Mesoscale and Nanoscale Physics
Depth Control of Room-Temperature Quantum Emitters in Gallium Nitride
Alexandros Bampis, Johann Stachurski, Anna Schwab et al. (+3 more)
Bright
quantum emitters are key components for
quantum communication systems. Radiative point defects in gallium nitride (GaN) are promising candidates for room-temperature single-
photon emission, operating from the visible to the telecom O-band. Despite their potential, their integration into photonic structures has remained limited in the literature, with experimental
photon extraction efficiencies far below simulated predictions. To identify the origin of this limitation, we investigate visible and near-infrared
quantum emitters in GaN epilayers grown on $c$-plane sapphire substrates exhibiting narrow linewidths ($\sim$4 nm), high
photon count rates ($ > $2 MHz), and strong antibunching, reaching $g^{(2)}(0)$ values as low as 0.06 at room temperature. We find that these emitters are located near the GaN/substrate interface, explaining their limited coupling to optical modes. Building on this observation, we show that the insertion of a thin low-temperature GaN interlayer enables the formation of
quantum emitters at arbitrary depths with sub-60 nm accuracy, independent of the substrate. The intentionally introduced emitters retain optical properties comparable to naturally occurring ones, including narrow linewidths ($\sim$6 nm), saturation count rates exceeding 1.5 MHz, high Debye-Waller factors (0.69-0.98), and strong antibunching. The resulting epilayer fully coalesces within less than 250 nm ensuring compatibility with GaN-based cavity fabrication and enabling emitter placement within intrinsic regions of p-i-n diode architectures. These results mark a decisive step toward efficient emitter-cavity coupling, enabling the realization of cavity-enhanced
quantum emission in GaN.
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All authors Alexandros Bampis, Johann Stachurski, Anna Schwab, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean
Mesoscale and Nanoscale Physics · Cross-listed from cond-mat.stat-mech
Topology of Fluctuation Bands in Chiral Active Crystals
Raphaël Maire
While band
topology is usually associated with the deterministic dynamics of a system, we show that it can instead reside in its fluctuations. Using a reciprocal
lattice driven by nonequilibrium chiral active noise, we find that the displacement spectrum—which quantifies displacement fluctuations—admits bands with nonzero Chern numbers despite a Chern-trivial deterministic mechanics. A two-band valley theory captures the emergence of this
topology through a Dirac mass inversion, a Haldane-type mechanism, or a quadratic band touching, depending on the relevant transition. Through the bulk–boundary correspondence, we find boundary-localized fluctuation modes that are distinct from the usual propagating mechanical edge states.
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Mesoscale and Nanoscale Physics · Cross-listed from cond-mat.supr-con
Electrical manipulation of oxygen stoichiometry in multiterminal YBa$_2$Cu$_3$O$_{7-\delta}$ junctions
Daniel Stoffels, Caio C. Quaglio-Gomes, Nicolas Lejeune et al. (+7 more)
Local manipulation of oxygen stoichiometry offers a route to control the electronic properties of complex oxides, yet the selective modification of individual current-carrying branches through oxygen redistribution remains unexplored in multiterminal high-temperature superconducting junctions. In a YBa$_2$Cu$_3$O$_{7-\delta}$ Y-shaped three-terminal device, we demonstrate the possibility to electrically control oxygen vacancy migration on a hand-picked terminal while largely preserving the other two. Oxygen-depleted propagating fronts are directly visualized by the resulting change in optical reflectivity and they are linked to the
evolution of the electrical response. The process is highly directional and determined by the polarity of the applied current, allowing for the creation of either a converging or a diverging propagating front from the central node of the Y-shaped device. The associated changes in resistance exhibit relaxation on a timescale of minutes, driven by the vacancy concentration gradient. Effects of oxygen migration are also mapped by Kelvin Probe Force Microscopy and Scanning
Laser Microscopy, which probe work-function changes and spatially resolved variations in the superconducting transition, respectively. Notably, the Tc contrast revealed by the latter provides a quantitative handle on the underlying oxygen content, enabling direct visualization of oxygen redistribution. Finite-element modeling and nanoprobe X-ray diffraction qualitatively reproduce the observed vacancy redistribution. These results establish a post-fabrication route to locally tune properties of superconducting multiterminal devices such as nanocryotrons, yTron, and tunable weak links.
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All authors Daniel Stoffels, Caio C. Quaglio-Gomes, Nicolas Lejeune, Emile Fourneau, Pedro Schio, Huidong Li, Lourdes Fabrega, Anna Palau, Maycon Motta, Alejandro V. Silhanek
Mesoscale and Nanoscale Physics · Cross-listed from quant-ph
Immittance formulas for exact blackbox quantization and divergence-free effective models in circuit QED
Philippe Gigon, Peter Rabl and Adrian Parra-Rodriguez
Building on the first-order
circuit quantization method [arXiv:2304.12252, arXiv:2401.09120], we provide simple formulas to construct exact
Hamiltonians for Josephson-junction-based superconducting qudits capacitively, inductively, or galvanically coupled to passive linear environments. These environments may be multiport, multimode, discrete or continuous, reciprocal or nonreciprocal, and are characterized directly by their impedance or admittance
matrices. In the weak-coupling regime, we further derive divergence-free dispersive
Hamiltonians for mode-resolved environments and transition-resolved weak-coupling master equations for dissipative continua. Mode structure, frequency renormalizations, environment-mediated interactions, decay rates, and directional cross couplings then follow from the same causal immittance response, while spurious Lamb-shift divergences arising from uncontrolled approximations in previous treatments are made explicit and avoided. We apply the theory to a set of illustrative
circuits comprising a discrete resonator filter, finite-band metamaterial environments, nonreciprocal waveguide-QED systems, and superconducting giant atoms, for which analytical response
matrices can be obtained, although the method is particularly well suited to numerical responses from electromagnetic solvers or experimental characterization. We thereby extend the black-box quantization framework to multiport, dissipative, and nonreciprocal settings, establishing a simple and scalable route toward optimized and automated electromagnetic design of large-scale superconducting
quantum hardware.
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Mesoscale and Nanoscale Physics · Cross-listed from quant-ph
The Gain-Engineered Transmon
Ian Yang, Francesco Adinolfi, Alessandro Bruno et al. (+3 more)
The interaction between a
qubit and its environment can be engineered such that one error channel dominates over all others, resulting in noise bias. This property enables error correction codes to focus on the dominant error type, thereby significantly reducing the number of physical systems required for fault-tolerant
quantum computation. However, engineering noise bias typically introduces complexity at the physical system level, which decreases its usefulness by limiting scalability. Here, we introduce and experimentally realize a noise-biased
qubit in a standard transmon-readout resonator
circuit, one of the most common superconducting architectures, by only adding a single microwave tone. We encode the
qubit in the transmon $|\mathrm{g}\rangle$- and $|\mathrm{f}\rangle$-states, and engineer a frequency-selective gain channel that counteracts single-
photon loss errors between the computational states. We demonstrate an order-of-magnitude enhancement in relaxation time compared to the $|\mathrm{g}\rangle-|\mathrm{e}\rangle$ encoding, conceding only a factor-of-two decrease in the echo-coherence time. Furthermore, we show that this
qubit is compatible with fast, high-fidelity operations. Our results open a path towards using this system as a simple building-block for hardware-efficient
quantum error detection and correction schemes.
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All authors Ian Yang, Francesco Adinolfi, Alessandro Bruno, Venus Hasanuzzaman Kamrul, Daniel Z. Haxell, Alexander Grimm
Mesoscale and Nanoscale Physics
Size and Impurity Effects on Scattering of Valley Hall Modes in Gate-Defined Bilayer Graphene Superlattices
Marcus N. Kanestrøm, Antonio L. R. Manesco and D. O. Oriekhov
In the present paper we perform a tight-binding simulation of gate-defined islands in Bernal bilayer
graphene (BLG). The inversion of the gap sign on the boundaries of the islands creates topologically-protected valley Hall modes. We focus on the specific questions of whether the valley Hall modes around such islands could serve as a host for
quantum walks or simulate weakly coupled systems, and how their tunneling is affected by in-gap impurities. In addition, we discuss the effect of misalignment of top and bottom gate patterns on the tunneling properties between islands. Our main results show that resonant tunneling via an impurity enhances overlap between superlattice islands, while misalignment does not break topological protection over a wide parameter regime. In addition, we study the two-island geometry and show that it is possible to leverage suppressed scattering to place islands more densely on a single sample.
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Mesoscale and Nanoscale Physics
Switchable heavy-hole/light-hole spin qubit
Zoltán György, Dmitry Miserev, Jelena Klinovaja et al. (+1 more)
Compressively strained Ge
quantum wells in planar SiGe/Ge
heterostructures are the state-of-the-art platform for hole
spin qubits. While they exhibit robust coherence times, they possess weak intrinsic
spin-orbit interaction (SOI) due to the heavy-hole (HH) character of the wavefunction. Recently, light-hole (LH)
qubits were proposed in GeSn/Ge
heterostructures, offering strong, intrinsic, linear-in-momentum SOI. In this work, we propose a switchable HH-LH
spin qubit in a bilayer Ge
heterostructure with SiGeSn barriers, combining the advantages of HH and LH devices. The character of the
qubit can be changed by shuttling from an LH well to an HH well, which also enables fast, hopping-based single-
qubit rotations. Additionally, we observe an HH-LH resonance introduced by the in-plane confinement, resulting in $g$-factor peaks and first-order charge noise sweet spots. Our calculations reveal a sweet spot with Rabi frequencies on the order of 100 MHz, comparable to the LH regime, but with a more than tenfold increase in coherence time, on the order of 100 $\mu$s.
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All authors Zoltán György, Dmitry Miserev, Jelena Klinovaja, Daniel Loss
Mesoscale and Nanoscale Physics · Cross-listed from physics.optics
Room-temperature graphene sub-terahertz detector integrated on a silicon dielectric waveguide
A. Titchenko, K. Shein, M. Titova et al. (+6 more)
Terahertz (THz) photonics offers a promising platform for next-generation 6G wireless communications, on-chip spectrometers, and non-invasive biomedical sensors. In the near- and mid-infrared, monolithically integrated photodetectors are a cornerstone of photonic integrated
circuits (PICs). In the THz range, however, such integration on low-loss dielectric waveguides remains an open challenge: to date, room-temperature on-waveguide detection has been realized only through hybrid flip-chip assembly of discrete elements, which leads to poor mode coupling, larger footprint, and reduced mechanical stability. Here we address this gap by demonstrating a room-temperature
graphene sub-THz detector monolithically integrated on a high-resistivity silicon dielectric waveguide for D-band (110-170 GHz) operation. We couple an hBN-encapsulated
graphene channel to the guided mode using a tapered slot-line
antenna patterned directly onto the silicon surface. The detector achieves a voltage responsivity of 11.5 V/W and a 3 dB bandwidth of 1.94 GHz, with the latter currently limited by parasitic inductance of the readout interconnects rather than by the intrinsic
graphene response. This platform provides a practical pathway to fully integrated room-temperature THz photonic
circuits, where electrostatic gating and impedance matching can improve both responsivity and bandwidth by roughly an order of magnitude.
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All authors A. Titchenko, K. Shein, M. Titova, M. Kashchenko, O. Popova, R. Izmaylov, E.I. Titova, I. Gayduchenko, G. Goltsman
Mesoscale and Nanoscale Physics
Topological phases of a generalised tripartite Haldane model
Ahmed Al-kharusi, Alessandro Principi and Niels R. Walet
We present a generalised tripartite Haldane model with a complex nearest neighbour hopping parameter. The total
magnetic flux through the primitive unit
cell, which consists of three hexagonal unit
cells is zero, and thus the model has the structure of a loop-current model. We calculate topological phase diagrams of the Chern numbers as a function of the phases of the nearest and next-nearest neighbour hopping parameters for a fixed ratio of the magnitude of the hopping parameters. We show that, unlike the Haldane model, the topological phase diagram of this model is very complex, but some aspects can still be dealt with analytically. Furthermore, the Chern numbers of the topological phases are as large as $7$ in absolute value. The analysis is supported by explicit expressions for energy bands crossing at high
symmetry points in the Brillouin zone, which show as linear phase boundaries in the phase diagram. We show that such lines explain many features in the topological phase diagrams. Finally, we analyse a few representative examples of the nature of level crossings away from high
symmetry and their
evolution with model parameters.
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Mesoscale and Nanoscale Physics
Light-Hole Spin Qubits in Strained SiGe Lattice-Matched to Ge
Edmondo Valvo, Davide Costa, Patrick Del Vecchio et al. (+3 more)
Strained germanium ($\varepsilon$-Ge)
quantum wells on metamorphic SiGe buffers have enabled advanced hole-based
spin qubit devices. Alternatively, unstrained Ge with
lattice-matched strained silicon-germanium ($\varepsilon$-SiGe) barriers eliminates the need for metamorphic buffers altogether. The ground state character of both these platforms is predominantly heavy-hole (HH) with a largely anisotropic
spin response. We propose and study an alternative
heterostructure,
lattice-matched to Ge, in which both the SiGe
quantum well and barriers are tensile strained, with their composition contrast providing the band offset for confinement and the tensile strain stabilizing a light-hole (LH) ground state. We show large
spin-orbit coupling (SOC), both linear and cubic, along with a significantly more isotropic
spin response compared to strained HH
qubits. We also study the decoherence properties of the proposed device, showing an appreciable gain in the quality factor compared to their HH counterparts. Finally, we propose a bilayer
heterostructure that allows for electrical switching between HH and LH ground state character.
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All authors Edmondo Valvo, Davide Costa, Patrick Del Vecchio, Stefano Bosco, Giordano Scappucci, Maximilian Rimbach-Russ
Mesoscale and Nanoscale Physics · Cross-listed from cond-mat.str-el
Fate of the non-Abelian Moore-Read manifold under the non-Hermitian skin effect
Jiaxuan Guo, Simin Nie, Xiting Zhang et al. (+1 more)
We study a non-Abelian Moore-Read fractional Chern
insulator under a translation-preserving, nonreciprocal deformation that generates the non-Hermitian skin effect under open boundaries. The model combines the imaginary-gauge Hatano-Nelson deformation with a kagome-
lattice three-body interaction designed to stabilize Moore-Read order at $\nu=1/2$. Our primary diagnostic is the biorthogonal $(2,4)$-admissible particle-
entanglement counting of the sixfold Moore-Read
manifold, the standard Moore-Read fingerprint. Across three sizes ($N=16,20,24$), the counting locks to the clean references 1308, 3965, and 9282 over finite nonreciprocity windows through $\gamma\le0.55$, $0.65$, and $0.74$, respectively, with positive reference-rank
entanglement gaps. Within every reported window the count is unchanged by the spectral readings tested; at $N=16$ it is also unchanged across three reduced density operators, with all 15 combinations returning 1308. The sixfold pattern for even $N_f$ and the adiabatically tracked Ising-odd doublet remain separated over the tested range $\gamma\le0.6$. Beyond a geometry-dependent threshold the instantaneous-lowest-six reference-rank gap drops sharply and its counting destabilizes. At $N=24$ a sector-0 branch pair becomes complex conjugate over a narrow interval inside the delocking bracket; both continuations through the interval are delocked at the tested PES points $\gamma=0.76$, $0.77$, and $0.80$. A same-
lattice Abelian $\nu=1/3$ Laughlin realization retains its counting to $\gamma=1.0$, so its counting is the more robust. On the
torus the eigenstates remain extended; under open boundaries the right and left states skin-localize at opposite edges while the biorthogonal particle-
entanglement spectrum is invariant under the imaginary-gauge similarity, so the
torus and the open cylinder probe the same deformation under periodic and open boundaries.
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All authors Jiaxuan Guo, Simin Nie, Xiting Zhang, Fritz B. Prinz
Mesoscale and Nanoscale Physics
Chirality-Selective Phonon Pumping by Ferroelectric Dynamics
Dapeng Yao and Ping Tang
The discovery of chiral
phonons has expanded the conventional view of
lattice vibrations as passive heat carriers, opening new opportunities for phononic spintronic devices. However, their realization has been largely limited to chiral
crystals or to specific regions of momentum space in certain achiral materials. Here, we propose a generic mechanism for generating propagating chiral
phonons in an ordinary dielectric through the precession of the electric polarization in an adjacent ferroelectric. The polarization dynamics transfers its intrinsic angular momentum to the
lattice via electrostrictive coupling, thereby pumping chirality-selective
phonons whose handedness is dictated by that of the polarization precession. For a typical LiNbO$_{3}$$|$Y$_{3}$Al$_{5}$O$_{12}$ bilayer, we find that the pumping efficiency quantified by an interfacial convertance substantially exceeds those of thermally induced chiral-
phonon generation in chiral
crystals, owing to the strong electrostrictive coupling in ferroelectrics. Our work establishes ferroelectric dynamics as a versatile electrical source of chiral
phonons and provides a general route toward electrically programmable chiral-phononic and spintronic functionalities.
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Mesoscale and Nanoscale Physics · Cross-listed from quant-ph
The temperature-dependent non-Abelian gauge potential
Zheng-Chuan Wang
This study shows that the usual time
evolution operator can act as a U(1) gauge transformation on the initial wavefuntion. When considering the
spin freedom in the system, the time
evolution operator corresponds to a non-Abelian SU(2) gauge transformation for
spin-1/2 particles and a SU(3) gauge transformation for
spin-1 particles. If we adopt the adiabatic approximation in the magnetization dynamics of a ferromagnetic system driven by a
spin-polarized current, a temperature-dependent non-Abelian thermal gauge potential will appear. We can employ a temperature-dependent Landau-Lifshitz-Gilbert (LLG) equation to describe the magnetization dynamics in the semi-classical limit, a linear approximated solution for this equation is given analytically.
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Mesoscale and Nanoscale Physics
Non-Hermitian topological Euler insulators
Longwen Zhou
Topological Euler
insulators emerge in multiband systems with real Bloch
Hamiltonians and wavefunctions. Their fragile
topologies are characterized by the Euler class of degenerate bands and protected by the $PT$ or $C_2T$
symmetry in two dimensions, which go beyond the tenfold $K$-theory classification of topological matter. In this work, we extend the conception of topological Euler
insulators to non-Hermitian systems and propose a theoretical framework to unlock their nontrivial Euler
topology. Focusing on two-dimensional, three-band non-Hermitian
lattice models with symmetric
Hamiltonians, we formulate a comprehensive description of their topological Euler bands,
entanglement spectrum and bulk-boundary correspondence. Three typical models of non-Hermitian Euler
insulators are constructed and investigated explicitly to illustrate our theory. Unique topological phase transitions and anomalous edge-band overlaps with non-Hermitian origins are further identified. Our study establishes the presence of topological Euler bands in non-Hermitian systems and unveils their intriguing physical characteristics, thereby broadening the existing territory of topological matter in non-Hermitian open systems.
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Mesoscale and Nanoscale Physics · Cross-listed from cond-mat.quant-gas
Dynamical development of long-range spatial coherence in non-equilibrium bosonic condensation
Bianca Rae Fabricante, Dąbrówka Biegańska, Paolo Comaron et al. (+14 more)
Development of spontaneous coherence is one of the hallmarks of bosonic condensation in a variety of physical systems, such as cold atoms, confined
photons, and hybrid light-matter quasiparticles like
exciton polaritons in
semiconductors. While spatial coherence is well understood once a steady-state condensate has been established, its temporal
evolution as the condensate forms is largely unexplored. Here, we explore the dynamical formation of a non-
equilibrium, driven-dissipative
exciton-polariton condensate through both time-resolved experiments and numerical modeling. Our study reveals that the spatial coherence is established through two distinct stages. The early-time stage is interaction-driven and features transient oscillations in spatial coherence. This stage is followed by a steady-state regime characterized by a spatially-uniform high degree of coherence that extends over the entire size of the system and persists over time. These stages of spatial coherence development occur in both free flowing and confined
exciton-polariton systems that undergo a quench - rapid growth of the condensate starting from two different initial settings. Our study offers a deep insight into the process by which long-range spatial coherence is established in a non-
equilibrium bosonic condensate.
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All authors Bianca Rae Fabricante, Dąbrówka Biegańska, Paolo Comaron, Mateusz Król, Matthias Wurdack, Maciej Pieczarka, Mark Steger, David W. Snoke, Kenneth West, Daniele Sanvitto, Dario Ballarini, Dimitrios Trypogeorgos, Loren N. Pfeiffer, Andrew G. Truscott, Marzena Szymańska, Elena A. Ostrovskaya, Eliezer Estrecho
Mesoscale and Nanoscale Physics
Quantum geometric signatures of Link-Unlink transitions and nonlinear Hall response in Hopf-link semimetals
Kamalesh Bera, Arijit Saha and Debashree Chowdhury
Quantum geometry, comprising of
quantum metric and Berry
curvature, plays a significant role in the electronic transport properties of solids. In this work, we theoretically investigate the
quantum geometric properties of a Hopf-link semimetal, a distinct topological class that is charecterized by a nodal link-unlink transition. We compute the interband optical conductivity of the Hopf link, which effectively distinguishes between linked and trivial phases. While recent studies establish
quantum metric dipole-mediated scattering-free nonlinear Hall effect, this effect becomes even more fascinating in systems where the Berry-
curvature-dipole contribution to nonlinear Hall conductivity vanishes. Owing to the underlying $PT$
symmetry of the Hopf-link semimetal, the Berry
curvature and its corresponding contribution to the nonlinear Hall effect are entirely suppressed. Consequently, by introducing an appropriate perturbation, a finite nonlinear Hall conductivity emerges solely due to the
quantum metric in the Hopf semimetal. Notably, this purely intrinsic,
symmetry-driven nonlinear response remains entirely unmixed with extrinsic components.
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Mesoscale and Nanoscale Physics
Metastable magnetic domains and the anomalous $B_\parallel=0$ resistance peak in twisted double bilayer graphene
Zhenxiang Gao, Christopher Coleman, Silvia Lüscher et al. (+7 more)
In
graphene moirés, valley polarization gives rise to orbital magnetism, manifested as an anomalous Hall effect and resulting in Barkhausen jumps in longitudinal resistance when changing domain configurations modify quasiparticle scattering. Beyond a simple picture of polarized domains, however,
spin and valley textures within and between the domains are less well understood, as is the effect of these textures on transport. In the valley-polarized quarter-metal state of twisted double bilayer
graphene, a sharp and metastable peak in longitudinal resistance often appears at zero in-plane
magnetic field, whose microscopic origin has yet to be identified. Here, we show that this peak depends on the configuration of domains of orbital magnetism, which is itself set by the gate-voltage trajectory used to enter the ordered state and by the
magnetic field — particularly the in-plane component — present during that trajectory. The sensitivity of the effect to in-plane
magnetic field components points to
spin, linked to valley polarization through
spin-orbit coupling, as the key degree of freedom in both the domain formation and the resistance peak.
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All authors Zhenxiang Gao, Christopher Coleman, Silvia Lüscher, Ruiheng Su, Manabendra Kuiri, Kenji Watanabe, Takashi Taniguchi, Nemin Wei, Chunli Huang, Joshua Folk
Mesoscale and Nanoscale Physics
Signatures of a ferro-Josephson effect in twisted graphene
Ruiheng Su, Zhenxiang Gao, Christopher Coleman et al. (+9 more)
When a
spin-polarized current is driven across a
magnetic domain wall, the resulting
spin-transfer torque may, beyond a critical threshold, set the wall's moments into precession. This precession modulates the Berry
curvature experienced by electrons traversing the wall, producing an electromotive force that is topological in nature and proportional to the precession frequency, mapping precisely onto the DC Josephson effect and leading to the name ferro-Josephson effect. We report signatures consistent with this effect in a twisted
graphene van der Waals
heterostructure, where
spin and valley textures are linked by exchange, Hund's coupling, and
spin-orbit interactions. Tuned to fillings where the isospin degeneracy is spontaneously broken, the samples develop a sharp peak in the longitudinal resistance within a fraction of a millitesla of $B_\parallel=0$—a peak that disappears as the current is reduced toward zero. In differential resistance the feature resolves into sharp resonances that disperse with $B_\parallel$ on microtesla and picoampere scales. We argue that these arise from the current-driven precession of
spin-domain-wall moments, in competition with the in-plane anisotropy set by a minuscule applied field, and that they establish nonlinear transport as a sensitive probe of isospin domain-wall dynamics at energy scales far below $k_BT$.
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All authors Ruiheng Su, Zhenxiang Gao, Christopher Coleman, Manabendra Kuiri, Dacen Waters, Kenji Watanabe, Takashi Taniguchi, Matthew Yankowitz, Nemin Wei, Chunli Huang, Allan H. MacDonald, Joshua Folk