux ratio, and allows large yields of single crystals to be obtained from a single growth. Recent studies have further shown that by spatially separating dissolution and crystallization and maintaining crystallization at a nearly constant temperature, LTG is particularly effective for two classes of materials: compounds that crystallize only within a narrow temperature and/or composition window, and compounds whose stoichiometry, defect concentration, and thus physical properties are sensitive to the crystallization temperature. In this review, we discuss representative examples including Fe$_3$Sn$_2$, CrTe$_3$, YFe$_2$Ge$_2$, UTe$_2$, CeRh$_2$As$_2$, MoTe$_2$, WTe$_2$, and LuNb$_6$Sn$_6$ to illustrate the unique capabilities of LTG for producing high quality single crystals of diverse quantum materials. We also summarize practical considerations for LTG experimental design, including furnace selection, growth time, melt stability, and ampoule geometry, and discuss future opportunities for transforming LTG from an empirical growth method into a more predictive crystal growth technique.
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Materials Science

Ridge-Spin-Layer Coupling and Emergent Ridgetronics in 2D Altermagnets

Extending valleytronics from discrete points to continuous lines in momentum space transforms dispersionless bands into a controllable degree of freedom. Here we introduce ridge–spin–layer coupling (RSLC) in two-dimensional (2D) altermagnets, where a one-dimensional continuous line of dispersionless electronic states (a ridge) in momentum space locks to both spin polarization and atomic sublayer. This ridge-induced quenching of kinetic energy mimics flat-band physics, yet crucially, RSLC grants external control, allowing for layer-selective switching of ridge orientation in reciprocal space, spin-filtered transport in real space, and a distinct electric Hall response. Guided by collinear spin layer group symmetry, we identify three 2D candidate materials, namely Mg$_2$Mo$_2$(PO$_5$)$_2$, Ca(FeP)$_2$, and Mg$_2$V$_2$(SO$_5$)$_2$, each featuring a crossed-ridge structure with two ridges, one per spin channel and sublayer. Our work establishes ridgetronics as a controllable platform for direction-discriminating currents, bridging dispersionless bands with multifunctional device operation.
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All authors Mu Tian, Run-Wu Zhang, Chaoxi Cui, Zhi-Ming Yu, Yugui Yao

Materials Science · Cross-listed from cond-mat.soft

Plug Flow and Cavitation in Rough Lubricated Contacts: Molecular Dynamics of Single- vs. Two-Component Fluids

We present non-equilibrium molecular dynamics simulations of lubricated sliding between rough, deformable surfaces under conditions representative of mixed lubrication. One aim is to reduce the gap between highly idealized simulations of smooth interfaces and real, rough, load-bearing contacts. Another aim is to determine whether favorable tribological properties of two-fluid lubrication reported for solvated hydrophilic-hydrophobic polymer-brush interfaces can also be realized in rough contacts without brushes. To this end, we compare aqueous (water), hydrocarbon (n-dodecane), and immiscible two-fluid lubrication under identical geometric conditions representing randomly rough surfaces. For the single-component lubricants, the simulations reproduce established trends: water shows stronger speed dependence but reduced load-bearing capacity than n-dodecane, despite their similar ambient viscosities. Beyond this expected behavior, the simulations reveal that the combination of strong confinement and large height gradients can cause plug flow and thereby cavitation after asperity collisions. For a high-surface-tension liquid like water, cavitation leads to an abrupt shear-stress release on scales much exceeding the size of the cavity. Since plug motion only weakens with single-component lubricants at low speeds, the two-fluid lubricant can only leverage its potential advantages at low sliding velocities. It is also the only system in which folding lips form, occasionally developing into transient, detached clusters at high speeds.
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Materials Science

Modeling the Fatigue Behavior of Amorphous Polymers

Prediction of material durability is both very important and very difficult. In many cases, material durability is measured by subjecting a sample to repeating oscillatory cycles (in shear or tension-compression) until it fails in either ductile or brittle fashion. Typically, the stress amplitude is denoted S, and the number of cycles N, so the resulting dependence is known as the SN-curve. For many materials, SN curve has been shown to obey the empirical Basquin's law, N = AS^(-m), where the prefactor A was a function of the temperature, load frequency, and sample history, and the power law m was a real number, usually between 3 and 12. Here, we derive the Basquin's law using a linearized version of the Long's plasticity model and demonstrate that within this framework, m = 3. We also derive the expression for the prefactor A. Finally, we show that our theory successfully describes experimental data for three amorphous polymers, PS, PMMA, and PVC.
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Materials Science

Scalable Fabrication of Diamond-on-Silica Heterostructures via High-Selectivity Deep ICP-RIE and Room-Temperature Bonding

Single-crystal diamond is a leading material platform for high-power electronics and solid-state quantum technologies, yet many device architectures require micrometer-scale membranes with deeply etched features, patterned from commercially available substrates. In this work, we demonstrate a complete through-etch of a 16 {\mu}m -thick NV-doped single-crystal diamond membrane using a single-layer SiO2 hard mask combined with a multi-step oxygen-based ICPRIE process. With a diamond-to-SiO2 selectivity of 15:1, this non-metallic mask strategy can achieve etch depths of few tens of {\mu}m with well-defined sidewalls, conserved surface roughness and negligible micromasking. Furthermore, we use the oxide layer that remains after etching to serve as the bonding surface in a subsequent integration step. The etched microstructures are transferred onto SiO2 substrates and bonded at room temperature using O2 plasma surface activation and a sodium silicate interlayer. The resulting siloxane film is optically transparent across the visible spectrum and introduces no detectable parasitic photoluminescence, preserving the optical readout of the embedded NV centers. Together, this deep-etch and room-temperature bonding process provides a scalable and contaminationfree route from bulk diamond membranes to diamond-on-silica heterostructures for integrated quantum photonics and sensing applications.
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All authors R. Chembra Vasudevan, A. Hammouti, J. Le Pouliquen, T. Batte, P. Pirasteh, Y. Dumeige, P. Huillery

Materials Science

Synergistic Effects of Phosphorus Doping and Oxygen Vacancies on Formaldehyde Oxidation over CeO$_2$(111): A First Principles Investigation

Using a combination of static and dynamic density functional theory simulations, we systematically investigated how phosphorus doping and oxygen vacancies on the CeO$_2$(111) surface influence the oxidation mechanisms of formaldehyde (HCHO). Our results reveal that P cations (P$^{5+}$) substitutionally replace Ce$^{4+}$ in the lattice, forming Ce$-$O$-$P bonds that reduce the band gap (from 2.26 eV to 2.09 eV) and generate localized Ce$^{3+}$ states through charge redistribution. This synergistic effect of P doping combined with oxygen vacancy strengthens HCHO adsorption by decreasing the adsorption energy from -0.62 eV on pristine CeO$_2$(111) to -2.65 eV on the defective P-doped surface. Importantly, P doping lowers the C$-$H bond cleavage barrier by 0.84 eV relative to pristine CeO$_2$(111), accelerating formaldehyde oxidation on the defective surface. In addition, the rapid desorption of CO$_2$ and H$_2$O ($\tau \sim 0.59 s$ at 300 K) indicates weak product-surface interactions, which favor efficient catalyst regeneration during continuous operation. These findings highlight P-doped CeO$_2$(111) as a promising system for low-temperature HCHO oxidation and provide insights into the design of ceria-based catalytic materials.
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All authors Tarek Ayadi, Mourad Debbichi, Michael Badawi, Fabien Pascale, Adel Mesbah, Sébastien Lebègue